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11. 发明申请

US20120322116A1 METHOD FOR TRANSFORMING STRAMENOPILES 有权
标题翻译：改性方法
公开(公告)号：US20120322116A1
公开(公告)日：2012-12-20
申请号：US13497894
申请日：2010-09-24
申请人： Keishi Sakaguchi , Takanori Matsuda , Takumi Kobayashi , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yosuke Taoka , Yuji Okita , Hitoshi Izumida , Shinichi Sugimoto
发明人： Keishi Sakaguchi , Takanori Matsuda , Takumi Kobayashi , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yosuke Taoka , Yuji Okita , Hitoshi Izumida , Shinichi Sugimoto
IPC分类号： C12P7/64 , C12N15/79
CPC分类号： C12P7/6409 , C11C3/00 , C12N9/0071 , C12N9/0083 , C12N15/79 , C12N15/8201 , C12N15/8247 , C12P7/6427
摘要： Disclosed is a transformation method whereby an ability to produce a useful substance of a stramenopile can be improved. The method for transforming a stramenopile comprises transferring a foreign gene into the stramenopile which is a microorganism belonging to the class Labyrinthula, more specifically, to a genus Labyrinthula, Altornia, Aplanochytrium, Schizochytrium, Aurantiochytrium, Thraustochytrium, Ulkenia, etc. Said foreign gene, which is a gene relating to tolerance against an antibiotic, a colorimetric protein and/or a fatty acid desaturase (Δ5 desaturase gene, Δ12 desaturase gene and/or ω3 desaturase gene), is transferred by using the electroporation or gene-gun technique.
摘要翻译：公开了能够提高产生有机物的能力的转化方法。用于转化stramenopile的方法包括将外源基因转移到作为属于Labyrinthula类的微生物的地幔中，更具体地是属于Labyrinthula，Altornia，Aplanochytrium，Schizochytrium，Aurantiochytrium，Thraustochytrium，Ulkenia等。所述外源基因，其是与抗生素，比色蛋白质和/或脂肪酸去饱和酶（＆Dgr。5去饱和酶基因，＆Dgr; 12去饱和酶基因和/或ω3去饱和酶基因）的耐受相关的基因通过使用电穿孔或基因 - 枪技术。

12. 发明授权

US08294089B2 Time of flight mass spectrometer and charged particle detector therefor 有权
标题翻译：飞行时间质谱仪和带电粒子检测器
公开(公告)号：US08294089B2
公开(公告)日：2012-10-23
申请号：US12407451
申请日：2009-03-19
申请人： Akio Suzuki , Etsuo Iizuka , Katsutoshi Nonaka , Masahiro Hayashi , Yuuya Washiyama
发明人： Akio Suzuki , Etsuo Iizuka , Katsutoshi Nonaka , Masahiro Hayashi , Yuuya Washiyama
IPC分类号： H01J49/40
CPC分类号： H01J49/025
摘要： In a charged particle detecting apparatus 100 for which an MCP is sandwiched with an IN electrode 1 and an OUT electrode and an anode electrode and a rear cover are installed therebehind, the component members in the rear of the IN electrode 1 are arranged further inside than the IN electrode 1 when viewed from an MCP incident surface, and the charged particle detecting apparatus 100 is fixed by screwing and the like to a cabinet wall surface 330 of a TOF-MS by using a flange portion provided at a part of IN electrode 1 projected further outside than the rear component members.
摘要翻译：在其中MCP被夹在IN电极1和OUT电极以及阳极电极和后盖之间的带电粒子检测装置100中，IN电极1的后部的部件被布置在从MCP入射表面观察IN电极1，并且带电粒子检测装置100通过使用设置在IN电极1的一部分的凸缘部分通过螺钉固定到TOF-MS的柜壁表面330 远远超过后部部件。

13. 发明申请

US20120033251A1 Image forming apparatus, and computer program product for image forming 有权
标题翻译：图像形成装置和图像形成用计算机程序产品
公开(公告)号：US20120033251A1
公开(公告)日：2012-02-09
申请号：US13137297
申请日：2011-08-04
申请人： Daisuke Okada , Noboru Tamura , Nobuhiro Shindo , Hideaki Matsui , Hajime Kubota , Yuto Shibata , Takeo Momose , Masahiro Hayashi
发明人： Daisuke Okada , Noboru Tamura , Nobuhiro Shindo , Hideaki Matsui , Hajime Kubota , Yuto Shibata , Takeo Momose , Masahiro Hayashi
IPC分类号： G06K15/02
CPC分类号： G06F3/1239 , G06F3/1212 , G06F3/1222 , G06F3/1267 , G06F3/1273 , G06F3/1274 , G06F3/1279
摘要： An image forming apparatus includes a receiving unit; a data saving unit; a drawing data generating unit; a log storage unit that stores a processing log; an image forming unit; and a data management unit. The data management unit, when the print job is analyzed as a time designated print job; causes the data generating unit to generate the drawing data; causes the data saving unit to save the drawing data; that, when analyzed printing being enabled at the designated print time, causes the image forming unit to perform image formation based on the drawing data and causes the log storage unit to store therein a processing log; and that, when printing is analyzed as disabled at the designated print time, performs processing corresponding to a print disabled state preset and causes the log storage unit to store therein a processing log about the processing.
摘要翻译：图像形成装置包括：接收单元; 数据保存单元; 绘图数据生成单元; 存储处理日志的日志存储单元; 图像形成单元; 和数据管理单元。当打印作业被分析为时间指定打印作业时，数据管理单元; 使数据生成单元生成绘图数据; 使数据保存单元保存绘图数据; 当在指定的打印时间分析打印被启用时，使图像形成单元基于绘图数据执行图像形成，并使日志存储单元在其中存储处理日志; 并且当在指定的打印时间将打印分析为禁用时，执行与打印禁用状态预设相对应的处理，并使日志存储单元在其中存储关于处理的处理日志。

14. 发明授权

US07663113B2 Semiconductor device and radiation detector employing it 失效
标题翻译：采用它的半导体器件和辐射探测器
公开(公告)号：US07663113B2
公开(公告)日：2010-02-16
申请号：US10546698
申请日：2004-02-26
申请人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
发明人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
IPC分类号： G01J1/00 , A61B6/00
CPC分类号： H05K3/3436 , H01L23/15 , H01L23/49827 , H01L23/552 , H01L24/16 , H01L24/81 , H01L27/1462 , H01L27/14636 , H01L27/14658 , H01L27/14676 , H01L31/02322 , H01L2224/0345 , H01L2224/0401 , H01L2224/0603 , H01L2224/13099 , H01L2224/1403 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/09701 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15312 , H01L2924/15788 , H01L2924/30105 , H01L2924/3025 , H05K1/0306 , H05K2201/0979 , H05K2203/0455 , Y02P70/613 , H01L2924/00
摘要： A wiring substrate to which a semiconductor element 10 is connected, is a wiring substrate 20 comprised of a glass substrate with through-hole groups 20d, each group consisting of a plurality of through holes 20c extending from input surface 20a to output surface 20b and formed in a predetermined array, and conductive members 21 formed on respective inner walls of the through holes 20c in each through-hole group 20d so as to establish electrical continuity between input surface 20a and output surface 20b. A bump electrode 12 of semiconductor element 10 connected to the input surface 20a corresponds to each through-hole group 20d, conductive member 21, and conductive part 22 formed in a region covering the through-hole group 20d, and is connected so that a portion of the bump electrode 12 enters into an interior of each of the through holes 20c. This provides a semiconductor device in which good connection is made between the semiconductor element and the corresponding conduction path in the wiring substrate, and a radiation detector using it.
摘要翻译：连接有半导体元件10的布线基板是由具有通孔组20d的玻璃基板构成的布线基板20，每个组由从输入表面20a延伸到输出表面20b并形成的多个通孔20c 以及形成在每个通孔组20d中的通孔20c的相应内壁上的导电构件21，以便在输入表面20a和输出表面20b之间建立电连续性。连接到输入表面20a的半导体元件10的突起电极12对应于形成在覆盖通孔组20d的区域中的每个通孔组20d，导电部件21和导电部分22，并且连接成使得部分突起电极12进入每个通孔20c的内部。这提供了一种半导体器件，其中在半导体元件和布线基板中的相应导电路径之间形成良好的连接，以及使用它的放射线检测器。

15. 发明授权

US07655891B2 Charged-particle detecting apparatus 有权
标题翻译：带电粒子检测装置
公开(公告)号：US07655891B2
公开(公告)日：2010-02-02
申请号：US11723951
申请日：2007-03-22
申请人： Akio Suzuki , Masahiro Hayashi , Katsutoshi Nonaka , Yuuya Washiyama
发明人： Akio Suzuki , Masahiro Hayashi , Katsutoshi Nonaka , Yuuya Washiyama
IPC分类号： H01J49/06 , G01T1/28 , G01T1/29 , H01J43/24
CPC分类号： H01J49/025
摘要： The present invention relates to a charged-particle detecting apparatus having a structure which enables adjustment of a potential distribution so as to stably maintain flight loci of charged particles without depending on a change in a voltage-applied state. The charged-particle detecting apparatus comprises a first electrode, an MCP, a second electrode, a third electrode that functions as an anode, and a rear cover arranged in order along a predetermined reference axis. The third electrode is arranged on the opposite side of the MCP with respect to the second electrode, and is electrically connected to an output signal part via a capacitor. In particular, the first electrode is arranged so as to become a part of the outer surface of the charged-particle detecting apparatus, and components positioned between the first electrode and the rear cover have contours with section sizes equal to or smaller than that of the contour of the first electrode when viewed from the first electrode side toward the rear cover.
摘要翻译：本发明涉及具有能够调整电位分布的结构的带电粒子检测装置，以便不依赖于施加电压的状态的变化来稳定地保持带电粒子的飞行轨迹。带电粒子检测装置包括第一电极，MCP，第二电极，用作阳极的第三电极和沿着预定参考轴依次排列的后盖。第三电极相对于第二电极布置在MCP的相对侧上，并且经由电容器电连接到输出信号部分。特别地，第一电极被布置成成为带电粒子检测装置的外表面的一部分，并且位于第一电极和后盖之间的部件具有等于或小于当从第一电极侧朝向后盖观察时，第一电极的轮廓。

16. 发明授权

US07507971B2 Radioactive ray detector 失效
标题翻译：放射线检测器
公开(公告)号：US07507971B2
公开(公告)日：2009-03-24
申请号：US10552705
申请日：2004-04-09
申请人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
发明人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
IPC分类号： G01T1/26
CPC分类号： H01L27/14661 , G01T1/2018 , H01L27/14634 , H01L31/02322
摘要： A wiring substrate section 2 is provided between a radiation detecting section 1, which is formed of a scintillator 10 and a PD array 15, and signal processing elements 30 and 32 for processing a detected signal outputted from the PD array 15, and the wiring substrate section 2 has a wiring substrate 20 which is formed of a glass material having a radiation shielding function and in which a conductive member 21 serving as a conduction path for guiding the detected signal therethrough is provided in a through hole 20c. Relative to the through hole 20c of the wiring substrate 20, the signal processing elements 30 and 32 of the signal processing section 3, located downstream of the wiring substrate 20, are each disposed in an area excluding those areas on the extension of the through holes 20c, and this allows the signal processing elements 30 and 32 not to be seen through the through holes 20c. This arrangement realizes a radiation detector which suppresses radiation made incident on the signal processing means located downstream of the wiring substrate.
摘要翻译：布线基板部分2设置在由闪烁体10和PD阵列15形成的辐射检测部分1和用于处理从PD阵列15输出的检测信号的信号处理元件30和32之间，以及布线基板部分2具有布线基板20，该布线基板20由具有辐射屏蔽功能的玻璃材料形成，并且其中用作导引检测信号的导电路径的导电部件21设置在通孔20c中。相对于布线基板20的通孔20c，位于布线基板20下游的信号处理部3的信号处理部30,32分别配置在除了贯通孔的延伸部的那些区域以外的区域 20c，并且这允许信号处理元件30和32不通过通孔20c被看到。这种布置实现了辐射检测器，其抑制入射到位于布线基板下游的信号处理装置的辐射。

17. 发明申请

US20090056567A1 PRINTING APPARATUS 审中-公开
标题翻译：打印设备
公开(公告)号：US20090056567A1
公开(公告)日：2009-03-05
申请号：US12198316
申请日：2008-08-26
申请人： Yukio Ando , Masahiro Hayashi
发明人： Yukio Ando , Masahiro Hayashi
IPC分类号： B41C1/06 , B41D7/00
CPC分类号： B41J3/4078 , B41F17/005 , B41J3/28 , B41J11/06
摘要： A printing apparatus for printing on a print substrate by sequentially conducting a plurality of processing operations. The printing apparatus includes a pallet configured to receive the print substrate, and work station units each comprising a conveyer mechanism configured to convey the pallet and a work mechanism configured to conduct a predetermined processing operation to the print substrate on the pallet. A plurality of the work station units are aligned adjacent to each other, and the work station units are configured to be replaceable or rearrangeable to change the sequence of the plurality of processing operations.
摘要翻译：一种打印装置，用于通过依次进行多个处理操作在打印基板上进行打印。打印装置包括构造成接收打印基板的托盘以及各自包括构造成输送托盘的输送机构和被构造成对托盘上的打印基板进行预定处理操作的工作机构的工作站单元。多个工作站单元彼此相邻配置，并且工作站单元被配置为可更换或可重排以改变多个处理操作的顺序。

18. 发明申请

US20070029670A1 Semiconductor device and radiation detector employing it 失效
标题翻译：采用它的半导体器件和辐射探测器
公开(公告)号：US20070029670A1
公开(公告)日：2007-02-08
申请号：US10546601
申请日：2004-02-24
申请人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
发明人： Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
IPC分类号： H01L23/48
CPC分类号： H05K3/002 , H01L23/13 , H01L27/14634 , H01L27/14661 , H01L27/14663 , H01L2224/16235 , H01L2224/16237 , H01L2924/0102 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/3025 , H05K1/0306 , H05K3/3436 , H05K2201/09827 , H05K2203/0235
摘要： A wiring substrate 20, comprising a glass substrate, formed by integrally bundling a plurality of glass fibers and provided with through holes 20c, and conductive members 21, disposed at through holes 20c, is used. Input portions 21a of conductive members 21, formed on an input surface 20a of this wiring substrate 20, are connected to bump electrodes 17, which are provided on an output surface 15b of a PD array 15 in one-to-one correspondence with respect to conductive members 21, thereby arranging a semiconductor device 5. A radiation detector is arranged by connecting a scintillator 10 via an optical adhesive agent 11 to a light-incident surface 15a of PD array 15 and connecting a signal processing element 30 via bump electrodes 31 to output surface 20b of wiring substrate 20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.
摘要翻译：使用包括通过一体地捆扎多个玻璃纤维并且设置有通孔20c而形成的玻璃基板和布置在通孔20c处的导电构件21的布线基板20。形成在该布线基板20的输入面20a上的导电部件21的输入部21a与凸起电极17连接，突起电极17以一一对应的方式设置在PD阵列15的输出面15b上相对于导电构件21，由此布置半导体器件5。通过光学粘合剂11将闪烁体10连接到PD阵列15的光入射面15a并通过凸块电极31将信号处理元件30连接到布线基板20的输出面20b而布置放射线检测器。由此，能够令人满意地连接半导体元件和布线基板的对应导电路径的半导体器件，并且由此提供使用该半导体器件的放射线检测器。

19. 发明申请

US20060286733A1 Method for manufacturing a semiconductor element 有权
公开(公告)号：US20060286733A1
公开(公告)日：2006-12-21
申请号：US11453638
申请日：2006-06-14
申请人： Masahiro Hayashi , Takahisa Akiba , Akihiro Shiraishi
发明人： Masahiro Hayashi , Takahisa Akiba , Akihiro Shiraishi
IPC分类号： H01L21/8234
CPC分类号： H01L21/823814 , H01L21/823807 , H01L21/823857
摘要： A method for manufacturing a semiconductor element, comprises: (1) forming a first insulating layer for electric field relaxation that is thicker than a first gate insulating layer in a first channel region of a transistor of a first conductive type that is one of P-type and N-type polarity formed on a semiconductor silicon wafer to surround an edge of a first gate electrode in order to reduce an electric field concentrated to a region surrounding the edge of the first gate electrode because of a voltage applied to the first gate electrode and a first drain region of the transistor of the first conductive type, and forming a second insulating layer for electric field relaxation that is thicker than a second gate insulating layer in a second channel region of a transistor of a second conductive type to surround the edge of the first gate electrode in order to reduce an electric field concentrated to a region surrounding an edge of a second gate electrode because of a voltage applied to the second gate electrode and a second drain region of the transistor of the second conductive type; (2) forming a first photoresist layer in an uppermost section of the wafer; (3) forming a first resist pattern by performing first photolithography to remove the photoresist layer in a region where ion implantation of an impurity of the first conductive type is to be performed for forming a first region for electric field relaxation so as to surround the drain region of the transistor of the first conductive type and the first insulating layer for electric field relaxation; (4) removing the first resist pattern after the ion implantation of the impurity of the first conductive type by employing the first resist pattern as a mask; (5) performing first heat treatment to diffuse the impurity of the first conductive type; (6) forming a second photoresist layer in an uppermost section of the wafer; (7) forming a second resist pattern by performing second photolithography to remove the second photoresist layer in a region where ion implantation of an impurity of the second conductive type is to be performed for forming a second region for electric field relaxation so as to surround the drain region of the transistor of the second conductive type and the second insulating layer for electric field relaxation; (8) removing the second resist pattern after the ion implantation of the impurity of the second conductive type by employing the second resist pattern as a mask; and (9) performing second heat treatment to form the first region for electric field relaxation and the second region for electric field relaxation. The first region for electric field relaxation is provided by the first heat treatment to diffuse the impurity of the first conductive type in (5) and the second heat treatment in (9).

20. 发明申请

US20060163623A1 Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US20060163623A1
公开(公告)日：2006-07-27
申请号：US11294801
申请日：2005-12-06
申请人： Takafumi Noda , Masahiro Hayashi
发明人： Takafumi Noda , Masahiro Hayashi
IPC分类号： H01L29/76
CPC分类号： H01L29/0619 , H01L29/0653 , H01L29/0692 , H01L29/7833
摘要： A semiconductor device includes a semiconductor layer, an insulated-gate field effect transistor provided in the semiconductor layer, an etching stopper film provided above the insulated-gate field effect transistor, and an interlayer insulating layer provided above the etching stopper film; the insulated-gate field effect transistor including a gate insulating layer provided on the semiconductor layer, a gate electrode provided on the gate insulating layer, and an impurity region that constitutes a source region or a drain region provided in the semiconductor layer; wherein a removed region made by removing the etching stopper film is provided in at least part of an area that is located outside the gate insulating layer and above an area at a position other than a position sandwiched by the gate insulating layer and the impurity region.

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