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11. 发明授权

US07320734B2 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：等离子体浸没离子注入系统，其包括具有低解离和低最小等离子体电压的等离子体源
公开(公告)号：US07320734B2
公开(公告)日：2008-01-22
申请号：US10646527
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321
摘要： A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.
摘要翻译：一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽路径延伸穿过管道并跨越过程区域。反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体在房间里该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

12. 发明授权

US07312148B2 Copper barrier reflow process employing high speed optical annealing 失效
标题翻译：铜屏障回流工艺采用高速光学退火
公开(公告)号：US07312148B2
公开(公告)日：2007-12-25
申请号：US11199570
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
摘要翻译：在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线薄膜结构在横向于光线的方向上。

13. 发明申请

US20070287301A1 METHOD TO MINIMIZE WET ETCH UNDERCUTS AND PROVIDE PORE SEALING OF EXTREME LOW K (K<2.5) DIELECTRICS 审中-公开
标题翻译：最小化蚀刻深度并提供极低K（K <2.5）电介质的密封的方法
公开(公告)号：US20070287301A1
公开(公告)日：2007-12-13
申请号：US11694856
申请日：2007-03-30
申请人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
发明人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
IPC分类号： H01L21/312
CPC分类号： C23C16/308 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.
摘要翻译：提供了在基板上处理膜的方法。在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层，在从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。

14. 发明授权

US07292428B2 Electrostatic chuck with smart lift-pin mechanism for a plasma reactor 有权
标题翻译：用于等离子体反应器的具有智能举升机构的静电卡盘
公开(公告)号：US07292428B2
公开(公告)日：2007-11-06
申请号：US11115951
申请日：2005-04-26
申请人： Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
发明人： Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
IPC分类号： H02N13/00
CPC分类号： H01L21/68742 , H01L21/6831
摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer. A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.
摘要翻译：用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。升降台面向销的底端，并可在与升降方向大致平行的方向上平移。小的力检测器感测由提升销施加的足够大的力以指示夹紧的晶片并且足够小以避免使晶片脱扣。大的力检测器感测由提升销施加的力在足以脱离晶片的范围内。

15. 发明申请

US20070032082A1 Semiconductor substrate process using an optically writable carbon-containing mask 有权
标题翻译：使用可光学写入的含碳掩模的半导体衬底工艺
公开(公告)号：US20070032082A1
公开(公告)日：2007-02-08
申请号：US11199592
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/302
CPC分类号： H01L21/0332 , G03F1/54 , G03F1/68 , G03F7/202 , H01L21/3081 , H01L21/3086
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.
摘要翻译：一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层（a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光具有与书写光不同的特征。

16. 发明申请

US20060272772A1 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 有权
标题翻译：真空反应室与X灯加热器
公开(公告)号：US20060272772A1
公开(公告)日：2006-12-07
申请号：US11425974
申请日：2006-06-22
申请人： Amir Al-Bayati , Lester D'Cruz , Alexandros Demos , Dale Dubois , Khaled Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Rocha-Alvarez , Ashish Shah , Takashi Shimizu
发明人： Amir Al-Bayati , Lester D'Cruz , Alexandros Demos , Dale Dubois , Khaled Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Rocha-Alvarez , Ashish Shah , Takashi Shimizu
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

17. 发明授权

US07109098B1 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing 失效
标题翻译：半导体结形成工艺包括光吸收层的低温等离子体沉积和高速光学退火
公开(公告)号：US07109098B1
公开(公告)日：2006-09-19
申请号：US11131904
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/26
CPC分类号： H01L21/268 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/02321 , H01L21/26513 , H01L21/3127 , H01L21/314 , H01L21/3146
摘要： A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
摘要翻译：在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

18. 发明授权

US07037813B2 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 失效
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07037813B2
公开(公告)日：2006-05-02
申请号：US10646612
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/04 , H01L21/84
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域，并且将包括待植入物种的工艺气体引入到工件的表面层中。该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

19. 发明申请

US20050230047A1 Plasma immersion ion implantation apparatus 审中-公开
标题翻译：等离子体浸没离子注入装置
公开(公告)号：US20050230047A1
公开(公告)日：2005-10-20
申请号：US11046659
申请日：2005-01-28
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01J37/32 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.
摘要翻译：用于执行等离子体浸没离子注入，掺杂剂沉积或表面材料增强的等离子体反应器包括真空室，晶片支撑基座或静电卡盘，其具有位于所述腔室内的晶片支撑表面下方的绝缘电极，耦合到绝缘体的夹持电压源电极，耦合到静电卡盘的散热器，耦合到所述静电卡盘的RF偏置功率发生器，以及耦合到所述腔室并耦合到气体供应的工艺气体供应和气体入口端口。工艺气体供应包含（a）含有要离子注入工件半导体材料中的掺杂剂物质的气体，（b）含有待沉积在工件的半导体材料表面上的掺杂物质的气体，或（c）含有将离子注入到工件中的材料增强物质的气体。

20. 发明申请

US20050191830A1 Plasma immersion ion implantation process 有权
标题翻译：等离子体浸没离子注入工艺
公开(公告)号：US20050191830A1
公开(公告)日：2005-09-01
申请号：US11046661
申请日：2005-01-28
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01J37/32 , H01L21/425
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/67109 , H01L21/6831
摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.
摘要翻译：在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近; 通过将注入种类前体气体引入到腔室中并产生等离子体并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件沉积阈值温度的温度范围内来最小化沉积和最小化蚀刻来对工件进行等离子体浸没离子注入工件蚀刻阈值温度。

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