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11. 发明授权

US09001308B2 Pattern generator for a lithography system 有权
标题翻译：光刻系统的图案发生器
公开(公告)号：US09001308B2
公开(公告)日：2015-04-07
申请号：US13757477
申请日：2013-02-01
申请人： Chen-Hua Yu , Tien-I Bao , Chih Wei Lu , Jaw-Jung Shin , Shy-Jay Lin , Burn Jeng Lin
发明人： Chen-Hua Yu , Tien-I Bao , Chih Wei Lu , Jaw-Jung Shin , Shy-Jay Lin , Burn Jeng Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/702 , H01J37/00 , H01J37/3174 , H01J37/3177 , H01J2237/0435 , H01J2237/31789
摘要： A pattern generator includes a minor array plate having a mirror, at least one electrode plate disposed over the minor array plate, a lens let disposed over the minor, and at least one insulator layer sandwiched between the mirror array plate and the electrode plate. The electrode plate includes a first conducting layer and a second conducting layer. The lens let has a non-straight sidewall formed in the electrode plate. The pattern generator further includes at least one insulator sandwiched between two electrode plates. The non-straight sidewall can be a U-shaped sidewall or an L-shaped sidewall.
摘要翻译：图案发生器包括具有反射镜的次阵列板，设置在次阵列板上的至少一个电极板，设置在副镜上的透镜，以及夹在反射镜阵列板和电极板之间的至少一个绝缘体层。电极板包括第一导电层和第二导电层。透镜让具有形成在电极板中的非直的侧壁。图案发生器还包括夹在两个电极板之间的至少一个绝缘体。非直的侧壁可以是U形侧壁或L形侧壁。

12. 发明授权

US08464186B2 Providing electron beam proximity effect correction by simulating write operations of polygonal shapes 有权
标题翻译：通过模拟多边形的写入操作提供电子束邻近效应校正
公开(公告)号：US08464186B2
公开(公告)日：2013-06-11
申请号：US13011165
申请日：2011-01-21
申请人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G03F1/144 , G03F1/78 , G03F7/70283 , G03F7/70441 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01L21/0274 , H01L21/0275
摘要： A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
摘要翻译：使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。第一多边形形状占据第一虚拟层并且包括第一组像素。该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。第二多边形形状占据第二虚拟层。该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

13. 发明授权

US08378319B2 System and method for generating direct-write pattern 有权
标题翻译：用于生成直写模式的系统和方法
公开(公告)号：US08378319B2
公开(公告)日：2013-02-19
申请号：US12728655
申请日：2010-03-22
申请人： Faruk Krecinic , Shy-Jay Lin , Jeng-Horng Chen , Shih-Ming Chang , Tuane Ying Fang , Wei-Long Wang , Chien-Hsun Chen
发明人： Faruk Krecinic , Shy-Jay Lin , Jeng-Horng Chen , Shih-Ming Chang , Tuane Ying Fang , Wei-Long Wang , Chien-Hsun Chen
IPC分类号： G09G5/39 , H01J37/00
CPC分类号： G03F7/70291 , G03F7/70508
摘要： A direct-write system is provided which includes a stage for holding a substrate, a processing module for processing pattern data and generating instructions associated with the pattern data, and an exposure module that includes beams that are focused onto the substrate and a beam controller that controls the beams in accordance with the instructions. The processing module includes vertex pair processors each having bit inverters. Each vertex pair processor is operable to process a respective vertex pair of an input scan line to generate an output scan line. Each bit inverter is operable to invert a respective input bit of the input scan line to generate a respective output bit of the output scan line if a bit position is located between the respective vertex pair, otherwise the respective input bit is copied to the respective output bit. The instructions correspond to the output bits for each beam.
摘要翻译：提供了一种直写式系统，其包括用于保持基板的台，用于处理图案数据和产生与图案数据相关联的指令的处理模块，以及包括聚焦在基板上的光束的曝光模块和一个光束控制器，根据说明控制光束。处理模块包括各自具有位逆变器的顶点对处理器。每个顶点对处理器可操作以处理输入扫描线的相应顶点对以产生输出扫描线。如果比特位置位于相应顶点对之间，则每个位反相器可操作以反转输入扫描线的相应输入位以产生输出扫描线的相应输出位，否则相应的输入位被复制到相应的输出位。这些指令对应于每个波束的输出位。

14. 发明申请

US20120235063A1 Systems and Methods Providing Electron Beam Writing to a Medium 有权
标题翻译：提供电子束写入介质的系统和方法
公开(公告)号：US20120235063A1
公开(公告)日：2012-09-20
申请号：US13051507
申请日：2011-03-18
申请人： Wen-Chuan Wang , Shy-Jay Lin , Jaw-Jung Shin , Burn Jeng Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G21K5/00
CPC分类号： G03F7/2059 , B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/317 , H01J37/3177 , H01J2237/31761 , H01J2237/31774
摘要： A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams.
摘要翻译：用于电子束写入介质的方法包括将介质定位在电子束写入机内，使得介质由载物台支撑并暴露于电子束源。该方法还包括使用电子束源的多个可独立控制的光束将介质写入介质，其中图案包括多个平行条带。使用多个可独立控制的光束来写入每个平行条带。

15. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

16. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

17. 发明申请

US20080195243A1 Method and System for Improving Critical Dimension Uniformity 有权
标题翻译：改进关键尺寸均匀性的方法与系统
公开(公告)号：US20080195243A1
公开(公告)日：2008-08-14
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

18. 发明授权

US6007324A Double layer method for fabricating a rim type attenuating phase shifting mask 有权
标题翻译：用于制造边缘型衰减相移掩模的双层方法
公开(公告)号：US6007324A
公开(公告)日：1999-12-28
申请号：US166392
申请日：1998-10-05
申请人： San-De Tzu , Shy-Jay Lin , Ching-Chia Lin
发明人： San-De Tzu , Shy-Jay Lin , Ching-Chia Lin
IPC分类号： G03F1/29 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F7/203
摘要： A method of forming a rim type attenuating phase shifting mask which requires only one resist layer and developing the resist using a single developing solution. A transparent mask substrate has a layer of attenuating phase shifting material, a layer of opaque material, and a layer of resist material formed thereon. The layer of resist is exposed to a first pattern using a first exposure dose and a second pattern using a smaller second exposure dose. The resist is developed for a first time forming the first pattern in the entire layer of resist and the second pattern in the top portion of the layer of resist. The first pattern is then etched in the layer of opaque material using the first pattern in the layer of resist as a mask. In one embodiment the first pattern is then etched in the layer of attenuating phase shifting material, the resist is partially etched using an O.sub.2 plasma etch leaving the second pattern in the lower part of the resist, the second pattern is etched in the layer of opaque material, and the resist is stripped. In a second embodiment the layer of resist is developed for a second time in the same solution forming the second pattern in the entire resist layer, the first pattern is etched in the layer of attenuating phase shifting material, the second pattern is etched in the layer of opaque material, and the resist is stripped.
摘要翻译：一种形成仅需一个抗蚀剂层并使用单一显影液显影抗蚀剂的边缘型衰减相移掩模的方法。透明掩模基板具有衰减相移材料层，不透明材料层和形成在其上的抗蚀材料层。使用较小的第二曝光剂量，使用第一曝光剂量和第二图案将抗蚀剂层暴露于第一图案。抗蚀剂首次在抗蚀剂的整个层中形成第一图案，并且在抗蚀剂层的顶部形成第二图案。然后使用抗蚀剂层中的第一图案作为掩模，在不透明材料层中蚀刻第一图案。在一个实施例中，然后在衰减相移材料层中蚀刻第一图案，使用等离子体蚀刻部分蚀刻抗蚀剂，留下抗蚀剂下部的第二图案，第二图案被蚀刻在不透明层中材料，抗蚀剂剥离。在第二实施例中，抗蚀剂层在形成整个抗蚀剂层中的第二图案的相同溶液中第二次显影，第一图案在衰减相移材料层中被蚀刻，第二图案在层中被蚀刻的不透明材料，并且抗蚀剂被剥离。

19. 发明申请

US20130232455A1 ERROR DIFFUSION AND GRID SHIFT IN LITHOGRAPHY 有权
标题翻译：误差扩展和网格移位在LITHOGRAPHY
公开(公告)号：US20130232455A1
公开(公告)日：2013-09-05
申请号：US13409765
申请日：2012-03-01
申请人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
发明人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The present disclosure involves a method of data preparation in lithography processes. The method of data preparation includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, and converting the IC layout design GDS grid to a second exposure grid by applying an error diffusion and a grid shift technique to a sub-pixel exposure grid.
摘要翻译：本公开涉及在光刻工艺中的数据准备方法。数据准备的方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，并且通过向第二曝光网格应用误差扩散和网格移位技术将IC布局设计GDS网格转换为第二曝光网格子像素曝光网格。

20. 发明申请

US20130232453A1 NON-DIRECTIONAL DITHERING METHODS 有权
标题翻译：非方向抖动方法
公开(公告)号：US20130232453A1
公开(公告)日：2013-09-05
申请号：US13409653
申请日：2012-03-01
申请人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
发明人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G03F7/00 , G03F1/00 , G03F7/70433 , G06F17/5081 , G06F19/00 , G21K5/00
摘要： A method of data preparation in lithography processes is described. The method includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, converting the IC layout design GDS grid to a first exposure grid, applying a non-directional dither technique to the first exposure, coincident with applying dithering to the first expose grid, applying a grid shift to the first exposure grid to generate a grid-shifted exposure grid and applying a dither to the grid-shifted exposure grid, and adding the first exposure grid (after receiving dithering) to the grid-shifted exposure grid (after receiving dithering) to generate a second exposure grid.
摘要翻译：描述了光刻工艺中数据准备的方法。该方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，将IC布局设计GDS网格转换为第一曝光网格，将非定向抖动技术应用于第一曝光，与应用将第一曝光栅格抖动到第一曝光栅格，将栅格移位施加到第一曝光栅格以产生栅格移动的曝光栅格并向栅格曝光栅格施加抖动，并将第一曝光栅格（在接收抖动之后）添加到栅格转换曝光网格（在接收到抖动之后）以产生第二曝光网格。

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