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11. 发明申请

US20060096952A1 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US20060096952A1
公开(公告)日：2006-05-11
申请号：US11266232
申请日：2005-11-04
申请人： Masanobu Honda
发明人： Masanobu Honda
IPC分类号： C23F1/00 , B44C1/22 , G05B21/00 , C23F3/00
CPC分类号： H01L21/31116
摘要： Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one triple bond within the molecule and at least one CF3 group bonded by a single bond to the carbon atom forming the triple bond with the adjacent carbon atom such as 1,1,1,4,4,4-hexafluoro-2-butyne or 1,1,1,4,4,5,5,5-octafluoro-2-pentyne.
摘要翻译：公开了一种通过使用含有氟碳化合物的处理气体的等离子体来处理目标物体的等离子体处理方法。使用的是在分子内具有至少一个三键的氟碳化合物和至少一个通过单键与碳原子键合的至少一个CF 3基团，与碳原子形成与相邻碳原子的三键，例如1， 1,1,4,4,4-六氟-2-丁炔或1,1,1,4,4,5,5,5-八氟-2-戊炔。

12. 发明申请

US20050103441A1 Etching method and plasma etching apparatus 审中-公开
标题翻译：蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20050103441A1
公开(公告)日：2005-05-19
申请号：US10844498
申请日：2004-05-13
申请人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： There is provided an etching method and a plasma etching apparatus capable of taking a large etching selection ratio and of forming a hole having an appropriate shape. When etching an etching target film 204 by using an organic film 202 having a predetermined pattern as a mask, processing gas is introduced into an airtight processing container 104. There are provided a high frequency power source 122 of 40 MHz and a high frequency power source 128 of 3.2 MHz, by which two different kinds of high frequency powers are applied to a lower electrode 106. The power of each high frequency power is properly combined, thereby executing the etching process by using low plasma electron density Ne and high self-bias voltage Vdc which are generated by high frequency power.
摘要翻译：提供了能够获得大的蚀刻选择比和形成具有适当形状的孔的蚀刻方法和等离子体蚀刻装置。当通过使用具有预定图案的有机膜202作为掩模蚀刻蚀刻目标膜204时，处理气体被引入到气密处理容器104中。提供40MHz的高频电源122和3.2MHz的高频电源128，通过该高频电源128将两种不同种类的高频功率施加到下电极106。每个高频功率的功率被适当组合，从而通过使用由高频功率产生的低等离子体电子密度Ne和高自偏压Vdc来执行蚀刻处理。

13. 发明授权

US5942846A Deflection yoke with horizontal deflection coil 失效
标题翻译：偏转线圈与水平偏转线圈
公开(公告)号：US5942846A
公开(公告)日：1999-08-24
申请号：US27851
申请日：1998-02-23
申请人： Masanobu Honda , Koji Shimada
发明人： Masanobu Honda , Koji Shimada
IPC分类号： H01J29/76
CPC分类号： H01J29/762
摘要： A deflection yoke is formed with a saddle shaped horizontal deflection coil (85), a saddle shaped vertical deflection coil (86) located outside the horizontal deflection coil (85), and a ferrite core (87) located outside the vertical deflection coil (86). The screen side flange portion (82) of the horizontal deflection coil (85) has a gap (83) therethrough in the upper and lower direction. The screen side flange portion (82) is an arch-shaped portion provided at a screen side end of the horizontal deflection coil (85).
摘要翻译：偏转线圈形成有鞍形水平偏转线圈（85），位于水平偏转线圈（85）外侧的鞍形垂直偏转线圈（86）和位于垂直偏转线圈（86）外侧的铁氧体磁心（87））。水平偏转线圈（85）的屏幕侧凸缘部（82）在上下方向上具有间隙（83）。屏幕侧凸缘部分（82）是设置在水平偏转线圈（85）的屏幕侧端的拱形部分。

14. 发明授权

US5880660A Cathode ray tube apparatus 失效
标题翻译：阴极射线管装置
公开(公告)号：US5880660A
公开(公告)日：1999-03-09
申请号：US993423
申请日：1997-12-18
申请人： Katsuyo Iwasaki , Kenichiro Taniwa , Masanobu Honda
发明人： Katsuyo Iwasaki , Kenichiro Taniwa , Masanobu Honda
IPC分类号： H01J29/76 , H01H1/00
CPC分类号： H01J29/76
摘要： A cathode ray tube apparatus comprising: a deflection yoke comprising a horizontal deflection coil that forms the pin cushion distortion as a whole; a vertical deflection coil that forms the barrel distortion as a whole: a resin frame provided around the periphery of the horizontal deflection coil, which insulates and fastens the horizontal deflection coil and the vertical deflection coil; and a ferrite core provided around the periphery of the vertical deflection coil to strengthen the magnetic flux and the length of part of cone portion of the horizontal deflection coil at the side of the screen whose winding angle is not less than 0 degree nor more than 30 degree with respect to the reference line is 25 mm or longer as measured from the reference line. This cathode ray tube apparatus can correct the pin cushion distortion of raster in the upper-and-lower side of the picture for flattened and increased deflection angle cathode ray tubes with the deflection yoke itself.
摘要翻译：一种阴极射线管装置，包括：偏转线圈，包括整体形成所述引脚缓冲变形的水平偏转线圈; 整体形成桶形变形的垂直偏转线圈：设置在水平偏转线圈的周围的树脂框架，其使水平偏转线圈和垂直偏转线圈绝缘并固定; 以及设置在垂直偏转线圈的周围的铁氧体磁芯，以加强磁极和水平偏转线圈在屏幕侧的锥部的部分的长度，其卷绕角度不小于0度，不大于30度相对于基准线的度为25mm以上，从基准线测定。该阴极射线管装置可以校正图像的上下侧的光栅的针缓冲变形，以使偏转线圈本身变扁平和增大偏转角的阴极射线管。

15. 发明授权

US4660110A Magnetic disk storage device with shroud enclosing disk assembly 失效
标题翻译：磁盘存储设备，带护罩包围盘组件
公开(公告)号：US4660110A
公开(公告)日：1987-04-21
申请号：US548515
申请日：1983-11-03
申请人： Muneo Iida , Jyosei Simizu , Masami Suzuki , Nobuyuki Okamoto , Toshinori Kazama , Masanobu Honda , Jiro Mochida , Seiji Tada , Masayuki Fujii
发明人： Muneo Iida , Jyosei Simizu , Masami Suzuki , Nobuyuki Okamoto , Toshinori Kazama , Masanobu Honda , Jiro Mochida , Seiji Tada , Masayuki Fujii
IPC分类号： G11B17/038 , G11B25/04 , G11B33/14 , G11B5/012
CPC分类号： G11B33/1446 , G11B17/038 , G11B25/043
摘要： A magnetic disk storage device capable of avoiding the occurrence of vibration of magnetic disks and off-track of magnetic heads with respect to the magnetic disks, including an inner shroud enclosing a disk assembly composed of a multiplicity of magnetic disks stacked in superposed relation with spacers being interposed therebetween and formed at its outer peripheral wall with first ports for inserting access arms therethrough and at its top above a spindle supporting the disk assembly with a second port, a cylindrical filter for removing dust from air flowing through the second port of the inner shroud into the interior thereof, and a dust cover enclosing the inner shroud, actuators and filter. The provision of the inner shroud is conductive to prevention of development of turbulent air flow in the vicinity of the magnetic disks. The inner shroud is further formed at its outer peripheral wall with a multiplicity of small apertures for releasing heat generated in the inner shroud to outside, to thereby avoid thermal off-track of the magnetic heads.
摘要翻译：一种磁盘存储装置，其能够避免相对于磁盘发生磁盘的振动和磁头的偏离磁道，包括封闭由与多个间隔堆叠叠置的多个磁盘组成的磁盘组件的内罩并且在其外周壁处形成有用于插入进入臂的第一端口，并且其顶部位于支撑具有第二端口的盘组件的主轴上;圆柱形过滤器，用于从流过内部的第二端口的空气中去除灰尘护罩进入其内部，以及包围内护罩，致动器和过滤器的防尘盖。内护罩的设置是导电的，以防止磁盘附近的湍流气流的发展。内护罩在其外周壁处进一步形成有多个小孔，用于将内护罩中产生的热释放到外部，从而避免了磁头的热偏离。

16. 发明授权

US08790489B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08790489B2
公开(公告)日：2014-07-29
申请号：US13175096
申请日：2011-07-01
申请人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
发明人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , H01L21/311 , H01J37/32 , H01L21/67 , H01J37/18 , C23C16/06 , C23C16/22
CPC分类号： H01L21/6719 , H01J37/18 , H01J37/32091 , H01J37/32633 , H01J37/32834 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.
摘要翻译：基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触，并且能够与排气板间隔开。

17. 发明申请

US20130014895A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20130014895A1
公开(公告)日：2013-01-17
申请号：US13542818
申请日：2012-07-06
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , C23C16/4558 , H01J37/3244
摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.
摘要翻译：基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204，中心气以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

18. 发明授权

US08263499B2 Plasma processing method and computer readable storage medium 有权
标题翻译：等离子体处理方法和计算机可读存储介质
公开(公告)号：US08263499B2
公开(公告)日：2012-09-11
申请号：US12414920
申请日：2009-03-31
申请人： Masanobu Honda , Michiko Nakaya
发明人： Masanobu Honda , Michiko Nakaya
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01J37/32027 , H01J37/32091 , H01L21/0273 , H01L21/31116
摘要： A plasma etching method includes disposing first electrode and second electrodes; preparing a part in a processing chamber; supporting a substrate by the second electrode to face the first electrode; vacuum-evacuating the processing chamber; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film on the substrate by using the plasma. Further, a resist modification process includes vacuum-evacuating the processing chamber; supplying a second processing gas into the processing space; generating a plasma; and applying a negative DC voltage to the part, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate.
摘要翻译：等离子体蚀刻方法包括：配置第一电极和第二电极; 在处理室中准备一部分; 通过所述第二电极支撑衬底以面对所述第一电极; 真空抽真空处理室; 将含有蚀刻剂气体的第一处理气体供应到第一电极和第二电极之间的处理空间中; 通过向所述第一电极或所述第二电极施加射频功率来在所述处理空间中产生所述第一处理气体的等离子体; 并通过使用等离子体在基板上蚀刻膜。此外，抗蚀剂修饰工艺包括对处理室进行真空抽真空; 将第二处理气体供应到所述处理空间中; 产生等离子体以及向所述部分施加负的DC电压，所述部分远离处理室中的衬底设置，并将从部件排出的电子注入到衬底上的抗蚀剂图案中。

19. 发明授权

US08241514B2 Plasma etching method and computer readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US08241514B2
公开(公告)日：2012-08-14
申请号：US12413999
申请日：2009-03-30
申请人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
发明人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/32027 , H01J37/32091 , H01L21/67069
摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.
摘要翻译：等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

20. 发明授权

US08157952B2 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US08157952B2
公开(公告)日：2012-04-17
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20.在等离子体处理室10中，可以在半导体晶片W上执行RIE和灰化使用从加入到容器11中的加工气体产生的等离子体。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

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