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11. 发明申请

US20060032585A1 Plasma processing method and apparatus 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060032585A1
公开(公告)日：2006-02-16
申请号：US11198182
申请日：2005-08-08
申请人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
发明人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31122 , H01L21/31116
摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.
摘要翻译：使用选自Ar气体，He气体，Ar + He混合气体的气体和通过混合CH形成的混合气体，用气体等离子体蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，在保持40℃或更高温度的同时保持高的蚀刻选择比，从而确保HfO 2膜32和多晶硅层33之间的高蚀刻选择比，衬底Si层31和SiO 2掩模34，在HfO 3的等离子体蚀刻期间减少衬底Si层31的损耗量和多晶硅栅极部分33的侧壁的侧蚀刻， SUB> 2 。

12. 发明申请

US20050014380A1 Plasma processing method and apparatus 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050014380A1
公开(公告)日：2005-01-20
申请号：US10650841
申请日：2003-08-29
申请人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
发明人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/31122 , H01L21/31116
摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.
摘要翻译：使用选自Ar气体，He气体，Ar + He混合气体的气体和通过将CH 4与前述气体混合形成的混合气体，使用气体等离子体来蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，同时保持温度 40℃以上，因此确保HfO 2膜32与Poly-Si层33，基板Si层31和SiO 2掩模34之间的高蚀刻选择比，减少基板Si层31和侧面的损耗量在HfO 2的等离子体蚀刻期间蚀刻多晶硅栅极部分33的侧壁。

13. 发明申请

US20090065145A1 Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table 审中-公开
标题翻译：等离子体处理装置和能够调节样品表内温度的方法
公开(公告)号：US20090065145A1
公开(公告)日：2009-03-12
申请号：US12267813
申请日：2008-11-10
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

14. 发明申请

US20080210376A1 PLASMA PROCESSING APPARATUS CAPABLE OF CONTROLLING PLASMA EMISSION INTENSITY 失效
标题翻译：能够控制等离子体排放强度的等离子体处理装置
公开(公告)号：US20080210376A1
公开(公告)日：2008-09-04
申请号：US12105018
申请日：2008-04-17
申请人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/02 , C23C16/513
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译：具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。

15. 发明申请

US20070232085A1 Method and apparatus for plasma processing 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20070232085A1
公开(公告)日：2007-10-04
申请号：US11802955
申请日：2007-05-29
申请人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
发明人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
IPC分类号： H01L21/00
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译：本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理以及聚焦环上方的鞘 - 等离子体界面。聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差形成在晶片表面上。通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

16. 发明申请

US20060196605A1 Method and apparatus for plasma processing 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196605A1
公开(公告)日：2006-09-07
申请号：US11190839
申请日：2005-07-28
申请人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
发明人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32935
摘要： In processing a semiconductor device, foreign particles that may cause defects are reduced to improve production yield without decreasing availability of a semiconductor manufacturing apparatus. The apparatus comprises a mechanism operable to control an ion sheath 32w on an electrode 14 for mounting a wafer 2 and an ion sheath 32f on a member 141 mounted on the periphery of the electrode 14. The thickness of the ion sheath 32f is made smaller than the thickness of the ion sheath 32w to provide a slope of ion sheath 32s near the edge of the wafer 2, thereby causing ions 31 to be obliquely incident on the wafer edge to reduce deposition film on the wafer edge.
摘要翻译：在半导体器件的处理中，可能引起缺陷的异物会降低，从而提高生产率而不降低半导体制造装置的可用性。该装置包括一个可操作的机构，用于控制电极14上的离子鞘32w，用于将晶片2和离子鞘32f安装在安装在电极14周围的构件141上。离子鞘32f的厚度为使离子鞘32 w的厚度小于晶片2的边缘附近的离子鞘32 s的斜率，从而使离子31倾斜入射在晶片边缘上，以减少晶片边缘上的沉积膜。

17. 发明申请

US20060169410A1 Plasma processing apparatus capable of controlling plasma emission intensity 审中-公开
标题翻译：能够控制等离子体发射强度的等离子体处理装置
公开(公告)号：US20060169410A1
公开(公告)日：2006-08-03
申请号：US11065078
申请日：2005-02-25
申请人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译：具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。

18. 发明授权

US5320707A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5320707A
公开(公告)日：1994-06-14
申请号：US63983
申请日：1993-05-20
申请人： Tadamitsu Kanekiyo , Hironobu Kawahara , Yoshiaki Sato , Kotaro Fujimoto
发明人： Tadamitsu Kanekiyo , Hironobu Kawahara , Yoshiaki Sato , Kotaro Fujimoto
IPC分类号： H01L21/302 , C23F4/00 , H01J37/18 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/304 , H01L21/3065 , H01L21/3213 , H01L21/677
CPC分类号： H01L21/67161 , C23F4/00 , H01J37/185 , H01L21/32136 , H01L21/67017 , H01L21/67069 , H01L21/67167 , H01L21/67207 , H01L21/67745 , H01L21/67748 , H01L21/67751
摘要： Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed from a gas mixture containing a halogen system gas (e.g., Cl.sub.2, HBr, BCl.sub.3, etc.) and a ROH gas (e.g., CH.sub.3 OH, C.sub.3 H.sub.5 OH, C.sub.5 H.sub.7 OH, CH.sub.3 COOH, HOCH.sub.2 CH.sub.2 OH, etc.). By incorporating the ROH gas with the halogen system gas, in etching, e.g., an aluminum system film structure, etching can be performed with an accurate shape corresponding to a mask pattern, irrespective of the pattern density. Moreover, the aluminum system film structure can be etched at a uniform speed irrespective of the pattern density; and a selection ratio for etching the aluminum system film structure, as compared with etching material (e.g., organic resist) of the mask, is improved.
摘要翻译：公开了一种干蚀刻具有要蚀刻的铝系膜膜结构的样品（例如，晶片）的方法。在等离子体中在减压下进行蚀刻，等离子体由含有卤素系气体（例如Cl 2，HBr，BCl 3等）和ROH气体（例如CH 3 OH，C 3 H 5 OH，C 5 H 7 OH，CH 3 COOH）的气体混合物形成，HOCH2CH2OH等）。通过将ROH气体与卤素系统气体结合，在蚀刻中，例如铝系膜膜结构，可以以对应于掩模图案的精确形状进行蚀刻，而与图案密度无关。此外，铝系统膜结构可以以均匀的速度被蚀刻，而不管图案密度如何; 并且与掩模的蚀刻材料（例如有机抗蚀剂）相比，蚀刻铝系膜膜结构的选择比提高。

19. 发明授权

US08397668B2 Plasma processing apparatus 有权
公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

20. 发明申请

US20100163187A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100163187A1
公开(公告)日：2010-07-01
申请号：US12392237
申请日：2009-02-25
申请人： Kenetsu Yokogawa , Takamasa Ichino , Kazuyuki Hirozane , Tadamitsu Kanekiyo
发明人： Kenetsu Yokogawa , Takamasa Ichino , Kazuyuki Hirozane , Tadamitsu Kanekiyo
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/3244
摘要： A plasma processing apparatus includes a vacuum chamber, a sample table that places the sample in the vacuum chamber, and a gas supply unit faced to the sample table and having a gas supply surface with a diameter larger than that of the sample, wherein gas injection holes each having identical diameter are provided concentrically on the gas supply surface, a hole number density of the gas injection holes present in an outer diameter position of the sample or in an outside of the outer diameter position is made higher than that of the gas injection holes present inside the outer diameter position of the sample, and a diameter of the gas injection holes present in the outer diameter position of the sample or in the outside from the outer diameter position is larger than that of the gas injection holes present inside the diameter of the sample.
摘要翻译：等离子体处理装置包括真空室，将样品放置在真空室中的样品台和面向样品台的气体供给单元，其具有直径大于样品的气体供给表面，其中气体注入在气体供给面同心地设置具有相同直径的孔，使得存在于样品的外径位置或外径位置的外部的气体注入孔的孔数密度高于气体注入存在于样品的外径位置的孔，并且存在于样品的外径位置或外部位于外径位置的气体注入孔的直径大于存在于直径内的气体注入孔的直径的样品。

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