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    • 13. 发明授权
    • Plasma pinch high energy with debris collector
    • 等离子体夹杂高能量与碎片收集器
    • US06541786B1
    • 2003-04-01
    • US09324526
    • 1999-06-02
    • William N. PartloIgor V. FomenkovDaniel L. Birx
    • William N. PartloIgor V. FomenkovDaniel L. Birx
    • G21G400
    • H05G2/003B82Y10/00G03F7/70033G03F7/70166G03F7/70916H05G2/005H05H1/06
    • A high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. A working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at voltages high enough to create electrical discharge between the electrodes to produce very high temperature, high density plasma pinch in the working gas providing radiation at the spectral line of the active gas. An external reflection radiation collector-director collects radiation produced in the plasma pinches and directs the radiation in a desired direction. In a preferred embodiment the active gas is lithium and the buffer gas is helium and the radiation collector-director is coated with the material used for the electrodes. A good choice for the material is tungsten. In a second preferred embodiment the buffer gas is argon and lithium gas is produced by vaporization of solid or liquid lithium located in a hole along the axis of the central electrode of a coaxial electrode configuration. Other preferred embodiments utilize a conical nested debris collector upstream of the radiation collector-director.
    • 高能光子源。 一对等离子体夹紧电极位于真空室中。 一种工作气体,其包括贵金属缓冲气体和选择用于提供所需光谱线的活性气体。 脉冲电源提供电压足够高的电脉冲以在电极之间产生电放电,以在工作气体中产生非常高温,高密度的等离子体夹紧,从而在活性气体的谱线处提供辐射。 外部反射辐射收集器 - 导向器收集在等离子体夹中产生的辐射,并将辐射引导到期望的方向。 在一个优选的实施方式中,活性气体是锂,缓冲气体是氦气,并且辐射收集器导向器涂覆有用于电极的材料。 材料的一个不错的选择是钨。 在第二优选实施例中,缓冲气体是氩气,并且通过沿着同轴电极配置的中心电极的轴的孔中的固体或液体锂的汽化来产生锂气体。 其他优选实施例利用在辐射收集器 - 导向器上游的锥形嵌套碎片收集器。
    • 16. 发明授权
    • Gas discharge laser line narrowing module
    • 气体放电激光线变窄模块
    • US08379687B2
    • 2013-02-19
    • US11173955
    • 2005-06-30
    • Raymond F. CybulskiRobert A. BergstedtWilliam N. PartloRichard L. SandstromGon Wang
    • Raymond F. CybulskiRobert A. BergstedtWilliam N. PartloRichard L. SandstromGon Wang
    • H01S3/08
    • H01S3/03H01S3/034H01S3/036H01S3/1055H01S3/225
    • A line narrowed gas discharge laser system and method of operating same is disclosed which may comprise a dispersive center wavelength selective element; a beam expander comprising a plurality of refractive elements; a refractive element positioning mechanism positioning at least one of the refractive elements to modify an angle of incidence of a laser light beam on the dispersive center wavelength selection element; each of the dispersive center wavelength selection element and the beam expander being aligned with each other and with a housing containing at least the dispersive center wavelength selection element; a housing positioning mechanism positioning the housing with respect to an optical axis of the gas discharge laser system. The dispersive element may comprise a grating and the beam expander may comprise a plurality of prisms. The housing may contain the dispersive center wavelength selective element and the beam expander. The housing positioning element may comprise a position locking mechanism.
    • 公开了一种窄气体放电激光系统及其操作方法,其可以包括分散中心波长选择元件; 包括多个折射元件的光束扩展器; 折射元件定位机构,其定位折射元件中的至少一个,以改变激光束在分散中心波长选择元件上的入射角; 分散中心波长选择元件和扩束器中的每一个彼此对准并且至少包含分散中心波长选择元件的壳体; 壳体定位机构相对于气体放电激光系统的光轴定位壳体。 色散元件可以包括光栅,并且光束扩展器可以包括多个棱镜。 壳体可以包含分散中心波长选择元件和扩束器。 壳体定位元件可以包括位置锁定机构。
    • 18. 发明授权
    • EUV collector debris management
    • EUV收集器碎片管理
    • US08075732B2
    • 2011-12-13
    • US10979945
    • 2004-11-01
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • C23F1/00
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。