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11. 发明授权

US5048038A Ion-implanted planar-buried-heterostructure diode laser 失效
标题翻译：离子注入平面埋置异质结二极管激光器
公开(公告)号：US5048038A
公开(公告)日：1991-09-10
申请号：US469996
申请日：1990-01-25
申请人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
发明人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/227 , H01S5/2059 , H01S5/2275 , H01S5/3211 , H01S5/3215 , H01S5/3409 , H01S5/3428
摘要： A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
摘要翻译：平面埋置异质结构，分级折射率，分离限制 - 异质结半导体二极管激光器10包括设置在p型组成梯度III-V族包层14和第二组III-V包层14之间的单量子阱或多量子阱有源条纹12。 n型成分分级的III-V族包层16.激光器10包括在p型包层14内的离子注入的n型区域28，并且在n型包层内还包括离子注入的p型区域26 离子注入区域被设置用于限定活性条纹的横向范围。

12. 发明授权

US08971714B2 Photonic circuit 有权
标题翻译：光电路
公开(公告)号：US08971714B2
公开(公告)日：2015-03-03
申请号：US13248412
申请日：2011-09-29
申请人： Gregory A. Vawter , Jeff B. Lilley , Anna M. Tauke Pedretti , Rick C. Jones
发明人： Gregory A. Vawter , Jeff B. Lilley , Anna M. Tauke Pedretti , Rick C. Jones
IPC分类号： H04B10/00 , H04B10/2575
CPC分类号： H04B10/2575
摘要： An integrated or monolithic photonic circuit that modulates RF signals onto optical signals and then performs a channelizing filter function according to the RF content. According to an exemplary embodiment, the photonic circuit is employed in an aircraft system that includes a front end, a photonic circuit, an optical connection, and an electronic module at some distant location in the aircraft. RF signals are received by an antenna in the front end, the RF signals are then modulated onto optical signals by a modulator and a laser, the modulated optical signals are filtered by a filter array according to a channelizing filter function, and the modulated and channelized optical signals are then carried over the optical connection to the electronic module. Other options like a wavelength-tunable laser and corresponding feedback feature, as well as ring filters with integrated semiconductor optical amplifiers (SOAs) are also possible.
摘要翻译：一种集成或单片光子电路，其将RF信号调制到光信号上，然后根据RF内容执行信道化滤波器功能。根据示例性实施例，光子电路用于包括前端，光子电路，光学连接和飞行器中某个远处位置的电子模块的飞行器系统。 RF信号由前端的天线接收，然后通过调制器和激光器将RF信号调制到光信号上，调制的光信号根据信道化滤波器函数被滤波器阵列滤波，调制和信道化光信号然后通过光连接被传送到电子模块。其他选项，如波长可调激光器和相应的反馈特性，以及具有集成半导体光放大器（SOAs）的环形滤波器也是可能的。

13. 发明授权

US08687665B1 Mutually injection locked lasers for enhanced frequency response 有权
标题翻译：相互注入锁定的激光器，用于增强频率响应
公开(公告)号：US08687665B1
公开(公告)日：2014-04-01
申请号：US13233221
申请日：2011-09-15
申请人： Anna Tauke-Pedretti , Erik J. Skogen , Gregory A. Vawter , Weng W. Chow
发明人： Anna Tauke-Pedretti , Erik J. Skogen , Gregory A. Vawter , Weng W. Chow
IPC分类号： H01S3/082 , H01S5/00
CPC分类号： H01S5/06256 , H01S5/0265 , H01S5/0425 , H01S5/1021 , H01S5/22 , H01S5/4006
摘要： Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.
摘要翻译：半导体发光器件; 提供形成半导体发光器件的方法以及半导体发光器件的操作方法。半导体发光器件包括与公共衬底上的第二激光器部分单片集成的第一激光器部分。每个激光器部分具有相位部分，增益部分和至少一个分布式布拉格反射器（DBR）结构。第一激光部分和第二激光部分被光学耦合以允许它们之间的光学反馈。每个相位部分被配置为相对于彼此独立地调谐第一激光部分和第二激光部分中的相应一个。

14. 发明授权

US06774532B1 Self-powered microthermionic converter 有权
标题翻译：自供电微热转换器
公开(公告)号：US06774532B1
公开(公告)日：2004-08-10
申请号：US10028144
申请日：2001-12-20
申请人： Albert C. Marshall , Donald B. King , Kevin R. Zavadil , Stanley H. Kravitz , Chris P. Tigges , Gregory A. Vawter
发明人： Albert C. Marshall , Donald B. King , Kevin R. Zavadil , Stanley H. Kravitz , Chris P. Tigges , Gregory A. Vawter
IPC分类号： H01L3700
CPC分类号： G21H1/106
摘要： A self-powered microthermionic converter having an internal thermal power source integrated into the microthermionic converter. These converters can have high energy-conversion efficiencies over a range of operating temperatures. Microengineering techniques are used to manufacture the converter. The utilization of an internal thermal power source increases potential for mobility and incorporation into small devices. High energy efficiency is obtained by utilization of micron-scale interelectrode gap spacing. Alpha-particle emitting radioisotopes can be used for the internal thermal power source, such as curium and polonium isotopes.
摘要翻译：一种自供电的微电子转换器，其具有集成在该微热电转换器中的内部热功率源。这些转换器可以在一定范围的工作温度下具有很高的能量转换效率。微型工程技术用于制造转换器。内部热电源的利用增加了移动性的潜力并将其并入小型设备。通过利用微米级电极间隙间隔获得高能效。 α粒子发射放射性同位素可用于内部热电源，如ium和onium同位素。

15. 发明授权

US06365428B1 Embedded high-contrast distributed grating structures 有权
标题翻译：嵌入式高对比度分布式光栅结构
公开(公告)号：US06365428B1
公开(公告)日：2002-04-02
申请号：US09596028
申请日：2000-06-15
申请人： Walter J. Zubrzycki , Gregory A. Vawter , Andrew A. Allerman
发明人： Walter J. Zubrzycki , Gregory A. Vawter , Andrew A. Allerman
IPC分类号： H01L2100
CPC分类号： G02B6/124 , G02B2006/12078 , H01S5/12 , H01S5/1231 , H01S5/125 , Y10S438/962
摘要： A new class of fabrication methods for embedded distributed grating structures is claimed, together with optical devices which include such structures. These new methods are the only known approach to making defect-free high-dielectric contrast grating structures, which are smaller and more efficient than are conventional grating structures.
摘要翻译：要求保护嵌入式分布式光栅结构的新类型的制造方法以及包括这种结构的光学装置。这些新方法是制造无缺陷的高介电对比度光栅结构的唯一已知方法，其比常规光栅结构更小和更有效。

16. 发明授权

US06229947B1 Tapered rib fiber coupler for semiconductor optical devices 失效
标题翻译：用于半导体光器件的锥形肋光纤耦合器
公开(公告)号：US06229947B1
公开(公告)日：2001-05-08
申请号：US08944657
申请日：1997-10-06
申请人： Gregory A. Vawter , Robert Edward Smith
发明人： Gregory A. Vawter , Robert Edward Smith
IPC分类号： G02B610
CPC分类号： G02B6/1228 , G02B6/305 , G02B2006/12097 , G02B2006/12121 , G02B2006/12142 , G02B2006/12176 , G02B2006/12178 , H01S5/1014
摘要： A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.
摘要翻译：一种用于将半导体光学器件和光纤之间的光的光斑尺寸或从光纤转换成光学器件的单片锥形肋波导。锥形肋波导集成在诸如扩展模式光学调制器或扩展模式激光器的截止台面型半导体器件顶部的引导肋中。锥形肋用于迫使导向的光向下进入半导体光学装置的台面结构，而不是与引导肋的底部和截止台面的顶部之间的界面结合。离开或进入台面结构的输出面的单模光可以在1.0 dB或更小的耦合损耗下耦合到光纤。

17. 发明授权

US5102825A Method of making an ion-implanted planar-buried-heterostructure diode laser 失效
标题翻译：制造离子注入平面埋置异质结构二极管激光器的方法
公开(公告)号：US5102825A
公开(公告)日：1992-04-07
申请号：US676486
申请日：1991-03-28
申请人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
发明人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/227 , H01S5/2059 , H01S5/2275 , H01S5/3211 , H01S5/3215 , H01S5/3409 , H01S5/3428 , Y10S148/095
摘要： Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
摘要翻译：平面埋置异质结构，分级折射率，分离约束异质结半导体二极管激光器10包括设置在p型成分分级的III-V族包层杆14和n型组合之间的单量子阱或多量子阱有源条12 型成分分级的III-V族包层16.激光器10包括在p型包层14内的注入n型区域28，并且在n型包覆层内还包括离子注入的p型区域26 设置离子注入区域以限定活性条纹的横向范围。

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