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11. 发明申请

US20050211378A1 Filter, substrate treatment apparatus and substrate treatment method 审中-公开
标题翻译：过滤器，基板处理装置及基板处理方法
公开(公告)号：US20050211378A1
公开(公告)日：2005-09-29
申请号：US11076231
申请日：2005-03-10
申请人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
发明人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
IPC分类号： H01L21/306 , C23F1/00 , H01L21/00 , H01L21/311
CPC分类号： H01L21/67086 , H01L21/30604 , H01L21/31111
摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.
摘要翻译：一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括：化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。

12. 发明授权

US08435903B2 Semiconductor substrate surface treatment method 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US08435903B2
公开(公告)日：2013-05-07
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

13. 发明申请

US20110269313A1 SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US20110269313A1
公开(公告)日：2011-11-03
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/3065
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

14. 发明申请

US20110143545A1 APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：US20110143545A1
公开(公告)日：2011-06-16
申请号：US12879097
申请日：2010-09-10
申请人： Hisashi OKUCHI , Tatsuhiko Koide , Shinsuke Kimura , Yoshihiro Ogawa , Hiroshi Tomita
发明人： Hisashi OKUCHI , Tatsuhiko Koide , Shinsuke Kimura , Yoshihiro Ogawa , Hiroshi Tomita
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/67051
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.
摘要翻译：在一个实施例中，处理半导体衬底的表面的设备包括：衬底保持和旋转单元，其保持具有形成在其上的凸起图案的表面的半导体衬底，并使半导体衬底旋转，提供化学品的第一供应单元和 /或纯水，以及第二供给单元，其向半导体基板的表面供给稀释斥水剂，以在凸形图案的表面上形成防水保护膜。第二供应单元包括缓冲罐，其存储防水剂，向缓冲罐供应净化气体的第一供应管线，供应稀释剂的第二供应管线，在缓冲罐内排出拒水剂的泵，供给从泵送出的防水剂的第三供给管路和将稀释剂与防水剂混合而制成稀释斥水剂的混合阀。

15. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

16. 发明授权

US6059887A Process for cleaning the interior of semiconductor substrate 失效
标题翻译：清洗半导体衬底内部的工艺
公开(公告)号：US6059887A
公开(公告)日：2000-05-09
申请号：US54511
申请日：1998-04-03
申请人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
发明人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
IPC分类号： H01L21/304 , H01L21/322 , C03C23/00
CPC分类号： H01L21/3221
摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.
摘要翻译：提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

17. 发明授权

US06679950B2 Cleaning method and cleaner 失效
标题翻译：清洁方法和清洁剂
公开(公告)号：US06679950B2
公开(公告)日：2004-01-20
申请号：US09892742
申请日：2001-06-28
申请人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
发明人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
IPC分类号： B08B300
CPC分类号： H01L21/67046 , B01F3/04099 , B01F3/0446 , B01F5/0476 , B01F2003/0439 , B01F2003/04886 , B01F2201/01 , B08B1/00 , B08B1/04 , B08B3/02 , Y10S134/902
摘要： A substrate cleaning method of the present invention enables effective cleaning of a wafer having a recess therein without causing any increase in cleaning costs. Ozone gas and ammonia water are supplied to an area right above a wafer 7 having a recess therein, and a gas-dissolving liquid is produced by dissolving the ozone gas in the ammonia water. The gas-dissolving liquid is used to carry out contact and non-contact types of physical cleaning on the wafer.
摘要翻译：本发明的基板清洗方法能够有效地清洗其中具有凹槽的晶片，而不会导致清洁成本的任何增加。将臭氧气体和氨水供给到其中具有凹部的晶片7的正上方的区域，并且通过将臭氧气体溶解在氨水中来制造气体溶解液。气溶液用于在晶片上进行接触和非接触式的物理清洁。

18. 发明授权

US06645876B2 Etching for manufacture of semiconductor devices 有权
公开(公告)号：US06645876B2
公开(公告)日：2003-11-11
申请号：US10014609
申请日：2001-12-14
申请人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
发明人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/3081 , H01L21/31111 , H01L21/67086
摘要： A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

19. 发明授权

US06639317B2 Semiconductor device in trench 失效
标题翻译：沟槽中的半导体器件
公开(公告)号：US06639317B2
公开(公告)日：2003-10-28
申请号：US10188871
申请日：2002-07-05
申请人： Hiroshi Tomita , Soichi Nadahara
发明人： Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L23528
CPC分类号： H01L21/32134 , H01L21/67075 , H01L28/65
摘要： In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.
摘要翻译：在蚀刻方法中，将含有氧化还原电位为2V以上的氧化剂的臭氧水供给到诸如SrRuO膜等的金属化合物膜上，并且通过涉及氧的氧化还原反应蚀刻金属化合物膜。通过物理去除方法通常去除的金属化合物膜可以通过湿蚀刻容易地除去。因此，容易制造含有SrRuO膜的电容器等。

20. 发明授权

US06431185B1 Apparatus and method for cleaning a semiconductor substrate 失效
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US06431185B1
公开(公告)日：2002-08-13
申请号：US09401864
申请日：1999-09-22
申请人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B600
CPC分类号： H01L21/67051 , B08B3/02 , B08B2203/0288 , Y10S134/902
摘要： There is proposed an apparatus and method for cleaning a semiconductor substrate, which make it possible to minimize the adhesion of mist in a cleaning tank at the occasion of cleaning a semiconductor substrate, to realize a high removal effect of residual polishing particles, and to enable to obtain a clean surface. In view of preventing a mist generated by the jet of high pressure water from re-adhering to the substrate during the cleaning of a semiconductor substrate, a cover member is disposed at a mist-generating region so as to prevent the splash of the mist. Additionally, a cavity is caused to generate by contacting a high pressure water with a still water, and high-frequency generated by the generation of the cavity is utilized for removing the residual polishing particles. Alternatively, the ejection of high pressure water against the surface of the substrate is performed in a liquid phase such as ultrapure water, thereby preventing the generation of mist.
摘要翻译：提出了一种用于清洁半导体衬底的装置和方法，这使得可以在清洁半导体衬底的情况下最小化清洗槽中的雾的粘附性，以实现残留的抛光颗粒的高的去除效果，并且使得能够以获得干净的表面。考虑到在清洁半导体衬底期间防止高压水射流产生的雾再次粘附到衬底上，在雾化产生区域处设置一个盖构件，以防止雾沫的飞溅。此外，通过使高压水与静止水接触而产生空腔，并且通过产生空腔产生的高频被用于去除残留的抛光颗粒。或者，将高压水喷射到基板的表面，以超纯水等液相进行，从而防止产生雾。

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