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11. 发明授权

US6057229A Method for metallizing submicron contact holes in semiconductor bodies 失效
标题翻译：在半导体器件中金属化亚微米接触孔的方法
公开(公告)号：US6057229A
公开(公告)日：2000-05-02
申请号：US828677
申请日：1997-03-31
申请人： Konrad Hieber , Helmuth Treichel , Heinrich Koerner
发明人： Konrad Hieber , Helmuth Treichel , Heinrich Koerner
IPC分类号： C23C16/06 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L29/45 , H01L21/4763
CPC分类号： H01L21/76865 , H01L21/76843 , H01L21/76877 , H01L23/485 , H01L29/456 , H01L2924/0002 , H01L2924/3011 , Y10S438/907 , Y10S438/908
摘要： Submicron contact holes in semiconductor bodies are metalized in a single operation. A titanium-rich layer is first deposited, which is followed by a low-resistance TiSi.sub.2 layer. The two layers are thus deposited in one contiguous CVD process inside a single CVD chamber.
摘要翻译：半导体体中的亚微米接触孔在一次操作中被金属化。首先沉积富钛层，其后是低电阻TiSi 2层。因此，这两层沉积在单个CVD室内的一个连续的CVD工艺中。

12. 发明授权

US4990365A Method for producing silicon boronitride layers 失效
标题翻译：硼氮化硼层的制造方法
公开(公告)号：US4990365A
公开(公告)日：1991-02-05
申请号：US367358
申请日：1989-06-16
申请人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
发明人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
IPC分类号： C23C16/30 , C23C16/44 , H01L21/31 , H01L21/316 , H01L21/56 , H01L23/29
CPC分类号： H01L21/56 , C23C16/30 , C23C16/44 , H01L23/291 , H01L2924/0002
摘要： To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 .epsilon..sub.o and are distinguished by good insulating and blocking properties and by a high break down strength.
摘要翻译：为了产生用作金属间化层和/或作为最终钝化层的氮化硼层，本发明提供了一种方法，其中已经分子含有要生产的硼氮化硼层的目标组成的一部分的流体初始化合物被利用，并通过化学气相沉积在交变电磁场中沉积。以这种方式制造的硼氮化硼层具有低于4εo的介电常数，并且具有良好的绝缘和阻挡特性以及高的断裂强度。

13. 发明申请

US20120129344A1 PROCESS AND APPARATUS FOR REMOVAL OF CONTAMINATING MATERIAL FROM SUBSTRATES 审中-公开
标题翻译：从基板上去除污染材料的工艺和装置
公开(公告)号：US20120129344A1
公开(公告)日：2012-05-24
申请号：US13263639
申请日：2010-04-08
申请人： Helmuth Treichel , Dave Bohling , Jeffrey Farber
发明人： Helmuth Treichel , Dave Bohling , Jeffrey Farber
IPC分类号： H01L21/306 , C11D7/60
CPC分类号： C11D11/0047 , C11D7/3245
摘要： A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical properties of an insulator or semiconductor substrate. The process includes the exposure of the substrate to an aqueous solution of at least one compound of the formula: (I) where n in each occurrence is independently an integer value between 0 and 6, and X is independently in each occurrence H, NR4, Li, Na or K and at least one of X is NR4; where R in each occurrence is independently H or C1-C6 alkyl, to improve electrical performance of the substrate. A kit for preparing such a solution includes a 1-20 total weight percent aqueous concentrate of at least one compound of formula (I). The kit also provides instructions for the dilution of the concentrate to form the solution.
摘要翻译：提供了从基板去除污染金属以改善电性能的方法。已知多阳离子金属对绝缘体或半导体衬底的电性能特别有害。该方法包括将底物暴露于至少一种下式化合物的水溶液：（I）其中每次出现的n独立地为0至6之间的整数，X在每次出现时独立地为H，NR4， Li，Na或K，X中的至少一个为NR 4; 其中每次出现的R独立地为H或C 1 -C 6烷基，以改善基材的电性能。用于制备这种溶液的试剂盒包括1-20重量％的至少一种式（I）化合物的总重量百分比含水浓缩物。该试剂盒还提供稀释浓缩物以形成溶液的说明书。

14. 发明申请

US20120111361A1 METHOD FOR SUBSTRATE SURFACE CLEANING 审中-公开
标题翻译：基板表面清洗方法
公开(公告)号：US20120111361A1
公开(公告)日：2012-05-10
申请号：US13041166
申请日：2011-03-04
申请人： Helmuth Treichel , Flint Thorne , Rito Ligutom , Jim Swertel
发明人： Helmuth Treichel , Flint Thorne , Rito Ligutom , Jim Swertel
IPC分类号： B08B7/00 , B24B1/00
CPC分类号： B08B1/02 , A46B13/001 , A46B2200/3086 , B08B1/04 , H01L21/67046 , H01L21/67219
摘要： A method for cleaning and polishing a disk is provided. The method includes planarizing the disk and transferring the planarized disk to a first station of a polishing module. At the first station opposing sides of the disk are simultaneously polished as the disk rotates around an axis of the disk. The polishing includes continuously advancing a first polishing member contacting a first surface of the disk and a second polishing member contacting a second surface of the disk, wherein the advancing of the first polishing member independent of the advancing of the second polishing member. The method includes transferring the disk to a second station of the polishing module.
摘要翻译：提供了一种清洁和抛光盘的方法。该方法包括平坦化盘并将平坦化的盘传送到抛光模块的第一站。当盘绕盘的轴线旋转时，在盘的相对侧的第一站同时抛光。抛光包括连续前进接触盘的第一表面的第一抛光构件和与盘的第二表面接触的第二抛光构件，其中第一抛光构件的前进与第二抛光构件的前进无关。该方法包括将光盘传送到抛光模块的第二站。

15. 发明申请

US20080038486A1 Radical Assisted Batch Film Deposition 审中-公开
标题翻译：激光辅助分批膜沉积
公开(公告)号：US20080038486A1
公开(公告)日：2008-02-14
申请号：US11833027
申请日：2007-08-02
申请人： Helmuth Treichel , Taiqing Qiu , Robert Jeffrey Bailey
发明人： Helmuth Treichel , Taiqing Qiu , Robert Jeffrey Bailey
IPC分类号： C23C16/00
CPC分类号： C23C16/401 , C23C16/4488 , C23C16/45578
摘要： A process for radical assisted film deposition simultaneously on multiple wafer substrates is provided. The multiple wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant. A high degree of wafer-to-wafer uniformity among the multiple wafer substrates is obtained by introducing the reactants through elongated vertical tube injectors having vertically displaced orifices, injectors surrounded by a liner having vertically displaced exhaust ports to impart across flow of movement of reactants simultaneously across the multiple wafer substrates. With molecular oxygen as a stable species source of oxide, and hydrogen as the in situ radical generating reactant, oxide films of silicon are readily produced with a silicon-containing precursor introduced into the reactor.
摘要翻译：提供了一种在多个晶片基板上同时进行自由基辅助膜沉积的工艺。将多个晶片衬底装载到加热到所需膜沉积温度的反应器中。将氧化物或氮化物抗衡离子的稳定物质源引入反应器。原位产生自由基的反应物也与阳离子离子沉积源一起引入反应器。引入阳离子离子沉积源足以在多个晶片衬底上同时沉积阳离子氧化物或阳离子氮化物膜的时间。沉积温度低于常规化学气相沉积温度，不存在原位产生自由基的反应物。通过将具有垂直移位的孔的细长垂直管喷射器引入反应物，由具有垂直移位的排气口的衬套围绕的喷射器同时施加反应物的运动流动，可以获得多个晶片与晶片之间的高度的均匀性跨越多个晶片衬底。以分子氧作为氧化物的稳定物质来源，氢作为原位产生自由基的反应物，硅的氧化膜容易地被引入到反应器中的含硅前体产生。

16. 发明申请

US20070031598A1 Method for depositing silicon-containing films 审中-公开
标题翻译：沉积含硅膜的方法
公开(公告)号：US20070031598A1
公开(公告)日：2007-02-08
申请号：US11482782
申请日：2006-07-07
申请人： Yoshikazu Okuyama , Jon Owyang , Helmuth Treichel
发明人： Yoshikazu Okuyama , Jon Owyang , Helmuth Treichel
IPC分类号： C23C16/00
CPC分类号： C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/45525 , C23C16/45546 , C23C16/45553 , C23C16/45578 , C23C16/4584
摘要： Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550° C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as within process chambers adapted to contain a plurality of substrates, where the silylamine moieties are conveyed to the chambers in across flow type manner.
摘要翻译：公开了使用甲硅烷基部分形成含硅膜的方法。在一些实施方案中，使用甲硅烷基胺部分在低于550℃的温度下沉积硅 - 氮，硅 - 氧或硅 - 氮 - 氧材料。在一些实施方案中，在适于包含单个基材的处理室内实施方法以及在适于容纳多个基底的处理室内，其中甲硅烷基胺部分以跨流动方式输送到室。

17. 发明授权

US06261407B1 Method and apparatus for removal of thin films from wafers 有权
标题翻译：从晶圆上去除薄膜的方法和装置
公开(公告)号：US06261407B1
公开(公告)日：2001-07-17
申请号：US09342333
申请日：1999-06-29
申请人： Helmuth Treichel , Michael Ravkin , Don Anderson , John M. de Larios
发明人： Helmuth Treichel , Michael Ravkin , Don Anderson , John M. de Larios
IPC分类号： C23C1600
CPC分类号： H01L21/67126 , H01L21/67075
摘要： A method and apparatus for processing a wafer are described. In one embodiment, a method for processing a wafer comprises applying a sealing mechanism to the wafer to create multiple separate, sealed portions of the wafer, and applying a plurality of different chemistries to multiple separate, sealed portions of the wafer through the sealing mechanism.
摘要翻译：描述了一种用于处理晶片的方法和装置。在一个实施例中，一种用于处理晶片的方法包括向晶片施加密封机构以产生晶片的多个分离的密封部分，以及通过密封机构将多个不同的化学物质施加到晶片的多个分离的密封部分。

18. 发明申请

US20100117203A1 OXIDE-CONTAINING FILM FORMED FROM SILICON 审中-公开
标题翻译：含硅氧化膜
公开(公告)号：US20100117203A1
公开(公告)日：2010-05-13
申请号：US11668626
申请日：2007-01-30
申请人： Robert Jeffrey Bailey , Hood Chatham , Derrick Foster , Olivier Laparra , Martin Mogaard , Cole Porter , Taiquing T. Qiu , Helmuth Treichel
发明人： Robert Jeffrey Bailey , Hood Chatham , Derrick Foster , Olivier Laparra , Martin Mogaard , Cole Porter , Taiquing T. Qiu , Helmuth Treichel
IPC分类号： H01L29/04 , H01L21/316 , H01L21/26 , H01L21/314
CPC分类号： C30B33/005 , C30B29/06 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02255 , H01L21/02326 , H01L21/3144 , H01L21/31612 , H01L21/67109
摘要： A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.
摘要翻译：提供了一种从硅形成含氧化物的膜的方法，其包括将硅衬底加热至250℃至1100℃的工艺温度，同时进入双原子还原源气体ZZ'的处理室，其中Z和 Z'分别为H，D和T以及稳定的氧化物离子源。沿着处理室的垂直范围存在多个排气口以在流动上产生反应物。提供了一批具有多个硅基层的硅衬底，每个硅基层具有暴露的110和100平面，并且在低于600℃的温度下形成与膜相关的膜残余应力。并且在<100>结晶平面上具有超过100薄膜厚度的<110>薄膜厚度小于20％，或薄膜特征为厚度各向异性小于18％，电击穿场大于10.5MV /厘米。

19. 发明申请

US20070160756A1 Apparatus and method for the deposition of ruthenium containing films 审中-公开
标题翻译：用于沉积含钌膜的装置和方法
公开(公告)号：US20070160756A1
公开(公告)日：2007-07-12
申请号：US11326707
申请日：2006-01-07
申请人： Helmuth Treichel
发明人： Helmuth Treichel
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/45578
摘要： The present invention provides a method for depositing a ruthenium metal compound containing film on one or more substrates. The desired metal compound is first dissolved in a suitable solvent. The precursor mixture is then vaporized and delivered to a process chamber to be used in the deposition of the metal compound on the substrates by process methods comprising CVD, MOCVD, ALD, and the like. This method results in the deposition of high quality, substantially uniform films. Additionally, the method makes efficient use of the metal compound component and reduces the cost for the deposition of the metal compound.
摘要翻译：本发明提供一种在一个或多个基底上沉积含钌金属化合物的膜的方法。首先将所需的金属化合物溶解在合适的溶剂中。然后将前体混合物蒸发并输送到处理室，以用于通过包括CVD，MOCVD，ALD等的工艺方法将金属化合物沉积在基板上。这种方法导致沉积高质量，基本均匀的膜。另外，该方法有效地利用了金属化合物成分，降低了沉积金属化合物的成本。

20. 发明授权

US06693043B1 Method for removing photoresist from low-k films in a downstream plasma system 有权
标题翻译：在下游等离子体系中从低k膜去除光致抗蚀剂的方法
公开(公告)号：US06693043B1
公开(公告)日：2004-02-17
申请号：US10251178
申请日：2002-09-20
申请人： Senzi Li , Helmuth Treichel , Kirk Ostrowski , Chevan Goonetilleke , Jim Su , David L. Chen
发明人： Senzi Li , Helmuth Treichel , Kirk Ostrowski , Chevan Goonetilleke , Jim Su , David L. Chen
IPC分类号： H01L21302
CPC分类号： H01J37/32357 , G03F7/427 , H01J2237/3342 , H01L21/31138 , H01L21/76802
摘要： A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.
摘要翻译：描述了使用下游等离子体系统的独特的光刻胶条序列。该序列可以包括单独的RF定向等离子体，单独的下游等离子体或将RF等离子体和下游等离子体组合在一起。工艺顺序可以是单步或多步，其在保持膜的介电性能的同时产生高剥离速率。该过程可以是在低温和低压下进行的氧化过程，这降低了氧与低k膜的反应性。此外，通过将少量的添加气体如含氟气体加入到等离子体中，去除来自带材加工的无机残留物，留下清洁的光致抗蚀剂和残留物的薄膜。

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