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11. 发明授权

US07135940B2 Tunable filter and portable telephone 失效
标题翻译：可调滤波器和便携式电话
公开(公告)号：US07135940B2
公开(公告)日：2006-11-14
申请号：US11039872
申请日：2005-01-24
申请人： Takashi Kawakubo , Ryoichi Ohara , Kazuhide Abe , Hiroshi Yoshida , Hiroshi Tsurumi
发明人： Takashi Kawakubo , Ryoichi Ohara , Kazuhide Abe , Hiroshi Yoshida , Hiroshi Tsurumi
IPC分类号： H03H21/00 , H03H9/54 , H03H9/64
CPC分类号： H03J3/08 , H03H9/542 , H03H9/605 , H03H2210/012 , H03H2210/015 , H03J1/0008
摘要： A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.
摘要翻译：可调谐滤波器具有多个可变电容器和多个电感器元件，每个电感器元件形成在公共基板上，通过使用多个可变电容器的至少一部分和多个电感器元件的一部分形成的滤波器电路，通过使用多个可变电容器的至少一部分和多个电感器元件的一部分形成的监视电路，检测监视电路的规定电路常数的检测电路，存储与参考电路有关的信息的存储器基于由检测电路检测的结果和存储在存储器中的信息，控制监视电路中的可变电容器的电容和滤波器电路中的可变电容器的电容的电容控制电路。

12. 发明申请

US20050059375A1 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US20050059375A1
公开(公告)日：2005-03-17
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H03K3/354 , H03B1/00 , H03B5/30 , H03B5/32 , H03H9/17 , H03L7/08 , H03L7/089 , H03L7/099 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/187 , H03L7/199 , H04B1/06 , H04B7/00 , H04B17/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

13. 发明授权

US5952687A Semiconductor memory device having a trench capacitor with lower electrode inside the trench 失效
标题翻译：具有沟槽电容器的半导体存储器件，其内部具有下部电极
公开(公告)号：US5952687A
公开(公告)日：1999-09-14
申请号：US889324
申请日：1997-07-08
申请人： Takashi Kawakubo , Kazuhiro Eguchi , Shuichi Komatsu , Kazuhide Abe
发明人： Takashi Kawakubo , Kazuhiro Eguchi , Shuichi Komatsu , Kazuhide Abe
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108 , H01L29/68
CPC分类号： H01L28/55 , H01L27/10808 , H01L28/91 , H01L27/10852 , Y10S148/014
摘要： A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.
摘要翻译：具有半导体衬底，设置在衬底上的绝缘层和存储单元的半导体存储器件。存储单元具有设置在基板上的开关晶体管和在绝缘层中形成的沟槽中的电荷存储元件。电荷存储元件具有下列顺序的底电极，电介质层和顶电极。

14. 发明授权

US5909389A Semiconductor memory device using ferroelectric capacitor 失效
标题翻译：使用铁电电容器的半导体存储器件
公开(公告)号：US5909389A
公开(公告)日：1999-06-01
申请号：US883600
申请日：1997-06-26
申请人： Takashi Kawakubo , Kazuhide Abe
发明人： Takashi Kawakubo , Kazuhide Abe
IPC分类号： G11C14/00 , G11C11/22 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11517 , H01L28/55
摘要： A semiconductor memory device has a plurality of memory cells arranged in a matrix format. Each memory cell includes a thin film capacitor with a ferroelectric film and a pair of electrodes opposing each other through the ferroelectric film, and a transfer gate MOS transistor arranged to be connected to the thin film capacitor. The operating voltage value corresponding to the central axis of the polarization hysteresis characteristic curve of the thin film capacitor shifts from 0V by Vf. When no write or read operation is performed for the memory cell, the transistor is turned on, and an adjustment voltage set to be from 0 to 2 Vf is constantly applied across the electrodes of the thin film capacitor.
摘要翻译：半导体存储器件具有以矩阵形式布置的多个存储单元。每个存储单元包括具有铁电膜的薄膜电容器和通过铁电体膜彼此相对的一对电极，以及布置成连接到薄膜电容器的传输门MOS晶体管。与薄膜电容器的极化滞后特性曲线的中心轴相对应的工作电压值从0V向Vf移动。当不对存储单元执行写入或读取操作时，晶体管导通，并且设置为0至2Vf的调整电压恒定地施加在薄膜电容器的电极之间。

15. 发明授权

US5760432A Thin film strained layer ferroelectric capacitors 失效
标题翻译：薄膜应变层铁电电容器
公开(公告)号：US5760432A
公开(公告)日：1998-06-02
申请号：US418299
申请日：1995-04-07
申请人： Kazuhide Abe , Shuichi Komatsu , Kazuhiro Eguchi , Takashi Kawakubo
发明人： Kazuhide Abe , Shuichi Komatsu , Kazuhiro Eguchi , Takashi Kawakubo
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/115 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/1085 , H01L28/55
摘要： A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.
摘要翻译：一种电容器，其具有外延沉积在电极表面上的第一电极和电介质材料，以在电极上形成电介质层。形成电介质层的电介质材料在该层中具有足够的显着改善介电特性的应变。第二电极放置在电介质层上。

16. 发明申请

US20120241877A1 ACOUSTIC SEMICONDUCTOR DEVICE 失效
标题翻译：声学半导体器件
公开(公告)号：US20120241877A1
公开(公告)日：2012-09-27
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

17. 发明授权

US07769352B2 Receiver and wireless communication apparatus 失效
标题翻译：接收机和无线通信设备
公开(公告)号：US07769352B2
公开(公告)日：2010-08-03
申请号：US11568365
申请日：2006-09-25
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： H04B1/40 , H04B7/00 , H04L27/22
CPC分类号： H04L27/2272 , H03C3/0966 , H03D3/242 , H04B1/38 , H04L27/2273 , H04L2027/0016 , H04L2027/0022 , H04L2027/0055 , H04W56/00 , H04W88/02 , Y02D70/1222 , Y02D70/40
摘要： A receiver has a first voltage control oscillator configured to generate a first oscillation signal, a second voltage control oscillator configured to generate a second oscillation signal having a first phase, a first phase comparator configured to detect a phase difference between the first and second oscillation signals, a demodulator configured to perform demodulation processing of the received signal and to generate timing information of a second phase included in the first oscillation signal, a second phase comparator configured to detect the phase difference between the first and second oscillation signals, and a first control voltage generator configured to generate a first control voltage for controlling a phase and a frequency of the second voltage control oscillator based on the phase difference detected by the second phase comparator.
摘要翻译：一种接收器具有：第一电压控制振荡器，被配置为产生第一振荡信号;第二压控振荡器，被配置为产生具有第一相位的第二振荡信号;第一相位比较器，被配置为检测第一和第二振荡信号之间的相位差; 解调器，被配置为执行所述接收信号的解调处理并生成包括在所述第一振荡信号中的第二相位的定时信息;第二相位比较器，被配置为检测所述第一和第二振荡信号之间的相位差;以及第一控制电压发生器被配置为基于由第二相位比较器检测的相位差产生用于控制第二压控振荡器的相位和频率的第一控制电压。

18. 发明授权

US07215066B2 Piezoelectric actuator and micro-electromechanical device 有权
标题翻译：压电致动器和微机电装置
公开(公告)号：US07215066B2
公开(公告)日：2007-05-08
申请号：US11196596
申请日：2005-08-04
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： H01L41/053
CPC分类号： H01H57/00 , H01G5/18 , H01G5/38 , H01H2057/006 , H01L41/094 , H01L41/0946 , H01L41/0953 , Y10S977/837
摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.
摘要翻译：压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

19. 发明申请

US20060055287A1 Piezoelectric actuator and micro-electromechanical device 有权
标题翻译：压电致动器和微机电装置
公开(公告)号：US20060055287A1
公开(公告)日：2006-03-16
申请号：US11196596
申请日：2005-08-04
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： H01L41/04
CPC分类号： H01H57/00 , H01G5/18 , H01G5/38 , H01H2057/006 , H01L41/094 , H01L41/0946 , H01L41/0953 , Y10S977/837
摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.
摘要翻译：压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

20. 发明授权

US06870446B2 High frequency filter 有权
标题翻译：高频滤波器
公开(公告)号：US06870446B2
公开(公告)日：2005-03-22
申请号：US10252105
申请日：2002-09-23
申请人： Ryoichi Ohara , Kazuhide Abe , Takashi Kawakubo , Hiroshi Yoshida , Hiroshi Tsurumi , Ryuichi Fujimoto
发明人： Ryoichi Ohara , Kazuhide Abe , Takashi Kawakubo , Hiroshi Yoshida , Hiroshi Tsurumi , Ryuichi Fujimoto
IPC分类号： H03H9/00 , H03H9/54 , H03H9/58 , H03H9/60
CPC分类号： H03H9/605 , H03H9/0095 , H03H9/542 , H03H9/581 , H03H2009/02196
摘要： A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonators connected in parallel. The resonance characteristic of at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonator connected in parallel is shifted by changing the voltage applied by the variable voltage circuit to change the pass characteristic of the filter.
摘要翻译：高频滤波器包括串联连接在输入/输出节点之间的薄膜压电谐振器，并联连接在输入/输出节点之间的薄膜压电谐振器和可变电压电路，可变电压电路适于改变施加到至少薄膜的电压串联连接的压电谐振器或并联连接的薄膜压电谐振器。串联连接的薄膜压电谐振器或并联连接的薄膜压电谐振器中的至少一个的谐振特性通过改变由可变电压电路施加的电压来改变滤波器的通过特性而被移位。

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