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1. 发明申请

US20100035439A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100035439A1
公开(公告)日：2010-02-11
申请号：US12536913
申请日：2009-08-06
申请人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
发明人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
IPC分类号： H01L21/31
CPC分类号： H01L21/31641 , C23C16/40 , C23C16/45529 , C23C16/45546
摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
摘要翻译：本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数表演。

2. 发明授权

US08336487B2 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US08336487B2
公开(公告)日：2012-12-25
申请号：US13095444
申请日：2011-04-27
申请人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
发明人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
IPC分类号： C23C16/52 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31641 , C23C16/40 , C23C16/45529 , C23C16/45546
摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
摘要翻译：本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数表演。

3. 发明授权

US07968472B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US07968472B2
公开(公告)日：2011-06-28
申请号：US12536913
申请日：2009-08-06
申请人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
发明人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31641 , C23C16/40 , C23C16/45529 , C23C16/45546
摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
摘要翻译：本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数表演。

4. 发明授权

US09422620B2 Translucent hard thin film 有权
标题翻译：半透明硬薄膜
公开(公告)号：US09422620B2
公开(公告)日：2016-08-23
申请号：US13700686
申请日：2012-02-16
申请人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
发明人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
IPC分类号： C03C17/34 , C23C14/06 , C23C14/10 , C23C14/00 , C23C28/00 , C23C28/04
CPC分类号： C23C14/0635 , C03C17/3441 , C03C2217/78 , C23C14/0078 , C23C14/10 , C23C28/04 , C23C28/42 , Y10T428/24975
摘要： A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.
摘要翻译：提供透光性和膜强度高的半透明硬质薄膜。半透明硬质薄膜可以由形成在基板表面上的层叠膜构成，其中层叠膜具有通过交替堆叠多个SiO 2层和SiC层而获得的超晶格结构，并且整个膜厚度为3000nm以上。 SiC层中的每层的膜厚度为5〜30nm，SiC层的SiO 2层的膜厚为30〜60％。

5. 发明申请

US20110168544A1 Manufacturing Method of Optical Filter 审中-公开
标题翻译：光滤波器制造方法
公开(公告)号：US20110168544A1
公开(公告)日：2011-07-14
申请号：US13120764
申请日：2009-09-14
申请人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
IPC分类号： C23C14/34 , B05D3/10 , B05D5/06
CPC分类号： C23C14/0078 , C03C17/001 , C03C2218/31 , H01J37/32082
摘要： [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed.[Solution] By performing a cleaning step P1 for cleaning a substrate S by means of a solution including water, a pre-treatment step P3 for plasma-treating a surface of the substrate S cleaned in the cleaning step P1 by plasma of an oxygen gas, and a thin film formation step (P4, P5) for forming the thin film on the surface of the substrate S plasma-treated in the pre-treatment step P3, the foreign substance adhered onto the surface of the substrate can be effectively removed. In the pre-treatment step P3, only the oxygen gas is introduced to an area where the plasma is generated, and a flow rate of the oxygen gas to be introduced is greater than a flow rate of the oxygen gas introduced in the thin film formation step. Thus, the foreign substance adhered onto the surface of the substrate S through OH bonds in the cleaning step is effectively eliminated before the thin film formation step (P4, P5), so that generation of a film absent part is prevented.
摘要翻译：通过在形成薄膜之前通过清洗除去附着在基板的表面上的异物，提供具有良好的膜质量的滤光器的制造方法。 [解决方案]通过执行用于通过包括水的溶液清洁基板S的清洁步骤P1，用于等离子体处理在清洁步骤P1中清洁的基板S的表面的预处理步骤P3通过氧气等离子体以及用于在预处理步骤P3中等离子体处理的基板S的表面上形成薄膜的薄膜形成步骤（P4，P5），可以有效地去除附着在基板表面上的异物。在预处理工序P3中，仅将氧气导入到产生等离子体的区域，导入氧气的流量比导入薄膜层的氧气的流量大步。因此，在薄膜形成工序（P4，P5）之前，在清洗工序中通过OH键附着在基板S的表面上的异物被有效地消除，从而防止产生不存在膜的部件。

6. 发明授权

US07622402B2 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US07622402B2
公开(公告)日：2009-11-24
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

7. 发明申请

US20080274370A1 Method for Forming Insulation Film 失效
标题翻译：绝缘膜成型方法
公开(公告)号：US20080274370A1
公开(公告)日：2008-11-06
申请号：US12145971
申请日：2008-06-25
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： B32B15/00 , B32B15/20
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

8. 发明申请

US20070218687A1 Process for producing materials for electronic device 审中-公开
标题翻译：电子设备材料生产工艺
公开(公告)号：US20070218687A1
公开(公告)日：2007-09-20
申请号：US11798029
申请日：2007-05-09
申请人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
发明人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
IPC分类号： H01L21/44
CPC分类号： H01L21/28185 , C23C16/401 , C23C16/402 , C23C16/56 , H01J37/3222 , H01J37/3244 , H01L21/02164 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31658 , H01L21/31662 , H01L21/76801 , H01L21/76826 , H01L21/76828 , H01L29/40114 , H01L29/517 , H01L29/518
摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.
摘要翻译：一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜。

9. 发明申请

US20050176223A1 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US20050176223A1
公开(公告)日：2005-08-11
申请号：US10988561
申请日：2004-11-16
申请人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
发明人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
IPC分类号： C23C16/00 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/425 , H01L21/4763
CPC分类号： H01L21/31662 , H01J37/32082 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/3144
摘要： A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
摘要翻译：衬底处理方法包括在硅衬底表面上形成氧化膜的步骤，并且通过将氧化膜暴露于由通过平面天线引入的微波形成的等离子体中激发的氮自由基而将氮原子引入到氧化膜中。

10. 发明申请

US20050153570A1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US20050153570A1
公开(公告)日：2005-07-14
申请号：US10986323
申请日：2004-11-12
申请人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
发明人： Seijii Matsuyama , Takuya Sugawara , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki
IPC分类号： H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469 , H01L21/76 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28167 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L29/518 , H01L29/7833
摘要： A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.
摘要翻译：通过氮化形成在硅衬底上的氧化膜形成氧氮化物膜的衬底处理方法包括氮化处理步骤，其通过由微波激发等离子体激发氮气而形成的自由基或离子来氮化氧化膜的表面，氮化处理通过将微波激发等离子体的电子温度设定为2eV以下，通过将待处理基板的处理空间中的氧气的驻留时间设定为500℃以下，进行基板温度为500℃以下持有，至少两秒钟。

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