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    • 11. 发明申请
    • OPTICAL DETECTION DEVICE, AND IMAGE DISPLAY DEVICE
    • 光学检测装置和图像显示装置
    • US20100259570A1
    • 2010-10-14
    • US12822511
    • 2010-06-24
    • Toshihiko OmiIsamu FujiiSatoshi MachidaToshiyuki Uchida
    • Toshihiko OmiIsamu FujiiSatoshi MachidaToshiyuki Uchida
    • G09G5/10G01J1/42
    • H01L27/14645G01J1/02G01J1/0488G01J1/18G01J1/4228G01J1/44H01L27/14621H04N5/37457
    • Provided is a photodetection device which is small in size and has excellent sensitivity. A photodetection device puts cathode terminals of photodiodes having different spectral characteristics into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. The photodiodes employ a system of storing electric charges, and hence even if a photocurrent is small, the photocurrent may be stored to obtain the electric charges required for detection, and the downsizing and high detection performance of a semiconductor device that forms the photodiodes may be achieved. Further, a wide dynamic range may be realized with an electric charge storage time being variable according to the light intensity, to intermittently drive an element required for difference detection at the time of difference detection so as to suppress electric power consumption, or to average the output so as to reduce flicker.
    • 提供了一种尺寸小且灵敏度高的光检测装置。 光检测装置将具有不同光谱特性的光电二极管的阴极端子设置为开放状态,并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。 光电二极管使用存储电荷的系统,因此即使光电流小,也可以存储光电流以获得检测所需的电荷,并且形成光电二极管的半导体器件的小型化和高检测性能可以是 实现了 此外,可以通过根据光强度可变的电荷存储时间来实现宽的动态范围,以间歇地驱动差分检测时的差分检测所需要的元件以抑制电力消耗,或者使 输出以减少闪烁。
    • 13. 发明申请
    • Photoelectric Conversion Device and Method of Producing the Same, and Method of Producing Line Image Sensor IC
    • 光电转换装置及其制造方法,以及生产线路图像传感器IC的方法
    • US20090273050A1
    • 2009-11-05
    • US11963560
    • 2007-12-21
    • Toshihiko OmiYoichi Mimuro
    • Toshihiko OmiYoichi Mimuro
    • H01L31/09H01L31/18
    • H01L27/14632H01L27/14636
    • A plurality of line image sensor ICs 110 are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate 101. The gaps between the line image sensor ICs 110 become scribe lines 102X, 102Y. A pattern of dummy interconnects 120 is formed in a region where a short side 110S of an arbitrary line image sensor IC 110 is opposed to a short side 110S of another line image sensor IC 110 adjacent to the arbitrary line image sensor IC 110 in the X direction in a region where the scribe line 102Y is formed. When a material gas is generated by plasma CVD, the material gas is uniformly deposited not only on the line image sensor ICs 110, but also on the dummy interconnects 120. Consequently, a protective film with a uniform thickness can be formed on the line image sensor ICs 110.
    • 多个行图像传感器IC 110形成为在半导体基板101上沿X,Y方向排列间隙。线图像传感器IC 110之间的间隙成为划线102X,102Y。 在任意行图像传感器IC 110的短边110S与X中的任意行图像传感器IC 110相邻的另一行图像传感器IC 110的短边110S相对的区域中形成虚拟互连120的图案 形成划线102Y的区域的方向。 当通过等离子体CVD产生材料气体时,材料气体不仅均匀地沉积在线图像​​传感器IC 110上,而且均匀地沉积在虚拟互连件120上。因此,可以在线图像上形成具有均匀厚度的保护膜 传感器IC 110。
    • 14. 发明授权
    • Hall sensor for eliminating offset voltage
    • 用于消除失调电压的霍尔传感器
    • US08466526B2
    • 2013-06-18
    • US13135299
    • 2011-06-30
    • Takaaki HiokaToshihiko Omi
    • Takaaki HiokaToshihiko Omi
    • H01L29/82H01L43/00H01L23/58
    • H01L43/065G01R33/07
    • A Hall sensor has a P-type semiconductor substrate and a Hall sensing portion having a square shape and an N-type conductivity disposed on a surface of the semiconductor substrate. The Hall sensor includes Hall voltage output terminals having the same shape with each other, and control current input terminals having the same shape with each other. The Hall voltage output terminals are disposed at respective ones of four vertices of the Hall sensing portion. The control current input terminals include pairs of control current input terminals disposed at respective ones of the four vertices of the Hall sensing portion and arranged on both sides of respective ones of the Hall voltage output terminals in spaced apart relation from the Hall voltage output terminals so as to prevent electrical connection between the control current input terminals and the Hall voltage output terminals.
    • 霍尔传感器具有P型半导体基板和设置在半导体基板的表面上的具有正方形和N型导电体的霍尔感测部分。 霍尔传感器包括具有相同形状的霍尔电压输出端子和彼此具有相同形状的控制电流输入端子。 霍尔电压输出端子设置在霍尔感测部分的四个顶点中的相应的一个。 控制电流输入端子包括设置在霍尔感测部分的四个顶点中的各个顶点处的一对控制电流输入端子,并且布置在与霍尔电压输出端子间隔开的相应霍尔电压输出端子的两侧,因此 以防止控制电流输入端子与霍尔电压输出端子之间的电气连接。
    • 15. 发明授权
    • Thermal head driving IC and method of controlling the same
    • 热敏头驱动IC及其控制方法
    • US07868907B2
    • 2011-01-11
    • US12011383
    • 2008-01-24
    • Tadao AkamineToshihiko Omi
    • Tadao AkamineToshihiko Omi
    • B41J2/32
    • B41J2/35
    • A thermal head driving IC for supplying voltage to a plurality of heating resistors each controlled by a driving MOS transistor includes a switch for making and breaking electrically between a substrate and a source of the plurality of driving MOS transistors. In a case where the plurality of heating resistors are activated, the plurality of driving MOS transistors are turned on and the switch is turned off, whereby the substrate potential is floated. As a result, the substrate potential is forward-biased against the source by a substrate current generated in a high-electric-field depletion region near the drain, and a parasitic bipolar transistor turns on, whereby both the plurality of driving MOS transistors and the parasitic bipolar transistor turn on. In a case where the plurality of heating resistors are not activated, a signal for turning off the plurality of driving NMOS transistors is given, and the switch is turned on.
    • 用于向由驱动MOS晶体管控制的多个加热电阻器提供电压的热敏头驱动IC包括用于在衬底和多个驱动MOS晶体管的源极之间电气断开的开关。 在多个加热电阻器被激活的情况下,多个驱动MOS晶体管导通,开关断开,从而基板电位浮起。 结果,衬底电位通过在漏极附近的高电场耗尽区中产生的衬底电流而相对于源极被偏置,并且寄生双极晶体管导通,由此多个驱动MOS晶体管和 寄生双极晶体管导通。 在多个加热电阻器未被激活的情况下,给出用于关闭多个驱动NMOS晶体管的信号,并且开关导通。
    • 16. 发明申请
    • PHOTODETECTION DEVICE AND IMAGE DISPLAY DEVICE
    • 光电设备和图像显示设备
    • US20100253616A1
    • 2010-10-07
    • US12819849
    • 2010-06-21
    • Toshihiko OmiTaro Nakata
    • Toshihiko OmiTaro Nakata
    • G09G3/36H01L27/144H01L31/102
    • H01L31/101G01J1/02G01J1/0209G01J1/0214G01J1/0488G01J1/18G01J1/32G01J1/4204G01J1/4228G01J1/44G02F2201/58
    • Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device (10) puts cathode terminals of photodiodes (1 and 2) having different spectral characteristics, or a photodiode (1) provided with an optical filter and a photodiode (2) provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodes 1 and 2 store electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodes 1 and 2 are formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.
    • 提供了一种尺寸小且灵敏度高的光检测装置。 光检测装置(10)将具有不同光谱特性的光电二极管(1和2)的阴极端子或设置有滤光器的光电二极管(1)和设置有遮光层的光电二极管(2)放入开放状态 并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。 由于光电二极管1和2存储电荷,即使光电流小,也可以存储光电流以获得检测所需的电荷,从而可以实现半导体器件的小型化和高检测性能,其中光电二极管1 和2。 还可以通过使电荷存储时间根据光强度而变化来实现宽的动态范围,通过间歇地驱动差分检测时的差分检测所需的元件来抑制电力消耗,并且降低效果 从平均输出的闪烁。
    • 20. 发明申请
    • Photoelectric conversion device and image sensor including the same
    • 光电转换装置及包含其的图像传感器
    • US20070097455A1
    • 2007-05-03
    • US11262331
    • 2005-10-28
    • Toshihiko Omi
    • Toshihiko Omi
    • H04N1/04
    • H01L27/1463H01L27/14623H01L27/14625
    • A photoelectric conversion device, which is not influenced by low-frequency noise radiated from a power source line or the like, and an image sensor including the photoelectric conversion device are provided. The photoelectric conversion device includes a pixel which is constituted by a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type in the first semiconductor region, a first diffusion region of the first conductivity type on the second semiconductor region, and a second diffusion region of the second conductivity type in the second semiconductor region and in which an upper portion of the second semiconductor region is covered by a thick oxide film except a part of the upper portion which is covered by the second diffusion region. In the photoelectric conversion device, the first diffusion region is held at a predetermined potential.
    • 提供不受来自电源线等的辐射的低频噪声的影响的光电转换装置和包括该光电转换装置的图像传感器。 光电转换装置包括由第一导电类型的第一半导体区域,第一半导体区域中的第二导电类型的第二半导体区域,第二半导体区域上的第一导电类型的第一扩散区域构成的像素 以及在第二半导体区域中的第二导电类型的第二扩散区域,并且其中第二半导体区域的上部被除了被第二扩散区域覆盖的上部的一部分之外的厚氧化膜覆盖。 在光电转换装置中,第一扩散区域保持在预定电位。