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11. 发明申请

US20050176223A1 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US20050176223A1
公开(公告)日：2005-08-11
申请号：US10988561
申请日：2004-11-16
申请人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
发明人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
IPC分类号： C23C16/00 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/425 , H01L21/4763
CPC分类号： H01L21/31662 , H01J37/32082 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/3144
摘要： A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
摘要翻译：衬底处理方法包括在硅衬底表面上形成氧化膜的步骤，并且通过将氧化膜暴露于由通过平面天线引入的微波形成的等离子体中激发的氮自由基而将氮原子引入到氧化膜中。

12. 发明申请

US20050153570A1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US20050153570A1
公开(公告)日：2005-07-14
申请号：US10986323
申请日：2004-11-12
申请人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
发明人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
IPC分类号： H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469 , H01L21/76 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28167 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L29/518 , H01L29/7833
摘要： A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.
摘要翻译：通过氮化形成在硅衬底上的氧化膜形成氧氮化物膜的衬底处理方法包括氮化处理步骤，其通过由微波激发等离子体激发氮气而形成的自由基或离子来氮化氧化膜的表面，氮化处理通过将微波激发等离子体的电子温度设定为2eV以下，通过将待处理基板的处理空间中的氧气的驻留时间设定为500℃以下，进行基板温度为500℃以下持有，至少两秒钟。

13. 发明授权

US07662236B2 Method for forming insulation film 失效
标题翻译：绝缘膜形成方法
公开(公告)号：US07662236B2
公开(公告)日：2010-02-16
申请号：US12145971
申请日：2008-06-25
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

14. 发明申请

US20100035439A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100035439A1
公开(公告)日：2010-02-11
申请号：US12536913
申请日：2009-08-06
申请人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
发明人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
IPC分类号： H01L21/31
CPC分类号： H01L21/31641 , C23C16/40 , C23C16/45529 , C23C16/45546
摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
摘要翻译：本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数表演。

15. 发明申请

US20090163036A1 Substrate Treating Method 审中-公开
标题翻译：基板处理方法
公开(公告)号：US20090163036A1
公开(公告)日：2009-06-25
申请号：US12392630
申请日：2009-02-25
申请人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/31
CPC分类号： H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there is provided a step of purging oxygen after the oxidizing step but before said nitriding step from an ambient in which said nitriding processing is conducted.
摘要翻译：基板处理方法包括通过氧化硅基板表面形成氧化膜的步骤和氧化膜氮化的步骤以形成氮氧化物膜，其中提供了在氧化步骤之后但在所述氮化步骤之前，从进行所述氮化处理的环境。

16. 发明授权

US07517751B2 Substrate treating method 失效
标题翻译：底物处理方法
公开(公告)号：US07517751B2
公开(公告)日：2009-04-14
申请号：US11076282
申请日：2005-03-10
申请人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/8242
CPC分类号： H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there is provided a step of purging oxygen after the oxidizing step but before said nitriding step from an ambient in which said nitriding processing is conducted.
摘要翻译：基板处理方法包括通过氧化硅基板表面形成氧化膜的步骤和氧化膜氮化的步骤以形成氮氧化物膜，其中提供了在氧化步骤之后但在所述氮化步骤之前，从进行所述氮化处理的环境。

17. 发明授权

US07250375B2 Substrate processing method and material for electronic device 失效
标题翻译：基板加工方法及电子元件材料
公开(公告)号：US07250375B2
公开(公告)日：2007-07-31
申请号：US10485410
申请日：2002-08-02
申请人： Toshio Nakanishi , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Toshio Nakanishi , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/31 , H01L21/461 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/02247 , H01L21/02332 , H01L21/0234 , H01L21/2236 , H01L21/28202 , H01L21/3003 , H01L21/3144 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.
摘要翻译：一种电子设备的处理方法，至少包括：在电子器件基板的表面上提供氮自由基的氮化步骤（a），从而在其表面上形成氮化物膜; 以及将氢自由基供给到电子器件基板的表面的氢化步骤（b）。通过使用该方法，由于在Si衬底等的氮化时可能发生的周转现象，可以恢复绝缘膜的电性能的劣化。

18. 发明授权

US07232772B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US07232772B2
公开(公告)日：2007-06-19
申请号：US10988561
申请日：2004-11-16
申请人： Seiji Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
发明人： Seiji Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01J37/32082 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/3144
摘要： A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
摘要翻译：衬底处理方法包括在硅衬底表面上形成氧化膜的步骤，并且通过将氧化膜暴露于由通过平面天线引入的微波形成的等离子体中激发的氮自由基而将氮原子引入到氧化膜中。

19. 发明授权

US07163877B2 Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing 有权
标题翻译：使用等离子体处理修改包含高k层的栅极电介质叠层的方法和系统
公开(公告)号：US07163877B2
公开(公告)日：2007-01-16
申请号：US10920990
申请日：2004-08-18
申请人： Hiroaki Niimi , Luigi Colombo , Koji Shimomura , Takuya Sugawara , Tatsuo Matsudo
发明人： Hiroaki Niimi , Luigi Colombo , Koji Shimomura , Takuya Sugawara , Tatsuo Matsudo
IPC分类号： H01L21/21 , H01L21/42
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02274 , H01L21/28185 , H01L21/28202 , H01L21/3115 , H01L21/3144 , H01L21/3165 , H01L29/513 , H01L29/517
摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
摘要翻译：一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。

20. 发明申请

US20050170543A1 Substrate treating method and production method for semiconductor device 失效
标题翻译：半导体器件的基板处理方法及其制造方法
公开(公告)号：US20050170543A1
公开(公告)日：2005-08-04
申请号：US10500214
申请日：2002-12-25
申请人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/28 , H01L21/30 , H01L21/8242 , H01L29/51 , H01L21/00 , H01L21/322 , H01L21/84
CPC分类号： H01L21/28194 , H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L27/10873 , H01L29/518
摘要： In a substrate processing method that exposes to hydrogen radicals (including heavy hydrogen radicals) a substrate for an electronic device on which substrate a semiconductor element is formed, the hydrogen radicals are excited by plasma formed by emitting microwaves to a planar antenna.
摘要翻译：在暴露于氢自由基（包括重氢自由基）的衬底处理方法中，其上形成半导体元件的电子器件的衬底，通过向平面天线发射微波形成的等离子体激发氢自由基。

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