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11. 发明申请

US20070051622A1 Simultaneous ion milling and sputter deposition 审中-公开
标题翻译：同时离子研磨和溅射沉积
公开(公告)号：US20070051622A1
公开(公告)日：2007-03-08
申请号：US11218403
申请日：2005-09-02
申请人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
发明人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , C23C14/3442 , C23C14/345 , H01J37/3056 , H01J37/3408
摘要： A magnetron sputter reactor including an ion beam source producing a linear beam that strikes the wafer center at an angle of less than 35°. The linear beam extends across the wafer perpendicular to the beam but has a much short dimension along the beam propagation axis while the wafer is being rotated. The ion source may be an anode layer source having a plasma loop between an inner magnetic pole and a surrounding outer magnetic pole with anode overlying the loop with a closed-loop aperture. The beams from the opposed sides of the loop are steered together by making the outer pole stronger than the inner pole. The aperture width may be varied to control the emission intensity.
摘要翻译：包括离子束源的磁控溅射反应器，产生以小于35°的角度撞击晶片中心的线性光束。线性光束垂直于光束延伸穿过晶片，但是当晶片正在旋转时沿着光束传播轴线具有很短的尺寸。离子源可以是在内部磁极和周围的外部磁极之间具有等离子体环的阳极层源，阳极覆盖具有闭环孔径的环路。通过使外极比内极更强，从环的相对侧的梁被转向一起。可以改变孔径宽度以控制发射强度。

12. 发明申请

US20100075494A1 INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION 有权
标题翻译：用于铜冶金的ALD钽酸盐的整合
公开(公告)号：US20100075494A1
公开(公告)日：2010-03-25
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

13. 发明申请

US20060030151A1 Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
标题翻译：金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进
公开(公告)号：US20060030151A1
公开(公告)日：2006-02-09
申请号：US10915139
申请日：2004-08-09
申请人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
发明人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.
摘要翻译：一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

14. 发明申请

US20050106865A1 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US20050106865A1
公开(公告)日：2005-05-19
申请号：US10865042
申请日：2004-06-10
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

15. 发明授权

US06365514B1 Two chamber metal reflow process 失效
标题翻译：二室金属回流工艺
公开(公告)号：US06365514B1
公开(公告)日：2002-04-02
申请号：US08997044
申请日：1997-12-23
申请人： Jick Yu , Ruth Brain
发明人： Jick Yu , Ruth Brain
IPC分类号： H01L2144
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： The present invention describes an improved process for forming an aluminum or aluminum alloy plug in the fabrication of a semiconductor device. An opening is formed in a wafer. A titanium wetting layer is then deposited over the wafer and lines the sidewalls and bottom of the opening. A first aluminum deposition step is performed at a first power in a hot deposition chamber. A second aluminum deposition step is performed at a second higher power in a cold deposition chamber. The present invention forms the aluminum plug without the problems of void formation and without reaching temperatures that could cause damage to underlying layers during the fabrication process.
摘要翻译：本发明描述了在制造半导体器件时形成铝或铝合金插头的改进方法。在晶片中形成开口。然后将钛润湿层沉积在晶片上并对开口的侧壁和底部进行排列。在热沉积室中以第一功率进行第一铝沉积步骤。在冷沉积室中以第二较高功率执行第二铝沉积步骤。本发明形成铝塞，而没有空隙形成的问题，并且没有达到在制造过程中可能导致对下层的损坏的温度。

16. 发明授权

US07494908B2 Apparatus for integration of barrier layer and seed layer 有权
标题翻译：用于整合势垒层和种子层的装置
公开(公告)号：US07494908B2
公开(公告)日：2009-02-24
申请号：US11749064
申请日：2007-05-15
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L21/3205
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

17. 发明申请

US20060199372A1 Reduction of copper dewetting by transition metal deposition 有权
标题翻译：通过过渡金属沉积减少铜的去湿
公开(公告)号：US20060199372A1
公开(公告)日：2006-09-07
申请号：US11069514
申请日：2005-03-01
申请人： Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick Yu
发明人： Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick Yu
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/28556 , H01L21/76868 , H01L21/76873 , H01L2221/1089
摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.
摘要翻译：一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

18. 发明授权

US06936906B2 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US06936906B2
公开(公告)日：2005-08-30
申请号：US09965373
申请日：2001-09-26
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C14/34 , C23C16/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/58 , H01L27/095
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施例中，种子层包括沉积在阻挡层上的铜合金晶种层和沉积在铜合金晶种层上的第二晶种层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

19. 发明授权

US07352048B2 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US07352048B2
公开(公告)日：2008-04-01
申请号：US11064274
申请日：2005-02-22
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L29/00
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

20. 发明申请

US20050139948A1 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US20050139948A1
公开(公告)日：2005-06-30
申请号：US11064274
申请日：2005-02-22
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C14/34 , C23C16/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/58 , H01L27/095
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

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