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1. 发明授权

US07320734B2 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：等离子体浸没离子注入系统，其包括具有低解离和低最小等离子体电压的等离子体源
公开(公告)号：US07320734B2
公开(公告)日：2008-01-22
申请号：US10646527
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321
摘要： A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.
摘要翻译：一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽路径延伸穿过管道并跨越过程区域。反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体在房间里该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

2. 发明授权

US07037813B2 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 失效
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07037813B2
公开(公告)日：2006-05-02
申请号：US10646612
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/04 , H01L21/84
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域，并且将包括待植入物种的工艺气体引入到工件的表面层中。该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

3. 发明授权

US07700465B2 Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage 失效
标题翻译：使用具有低解离和低最小等离子体电压的等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07700465B2
公开(公告)日：2010-04-20
申请号：US10646533
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/26
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.
摘要翻译：用于将物种离子注入到室中的工件的表面层中的方法包括将工件放置在由室侧壁和面向所述工件的室顶部以及室的一对端口之间限定的室的处理区域中靠近处理区域大致相对的两侧，并通过腔室外部的导管连接在一起。该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

4. 发明授权

US07303982B2 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电感耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07303982B2
公开(公告)日：2007-12-04
申请号：US10646467
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/42 , H01L21/425
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域，以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

5. 发明授权

US07291545B2 Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07291545B2
公开(公告)日：2007-11-06
申请号：US11284975
申请日：2005-11-21
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/04
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
摘要翻译：将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

6. 发明授权

US07137354B2 Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage 失效
标题翻译：等离子体浸入式离子注入装置，其包括具有低离解性和低最小等离子体电压的等离子体源
公开(公告)号：US07137354B2
公开(公告)日：2006-11-21
申请号：US10646458
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： G23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321
摘要： A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region and a first hollow conduit outside of the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across said process region. A gas distribution apparatus is provided on or near an interior surface of the reactor for introducing a process gas containing the species to be ion implanted and a first RE plasma source power applicator for generating a plasma in the chamber.
摘要翻译：用于将物质离子注入到工件的表面层中的等离子体浸没离子注入反应器包括具有侧壁和限定腔室的天花板的壳体，以及腔室内的工件支撑基座，其具有面向天花板的工件支撑表面并且限定大致横跨晶片支撑基座延伸并由侧壁横向限制并且在工件支撑基座和天花板之间轴向延伸的过程区域。外壳在工艺区域的大致相对侧具有至少第一对开口，在腔室外部具有第一和第二端，第一和第二端连接到第一对开口中的相应开口，以便提供第一凹槽路径延伸穿过导管并穿过所述过程区域。气体分配装置设置在反应器的内表面上或附近，用于引入含有要离子注入的物质的处理气体和用于在室中产生等离子体的第一RE等离子体源功率施加器。

7. 发明授权

US07430984B2 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements 失效
标题翻译：使用单个发生器和开关元件来驱动具有空间不同等离子体二次谐波的空间分离谐振结构的方法
公开(公告)号：US07430984B2
公开(公告)日：2008-10-07
申请号：US10285092
申请日：2002-10-30
申请人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Andrew Nguyen , Gonzalo Antonio Monroy
发明人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Andrew Nguyen , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
摘要翻译：一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域，所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径工艺区域，第一和第二等离子体源功率施加器电感耦合到第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机，连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

8. 发明申请

US20180277340A1 PLASMA REACTOR WITH ELECTRON BEAM OF SECONDARY ELECTRONS 审中-公开
公开(公告)号：US20180277340A1
公开(公告)日：2018-09-27
申请号：US15948949
申请日：2018-04-09
申请人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
发明人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
IPC分类号： H01J37/32 , H01L21/02
CPC分类号： H01J37/32568 , C23C16/26 , C23C16/5096 , H01J37/32183 , H01J37/3244 , H01J37/32669 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H01L21/02115 , H01L21/02274 , H01L21/0234 , H01L21/02351
摘要： An electron beam plasma reactor includes a plasma chamber having a side wall, an upper electrode, a workpiece support to hold a workpiece facing the upper electrode with the workpiece on the support having a clear view of the upper electrode, a first RF power source coupled to said upper electrode, a gas supply, a vacuum pump coupled to the chamber to evacuate the chamber, and a controller. The controller is configured to operate the first RF power source to apply an RF power to upper electrode, and to operate the gas distributor and vacuum pump, so as to create a plasma in an upper portion of the chamber that generates an electron beam from the upper electrode toward the workpiece and a lower electron-temperature plasma in a lower portion of the chamber including the workpiece.

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