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1. 发明申请

US20100075494A1 INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION 有权
标题翻译：用于铜冶金的ALD钽酸盐的整合
公开(公告)号：US20100075494A1
公开(公告)日：2010-03-25
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

2. 发明授权

US08324095B2 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US08324095B2
公开(公告)日：2012-12-04
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

3. 发明授权

US07049226B2 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US07049226B2
公开(公告)日：2006-05-23
申请号：US10865042
申请日：2004-06-10
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

4. 发明授权

US06693030B1 Reactive preclean prior to metallization for sub-quarter micron application 失效
标题翻译：金属化之前的反应性预清洗用于二分之一微米的应用
公开(公告)号：US06693030B1
公开(公告)日：2004-02-17
申请号：US09617522
申请日：2000-07-14
申请人： Suchitra Subrahmanyan , Liang-Yuh Chen , Roderick Craig Mosely
发明人： Suchitra Subrahmanyan , Liang-Yuh Chen , Roderick Craig Mosely
IPC分类号： H01L214763
CPC分类号： C23C16/0236 , C23C14/022 , H01L21/02063 , H01L21/76814 , H01L21/76843 , H01L21/76861 , Y10S438/906
摘要： The present invention generally provides a precleaning process prior to moralization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available moralization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and moralization steps can be conducted on available integrated processing platforms.
摘要翻译：本发明通常提供在衬底上的亚微米特征的道德化之前的预清洗过程。该方法包括用来自诸如氧的反应性气体的等离子体，CF 4 / O 2或He / NF 3的混合物的混合物的自由基清洗亚微米特征，其中等离子体优选由远程等离子体源产生，并且基团是输送到其中设置基板的室。残留在亚微米特征中的天然氧化物优选通过用含有氢的等离子体进行处理而在第二步骤中还原。在第一个或两个预清洗步骤之后，特征可以通过可用的道德化技术用金属填充，其通常包括在沉积铝，铜或钨之前在暴露的电介质表面上沉积阻挡层/衬垫层。预处理和道德化步骤可以在现有的综合处理平台上进行。

5. 发明授权

US06169030A Metallization process and method 失效
标题翻译：金属化过程和方法
公开(公告)号：US06169030A
公开(公告)日：2001-01-02
申请号：US09007233
申请日：1998-01-14
申请人： Mehul B. Naik , Ted Guo , Liang-Yuh Chen , Roderick Craig Mosely , Israel Beinglass
发明人： Mehul B. Naik , Ted Guo , Liang-Yuh Chen , Roderick Craig Mosely , Israel Beinglass
IPC分类号： H01L2144
CPC分类号： C23C14/32 , C23C14/025 , C23C14/046 , H01L21/2855 , H01L21/76877
摘要： The invention generally provides an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free interconnections in high aspect ratio, sub-half micron applications. The invention provides a multi-step PVD process in which the plasma power is varied for each of the steps to obtain favorable fill characteristics as well as good reflectivity, morphology and throughput. The initial plasma powers are relatively low to ensure good, void-free filling of the aperture and, then, the plasma powers are increased to obtain the desired reflectivity and morphology characteristics. The invention provides an aperture filling process comprising physical vapor depositing a metal over the substrate and varying the plasma power during the physical vapor deposition. Preferably, the plasma power is varied from a first discrete low plasma power to a second discrete high plasma power. Even more preferably, the plasma power is varied from a first discrete low plasma power to a second discrete low plasma power to a third discrete high plasma power.
摘要翻译：本发明通常提供了一种改进的方法，用于在衬底上提供均匀的台阶覆盖和金属层的平坦化，以在高纵横比，半微米应用中形成连续的无空隙互连。本发明提供了一种多步骤PVD工艺，其中等离子体功率对于每个步骤而言是变化的，以获得良好的填充特性以及良好的反射率，形态和产量。初始等离子体功率相对较低，以确保孔的良好的无空隙填充，然后增加等离子体功率以获得期望的反射率和形态特征。本发明提供一种孔填充方法，其包括在物理气相沉积中物理气相沉积衬底上的金属并改变等离子体功率。优选地，等离子体功率从第一离散低等离子体功率变化到第二离散高等离子体功率。更优选地，等离子体功率从第一离散低等离子体功率变化到第二离散低等离子体功率到第三离散高等离子体功率。

6. 发明授权

US06430458B1 Semi-selective chemical vapor deposition 失效
标题翻译：半选择性化学气相沉积
公开(公告)号：US06430458B1
公开(公告)日：2002-08-06
申请号：US09371617
申请日：1999-08-10
申请人： Roderick Craig Mosely , Liang-Yuh Chen , Ted Guo
发明人： Roderick Craig Mosely , Liang-Yuh Chen , Ted Guo
IPC分类号： B05D114
CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089 , Y10S977/891
摘要： The present invention is an apparatus and method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal is then deposited onto the substrate and grows selectively in the contact hole or via where a barrier layer serves as a nucleation layer. The process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.
摘要翻译：本发明是一种用于通过化学气相沉积在衬底上半选择性沉积材料以在半微米应用中形成连续的无空隙接触孔或通孔的装置和方法。绝缘层优先沉积在衬底的场上以延迟或抑制场上金属的成核。然后将CVD金属沉积到衬底上并选择性地生长在接触孔中，或通过其中阻挡层用作成核层。该方法优选在包括PVD和CVD处理室的多室系统中进行，使得一旦将基底引入真空环境中，接触孔和通孔的填充发生，而在图案上没有形成氧化物层基质。

7. 发明授权

US06297147B1 Plasma treatment for ex-situ contact fill 失效
标题翻译：等离子体处理用于非原位接触填充
公开(公告)号：US06297147B1
公开(公告)日：2001-10-02
申请号：US09092811
申请日：1998-06-05
申请人： Lisa Yang , Anish Tolia , Roderick Craig Mosely
发明人： Lisa Yang , Anish Tolia , Roderick Craig Mosely
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , C23C14/024 , C23C16/0272 , H01L21/76843 , H01L21/76862 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present invention provides a method and apparatus for filling contacts, vias, trenches, and other patterns, in a substrate surface, particularly patterns having high aspect ratios. Generally, the present invention provides a method for removing oxygen from the surface of an oxidized metal layer prior to deposition of a subsequent metal. The oxidized metal is treated with a plasma consisting of nitrogen, hydrogen, or a mixture thereof. In one aspect of the invention, the metal layer is Ti, TiN, Ta, TaN, Ni, NiV, or V, and a subsequent wetting layer is deposited using either CVD techniques or electroplating, such as CVD aluminum (Al) or electroplating of copper (Cu). The metal layer can be exposed to oxygen or the atmosphere and then treated with a plasma of nitrogen and/or hydrogen in two or more cycles to remove or reduce oxidation of the surface of the metal layer and nucleate the growth of a subsequent metal layer thereon.
摘要翻译：本发明提供一种用于在衬底表面中填充触点，通孔，沟槽和其它图案的方法和装置，特别是具有高纵横比的图案。通常，本发明提供了在沉积后续金属之前从氧化金属层的表面除去氧的方法。用由氮，氢或其混合物组成的等离子体处理氧化金属。在本发明的一个方面，金属层是Ti，TiN，Ta，TaN，Ni，NiV或V，并且随后的润湿层使用CVD技术或电镀，例如CVD铝（Al）或电镀铜（Cu）。金属层可以暴露于氧气或大气中，然后在两个或更多个循环中用氮和/或氢气等离子体处理以去除或减少金属层表面的氧化并使其后续金属层的生长成核。

8. 发明授权

US06743714B2 Low temperature integrated metallization process and apparatus 失效
公开(公告)号：US06743714B2
公开(公告)日：2004-06-01
申请号：US10074938
申请日：2002-02-11
申请人： Roderick Craig Mosely , Hong Zhang , Fusen Chen , Ted Guo , Liang-Yuh Chen
发明人： Roderick Craig Mosely , Hong Zhang , Fusen Chen , Ted Guo , Liang-Yuh Chen
IPC分类号： H01L2144
CPC分类号： H01L21/76876 , C23C14/568 , C23C16/54 , H01L21/32051 , H01L21/76843 , H01L21/76877 , H01L21/76879
摘要： The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.

9. 发明授权

US6080665A Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum 失效
标题翻译：集成的氮处理钛层，以防止钛和铝的相互作用
公开(公告)号：US6080665A
公开(公告)日：2000-06-27
申请号：US840209
申请日：1997-04-11
申请人： Liang-Yuh Chen , Ted Guo , Roderick Craig Mosely
发明人： Liang-Yuh Chen , Ted Guo , Roderick Craig Mosely
IPC分类号： H01L21/28 , C23C14/14 , C23C14/58 , C23C16/06 , C23C16/56 , H01L21/203 , H01L21/3205 , H01L21/768 , H01L21/44
CPC分类号： C23C14/5826 , C23C14/14 , C23C14/586 , C23C16/06 , C23C16/56 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： The present invention generally provides a method for processing a substrate having exposed surfaces of titanium and/or silicon prior to deposition of aluminum. The substrate is positioned adjacent a process zone which provides a nitrogen plasma so that exposed areas of titanium and silicon on the substrate are stuffed with nitrogen to form titanium nitride (TiN) and various compounds of silicon and nitrogen (Si.sub.x N.sub.y), respectively. The nitrogen treated surfaces, i.e, TiN and silicon/nitrogen compounds, are resistant to interaction with aluminum. In this manner, the formation of electrically insulating TiAl.sub.3 and/or the spiking of silicon is reduced or eliminated.
摘要翻译：本发明通常提供一种在沉积铝之前处理具有钛和/或硅的暴露表面的衬底的方法。衬底位于提供氮等离子体的工艺区域附近，使得衬底上的钛和硅的暴露区域填充氮气，以分别形成氮化钛（TiN）和各种硅和氮化合物（SixNy）。氮处理的表面即TiN和硅/氮化合物对铝的相互作用具有抗性。以这种方式，减少或消除了电绝缘TiAl 3的形成和/或硅的尖峰。

10. 发明授权

US6017144A Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer 失效
标题翻译：使用低温播种层沉积高取向和反射晶体层的方法和装置
公开(公告)号：US6017144A
公开(公告)日：2000-01-25
申请号：US736629
申请日：1996-10-24
申请人： Ted Tie Guo , Mehul Bhagubhai Naik , Liang-Yu Chen , Roderick Craig Mosely , Israel Beinglass
发明人： Ted Tie Guo , Mehul Bhagubhai Naik , Liang-Yu Chen , Roderick Craig Mosely , Israel Beinglass
IPC分类号： C23C14/56 , C23C16/02 , C23C16/20 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , G06F17/00 , G07F15/02
CPC分类号： C23C14/568 , C23C16/0281 , C23C16/20 , C23C16/54 , H01L21/32051 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L2221/1089
摘要： The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T.sub.s, within a first lower range of temperatures .DELTA. T.sub.s, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T.sub.d, within a second higher range of temperatures .DELTA. T.sub.D, and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.
摘要翻译：本发明涉及一种用于在基片上沉积基本平面的高反射层的化学气相沉积工艺，特别适用于用含金属的材料填充衬底中的高纵横比孔。将衬底放置在工艺区中，并在衬底上进行连续接种和取向晶体生长阶段。在播种阶段，将衬底加热到第一较低温度范围DELTA Ts内的温度Ts，并将接种气体引入工艺区。接种气体在衬底上沉积基本上连续的，非粒状的和平面的接种层。此后，在取向晶体生长阶段中，将衬底保持在沉积温度Td，在第二较高温度范围DELTA TD内，并将沉积气体引入工艺区。沉积气体在接种层上形成取向的晶体生长层，取向晶体生长层具有由在取向层上生长的高定向，相对较大的晶体产生的高反射性表面。

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