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    • 12. 发明授权
    • SOI sense amplifier with cross-coupled bit line structure
    • 具有交叉耦合位线结构的SOI读出放大器
    • US07046045B2
    • 2006-05-16
    • US10852889
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G01R19/00G11C7/00H03F3/45
    • H03F3/45188
    • Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.
    • 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。
    • 14. 发明申请
    • SOI sense amplifier with cross-coupled bit line structure
    • 具有交叉耦合位线结构的SOI读出放大器
    • US20050264323A1
    • 2005-12-01
    • US10852889
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G11C11/419H03F3/45
    • H03F3/45188
    • Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.
    • 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。