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1. 发明授权

US07494908B2 Apparatus for integration of barrier layer and seed layer 有权
标题翻译：用于整合势垒层和种子层的装置
公开(公告)号：US07494908B2
公开(公告)日：2009-02-24
申请号：US11749064
申请日：2007-05-15
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L21/3205
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

2. 发明授权

US06936906B2 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US06936906B2
公开(公告)日：2005-08-30
申请号：US09965373
申请日：2001-09-26
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C14/34 , C23C16/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/58 , H01L27/095
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施例中，种子层包括沉积在阻挡层上的铜合金晶种层和沉积在铜合金晶种层上的第二晶种层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

3. 发明授权

US07352048B2 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US07352048B2
公开(公告)日：2008-04-01
申请号：US11064274
申请日：2005-02-22
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L29/00
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

4. 发明申请

US20050139948A1 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US20050139948A1
公开(公告)日：2005-06-30
申请号：US11064274
申请日：2005-02-22
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C14/34 , C23C16/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/58 , H01L27/095
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

5. 发明申请

US20070283886A1 APPARATUS FOR INTEGRATION OF BARRIER LAYER AND SEED LAYER 有权
标题翻译：用于整合障碍层和种植层的装置
公开(公告)号：US20070283886A1
公开(公告)日：2007-12-13
申请号：US11749064
申请日：2007-05-15
申请人： HUA CHUNG , Ling Chen , Jick Yu , Mei Chang
发明人： HUA CHUNG , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C16/00
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

6. 发明申请

US20100075494A1 INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION 有权
标题翻译：用于铜冶金的ALD钽酸盐的整合
公开(公告)号：US20100075494A1
公开(公告)日：2010-03-25
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

7. 发明申请

US20050106865A1 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US20050106865A1
公开(公告)日：2005-05-19
申请号：US10865042
申请日：2004-06-10
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

8. 发明授权

US08324095B2 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US08324095B2
公开(公告)日：2012-12-04
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

9. 发明申请

US20060148253A1 Integration of ALD tantalum nitride for copper metallization 审中-公开
公开(公告)号：US20060148253A1
公开(公告)日：2006-07-06
申请号：US11368191
申请日：2006-03-03
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
IPC分类号： H01L21/44 , H01L21/461
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

10. 发明授权

US07049226B2 Integration of ALD tantalum nitride for copper metallization 有权
标题翻译： ALD氮化钽的集成用于铜金属化
公开(公告)号：US07049226B2
公开(公告)日：2006-05-23
申请号：US10865042
申请日：2004-06-10
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

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