专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5860181A Method of and apparatus for cleaning workpiece 失效
标题翻译：清洁工件的方法和设备
公开(公告)号：US5860181A
公开(公告)日：1999-01-19
申请号：US716889
申请日：1996-09-20
申请人： Toshiro Maekawa , Satomi Hamada , Koji Ono , Atsushi Shigeta , Masako Kodera
发明人： Toshiro Maekawa , Satomi Hamada , Koji Ono , Atsushi Shigeta , Masako Kodera
IPC分类号： B08B1/00 , B08B1/04 , B24B53/007 , H01L21/00 , H01L21/304 , H01L21/687 , A46B13/02 , A47L25/00
CPC分类号： H01L21/68728 , B08B1/00 , B08B1/007 , B08B1/04 , B24B53/017 , H01L21/67046 , H01L21/67051
摘要： A method of and an apparatus for cleaning workpiece is suitable for cleaning a substrate such as a semiconductor substrate, a glass substrate, or a liquid crystal panel to a high level of cleanliness. The method of cleaning a workpiece comprises the steps of holding a workpiece, scrubbing the workpiece with a cleaning member, and rubbing the cleaning member against a member having a rough surface to carry out a self-cleaning of the cleaning member. The cleaning member which is contaminated by having scrubbed the workpiece is rubbed against the rough surface, and the rough surface scrapes the contaminant off the cleaning member. Therefore, the contaminant can effectively be removed from the cleaning member, and hence the cleaning member has a high self-cleaning effect.
摘要翻译：用于清洁工件的方法和装置适用于清洁诸如半导体衬底，玻璃衬底或液晶面板的衬底以达到高清洁度。清洁工件的方法包括以下步骤：保持工件，用清洁构件擦拭工件，并将清洁构件摩擦抵靠具有粗糙表面的构件，以进行清洁构件的自清洁。被擦洗工件污染的清洁部件与粗糙表面摩擦，粗糙表面将污染物从清洁部件上刮下。因此，可以有效地从清洁部件去除污染物，因此清洁部件具有高的自清洁效果。

12. 发明授权

US5695601A Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method 失效
标题翻译：通过CMP方法平面化半导体本体的方法和使用该方法制造半导体器件的装置
公开(公告)号：US5695601A
公开(公告)日：1997-12-09
申请号：US578894
申请日：1995-12-27
申请人： Masako Kodera , Atsushi Shigeta , Shiro Mishima , Hiromi Yajima , Riichirou Aoki
发明人： Masako Kodera , Atsushi Shigeta , Shiro Mishima , Hiromi Yajima , Riichirou Aoki
IPC分类号： B24B37/04 , B24B49/12 , H01L21/66 , H01L21/306
CPC分类号： B24B37/005 , B24B37/042 , B24B49/12 , H01L22/20
摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.
摘要翻译：在CMP单元上抛光形成在晶片上的膜。此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。

13. 发明授权

US07101259B2 Polishing method and apparatus 失效
公开(公告)号：US07101259B2
公开(公告)日：2006-09-05
申请号：US10694047
申请日：2003-10-28
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： B24B49/00 , B24B51/00 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

14. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

15. 发明申请

US20130115774A1 METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS 有权
标题翻译：化学平面化学和化学平面化装置的方法
公开(公告)号：US20130115774A1
公开(公告)日：2013-05-09
申请号：US13422969
申请日：2012-03-16
申请人： Masako Kodera , Yukiteru Matsui
发明人： Masako Kodera , Yukiteru Matsui
IPC分类号： H01L21/3105 , C23F1/08 , H01L21/306
CPC分类号： H01L21/67086 , H01L21/31055 , H01L21/67011
摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.
摘要翻译：根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率使具有不规则性的膜与处理液接触。

16. 发明授权

US07727891B2 Method of manufacturing a semiconductor device using a wet process 有权
标题翻译：使用湿法制造半导体器件的方法
公开(公告)号：US07727891B2
公开(公告)日：2010-06-01
申请号：US11074774
申请日：2005-03-09
申请人： Yoshitaka Matsui , Masako Kodera
发明人： Yoshitaka Matsui , Masako Kodera
IPC分类号： H01L21/461
CPC分类号： H01L21/02071 , H01L21/31116 , H01L21/3212 , H01L21/76814 , H01L21/76838 , H01L21/7684 , H01L21/76883
摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
摘要翻译：一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

17. 发明申请

US20070254558A1 Polishing Apparatus and Polishing Method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20070254558A1
公开(公告)日：2007-11-01
申请号：US11661141
申请日：2005-08-26
申请人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
发明人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

18. 发明申请

US20070173056A1 Semiconductor device fabrication method and polishing apparatus 审中-公开
标题翻译：半导体器件制造方法和抛光装置
公开(公告)号：US20070173056A1
公开(公告)日：2007-07-26
申请号：US11652505
申请日：2007-01-12
申请人： Masako Kodera
发明人： Masako Kodera
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C25F3/02 , H01L21/3212 , H01L21/32125 , H01L21/7684
摘要： A method for fabricating a semiconductor device includes forming a barrier metal film on a substrate with an opening defined therein, forming a copper-containing film on said barrier metal film after having formed said barrier metal film on a surface of said substrate and an inner wall of said opening, and polishing said copper-containing film and said barrier metal film while applying a voltage to said substrate in a state that said copper-containing film and said barrier metal film are exposed.
摘要翻译：一种制造半导体器件的方法包括：在其上限定有开口的基板上形成阻挡金属膜，在所述基板的表面上形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜，并且在所述含铜膜和所述阻挡金属膜露出的状态下对所述基板施加电压，并且对所述含铜膜和所述阻挡金属膜进行抛光。

19. 发明授权

US06410439B1 Semiconductor polishing apparatus and method for chemical/mechanical polishing of films 失效
标题翻译：半导体抛光装置及薄膜化学/机械抛光方法
公开(公告)号：US06410439B1
公开(公告)日：2002-06-25
申请号：US09527528
申请日：2000-03-16
申请人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
发明人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
IPC分类号： H01L21302
CPC分类号： B24B37/013 , H01L21/30625 , H01L21/31053
摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.
摘要翻译：在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

20. 发明授权

US06224464B1 Polishing method and polisher used in the method 失效
标题翻译：该方法中使用的抛光方法和抛光机
公开(公告)号：US06224464B1
公开(公告)日：2001-05-01
申请号：US08763342
申请日：1996-12-11
申请人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
发明人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
IPC分类号： B24B100
CPC分类号： C09G1/02 , H01L21/31053
摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.
摘要翻译：根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶。此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团加入到抛光溶液中的羧基的氢原子）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式