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    • 3. 发明授权
    • SOI sense amplifier with cross-coupled body terminal
    • 具有交叉耦合体端子的SOI读出放大器
    • US07053668B2
    • 2006-05-30
    • US10852863
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G01R19/00G11C7/00H03F3/45
    • H03K3/012G11C7/065H03K3/356139
    • Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.
    • 用于通过将这些晶体管的主体连接到除地之外的电压来增加可以流过读出放大器中的数据线下拉晶体管的电流量的系统和方法。 在一个实施例中,读出放大器中的数据线下拉晶体管的主体被连接到读出放大器的相对侧上的中间节点,以增加通过数据线下拉晶体管的电流,并且还减少 通过位线晶体管的动作将中间节点处的电压拉低。 在一个实施例中,读出放大器还包括将中间节点预充电到未被下拉晶体管的阈值电压降低的预定电压的预充电电路。
    • 4. 发明申请
    • SOI sense amplifier with pre-charge
    • 具有预充电的SOI读出放大器
    • US20050264322A1
    • 2005-12-01
    • US10852868
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G11C11/419G11C7/06G11C7/12H03F3/45H03K3/356H03K19/0948
    • G11C7/065G11C7/12H03F3/45183H03F2203/45318
    • Systems and methods for pre-charging opposing nodes in a sense amplifier to substantially the same voltage in order to reduce or eliminate malfunctions arising from differences in threshold voltages of transistors coupled to the opposing nodes. One embodiment is a method including providing a silicon-on-insulator (SOI) sense amplifier having intermediate nodes between the transistors coupling each output data line to the corresponding input bit line and pre-charging each intermediate node to a predetermined voltage while the sense amplifier is not enabled. In one embodiment, the intermediate nodes are pre-charged by coupling them to a voltage source through pre-charge paths that do not include the data line pull-down transistors. In one embodiment, the method also includes decoupling the pre-charge paths after pre-charging the intermediate nodes and then enabling the sense amplifier.
    • 用于将读出放大器中的相对节点预充电到基本相同的电压的系统和方法,以便减少或消除由耦合到相对节点的晶体管的阈值电压的差异引起的故障。 一个实施例是一种方法,包括提供绝缘体上硅(SOI)读出放大器,该晶体管在晶体管之间具有中间节点,每个晶体管将每个输出数据线耦合到相应的输入位线,并将每个中间节点预充电到预定电压,而读出放大器 未启用 在一个实施例中,中间节点通过不包括数据线下拉晶体管的预充电路径将其耦合到电压源进行预充电。 在一个实施例中,该方法还包括在对中间节点预充电然后启用读出放大器之后去耦合预充电路径。
    • 5. 发明授权
    • SOI sense amplifier with cross-coupled bit line structure
    • 具有交叉耦合位线结构的SOI读出放大器
    • US07046045B2
    • 2006-05-16
    • US10852889
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G01R19/00G11C7/00H03F3/45
    • H03F3/45188
    • Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.
    • 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。
    • 7. 发明申请
    • SOI sense amplifier with cross-coupled bit line structure
    • 具有交叉耦合位线结构的SOI读出放大器
    • US20050264323A1
    • 2005-12-01
    • US10852889
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G11C11/419H03F3/45
    • H03F3/45188
    • Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.
    • 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。