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1. 发明授权

US06551902B1 Process for fabricating a buried, laterally insulated zone of increased conductivity in a semiconductor substrate 失效
标题翻译：用于制造半导体衬底中具有增加的导电性的掩埋横向绝缘区的方法
公开(公告)号：US06551902B1
公开(公告)日：2003-04-22
申请号：US09237174
申请日：1999-01-25
申请人： Norbert Elbel , Zvonimir Gabric , Bernhard Neureither
发明人： Norbert Elbel , Zvonimir Gabric , Bernhard Neureither
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.
摘要翻译：在半导体衬底中制造增加导电性的横向绝缘掩埋区。首先，在具有增加的导电性的掩埋区的衬底上形成参考层。然后将参考层图案化。在衬底中产生沟槽，并且用于填充沟槽的绝缘材料被施加到由此产生的结构上。由此形成平坦的表面，因为沟槽中的生长速度快于与沟槽相邻的参考层上的生长速率。这里，参考层被选择为使得参考层上的绝缘材料的生长速率至少比要覆盖的沟槽表面上的绝缘材料的生长速率小2倍。待覆盖的沟槽表面通常由基底材料构成。然而，也可以提供中间层。

2. 发明授权

US5629053A Method for manufacturing microcrystalline cubic boron-nitride-layers 失效
标题翻译：微晶立方氮化硼层的制造方法
公开(公告)号：US5629053A
公开(公告)日：1997-05-13
申请号：US681131
申请日：1991-04-05
申请人： Helmuth Treichel , Oswald Spindler , Rainer Braun , Bernhard Neureither , Thomas Kruck
发明人： Helmuth Treichel , Oswald Spindler , Rainer Braun , Bernhard Neureither , Thomas Kruck
IPC分类号： C23C16/34 , C23C16/50
CPC分类号： C23C16/342
摘要： The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500.degree. C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.
摘要翻译：本发明的方法以简单的方式提供了适用于VLSI电路中的绝缘层的微晶立方结构的氮化硼层的沉积，x射线光刻中的掩模膜以及涂覆硬物质。由于在一分子中使用已经含有硼和氮的优选的起始物质，优选为液体或固体，并且使用等离子体CVD法，可以在低于500℃的温度下进行。起始物质的激发优选以感应或电容方式在中空阴极中进行。

3. 发明授权

US4990365A Method for producing silicon boronitride layers 失效
标题翻译：硼氮化硼层的制造方法
公开(公告)号：US4990365A
公开(公告)日：1991-02-05
申请号：US367358
申请日：1989-06-16
申请人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
发明人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
IPC分类号： C23C16/30 , C23C16/44 , H01L21/31 , H01L21/316 , H01L21/56 , H01L23/29
CPC分类号： H01L21/56 , C23C16/30 , C23C16/44 , H01L23/291 , H01L2924/0002
摘要： To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 .epsilon..sub.o and are distinguished by good insulating and blocking properties and by a high break down strength.
摘要翻译：为了产生用作金属间化层和/或作为最终钝化层的氮化硼层，本发明提供了一种方法，其中已经分子含有要生产的硼氮化硼层的目标组成的一部分的流体初始化合物被利用，并通过化学气相沉积在交变电磁场中沉积。以这种方式制造的硼氮化硼层具有低于4εo的介电常数，并且具有良好的绝缘和阻挡特性以及高的断裂强度。

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