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    • 13. 发明授权
    • Method for aligning semiconductor wafer surface scans and identifying
added and removed particles resulting from wafer handling or processing
    • 用于对准半导体晶片表面扫描并识别由晶片处理或加工产生的添加和去除的颗粒的方法
    • US5870187A
    • 1999-02-09
    • US907589
    • 1997-08-08
    • Yuri UritskyPatrick D. KinneyMan-Ping Cai
    • Yuri UritskyPatrick D. KinneyMan-Ping Cai
    • G01N21/95G01N21/00
    • G01N21/9501
    • An automated method for aligning wafer surface scan maps and locating defects such as particle contaminant distributions on a wafer surface. More specifically, the invention is an automated method for locating added and removed contaminants and other defects on a semiconductor wafer surface after the wafer has undergone wafer-handling and/or processing. A second data set of a second scan of a wafer surface is misalignment-corrected to a first coordinate system of a first scan of the wafer surface. Thereafter, a final match is made between a first data set of the first scan and the misalignment-corrected data of the second scan. Non-matching locations in the misalignment-corrected data of the second scan represent added defects on the surface of the wafer. Non-matching locations in the base data of the first scan represent removed defects from the surface of the wafer.
    • 用于对准晶片表面扫描图并定位诸如颗粒污染物分布在晶片表面上的缺陷的自动化方法。 更具体地,本发明是一种自动化方法,用于在晶片经过晶片处理和/或处理之后,在半导体晶片表面上定位添加和去除的污染物和其它缺陷。 晶片表面的第二次扫描的第二数据组对于晶片表面的第一次扫描的第一坐标系进行未对准校正。 此后,在第一扫描的第一数据集和第二扫描的未对准校正数据之间进行最终匹配。 第二扫描的未对准校正数据中的非匹配位置表示晶片表面上的附加缺陷。 第一次扫描的基础数据中的非匹配位置表示从晶片表面去除的缺陷。
    • 16. 发明授权
    • Multiple-scan method for wafer particle analysis
    • 晶圆颗粒分析的多重扫描方法
    • US5422724A
    • 1995-06-06
    • US116232
    • 1993-08-31
    • Patrick D. KinneyYuri S. UritskyHarry Q. Lee
    • Patrick D. KinneyYuri S. UritskyHarry Q. Lee
    • G01B11/00G01N15/00G01R31/305G01R31/307H01J37/22H01L21/66
    • G01R31/305G01R31/307H01L22/20H01L22/12
    • A method for reducing targeting errors encountered when trying to locate contaminant particles in a high-magnification imaging device, based on estimates of the particle positions obtained from a scanning device. The method of the invention includes scanning a semiconductor wafer in a scanning device, then preferably moving the wafer to a different orientation, and scanning the wafer again, to obtain at least two sets of particle coordinates that may differ slightly because of uncertainties in the scanning process. The multiple sets of coordinates are averaged to reduce the targeting errors, but only after transforming the coordinates to a common coordinate system. The transformation step includes computing transformation parameters for each possible pair of particles detected in at least two scans, averaging the results, and then transforming all of the particle coordinates to the common coordinate system. Optionally, the method may include discarding any transformation parameters that deviate too far from the average, and then computing the average transformation parameters again.
    • 基于从扫描装置获得的粒子位置的估计,减少在高倍率成像装置中定位污染物颗粒时遇到的瞄准误差的方法。 本发明的方法包括在扫描装置中扫描半导体晶片,然后优选地将晶片移动到不同的取向,并再次扫描晶片,以获得由于扫描中的不确定性而可能略有不同的至少两组粒子坐标 处理。 对多组坐标进行平均以减少目标误差,但仅在将坐标转换为公共坐标系之后。 变换步骤包括计算在至少两次扫描中检测到的每个可能的一对颗粒的变换参数,对结果求平均值,然后将所有粒子坐标转换为公共坐标系。 可选地,该方法可以包括丢弃偏离平均值太远的任何变换参数,然后再次计算平均变换参数。
    • 17. 发明授权
    • Method of particle analysis on a mirror wafer
    • 在镜片上进行粒子分析的方法
    • US5267017A
    • 1993-11-30
    • US886541
    • 1992-05-20
    • Yuri S. UritskyHarry Q. LeePatrick D. KinneyKang-Ho Ahn
    • Yuri S. UritskyHarry Q. LeePatrick D. KinneyKang-Ho Ahn
    • G01R31/305G01R31/307G01B11/00
    • G01R31/305G01R31/307
    • A method for reducing targeting errors encountered when trying to locate contaminant particles in a high-magnification imaging device, based on estimates of the particle positions obtained from a scanning device. The method of the invention uses three techniques separately and in combination. The first technique includes selecting at least three reference particles, to provide multiple unique pairs of reference particles for computation of an averaged set of coordinate transformation parameters, used to transform particle position coordinates from the coordinate system of the scanning device to the coordinate system of the imaging device. The averaged transformation parameters result in much smaller targeting errors between the estimated and actual positions of the particles. The targeting errors are further reduced by the use of multiple scans of the scanning device. In a third technique, accumulated reference particle targeting errors observed in prior processing of other wafers are used to reduce these targeting errors when processing a new wafer.
    • 基于从扫描装置获得的粒子位置的估计,减少在高倍率成像装置中定位污染物颗粒时遇到的瞄准误差的方法。 本发明的方法分别使用三种技术组合。 第一技术包括选择至少三个参考粒子,以提供用于计算平均坐标变换参数集合的多个独特的参考粒子对,用于将粒子位置坐标从扫描装置的坐标系转换为坐标系的坐标系 成像装置。 平均变换参数导致粒子的估计位置和实际位置之间的目标误差小得多。 通过使用扫描设备的多次扫描,进一步减少了定位错误。 在第三种技术中,在处理新晶片时,使用在其它晶片的先前处理中观察到的累积参考粒子瞄准误差来减少这些瞄准误差。