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1. 发明授权

US08790489B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08790489B2
公开(公告)日：2014-07-29
申请号：US13175096
申请日：2011-07-01
申请人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
发明人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , H01L21/311 , H01J37/32 , H01L21/67 , H01J37/18 , C23C16/06 , C23C16/22
CPC分类号： H01L21/6719 , H01J37/18 , H01J37/32091 , H01J37/32633 , H01J37/32834 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.
摘要翻译：基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触，并且能够与排气板间隔开。

2. 发明授权

US09460893B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09460893B2
公开(公告)日：2016-10-04
申请号：US13542818
申请日：2012-07-06
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： C23C16/455 , H01J37/32
CPC分类号： H01J37/32091 , C23C16/4558 , H01J37/3244
摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.
摘要翻译：基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204，中心气以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

3. 发明授权

US09349619B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US09349619B2
公开(公告)日：2016-05-24
申请号：US14238552
申请日：2012-08-28
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/67 , H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/67109 , H01L21/67248 , H01L21/6831
摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.
摘要翻译：等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件。

4. 发明授权

US09048178B2 Plasma etching method and semiconductor device manufacturing method 有权
标题翻译：等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US09048178B2
公开(公告)日：2015-06-02
申请号：US14346986
申请日：2012-09-25
申请人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
发明人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
IPC分类号： H01L21/302 , H01L21/66 , H01J37/32 , H01L21/311 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.
摘要翻译：提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布在等离子体产生单元产生的等离子体中，在衬底上方的空间内。

5. 发明申请

US20130014895A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20130014895A1
公开(公告)日：2013-01-17
申请号：US13542818
申请日：2012-07-06
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , C23C16/4558 , H01J37/3244
摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.
摘要翻译：基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204，中心气以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

6. 发明申请

US20140193977A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20140193977A1
公开(公告)日：2014-07-10
申请号：US14238552
申请日：2012-08-28
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/67 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/67109 , H01L21/67248 , H01L21/6831
摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.
摘要翻译：等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件。

7. 发明授权

US08999068B2 Chamber cleaning method 有权
标题翻译：室内清洗方式
公开(公告)号：US08999068B2
公开(公告)日：2015-04-07
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C23C16/44 , H01J37/32
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译：提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

8. 发明授权

US08524331B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08524331B2
公开(公告)日：2013-09-03
申请号：US12943967
申请日：2010-11-11
申请人： Masanobu Honda
发明人： Masanobu Honda
IPC分类号： H05H1/24
CPC分类号： H01J37/32165 , C23C16/045 , C23C16/455 , C23C16/52 , H01J37/32091 , H01J37/3266
摘要： A substrate processing method effectively suppresses non-uniformity in deposition degree on a surface of a substrate. The substrate processing method includes depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate. Plasma is generated in the depositing process by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to equal to or higher than about 100 mTorr.
摘要翻译：基板处理方法有效地抑制基板表面的沉积程度的不均匀性。基板处理方法包括在抗蚀剂图案的每个开口的侧壁上沉积沉积物，其形成在基板的蚀刻目标膜上的抗反射膜上，并且在蚀刻蚀刻目标膜之前设置有多个开口底物。在沉积过程中通过以等于或高于约1000sccm的流速将CHF基气体引入处理室而在处理室中的压力设定为等于或高于约100mTorr时，在沉积过程中产生等离子体。

9. 发明授权

US08404595B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08404595B2
公开(公告)日：2013-03-26
申请号：US11860788
申请日：2007-09-25
申请人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
发明人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
IPC分类号： H01L23/302 , H01L21/461 , B23P15/00 , C03C25/00 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , B44C1/22
CPC分类号： H01L21/467 , H01J37/32091 , H01J37/32165 , H01L21/31116
摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.
摘要翻译：用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源，设置成面对第一电极的电极。该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二电极。通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

10. 发明申请

US20110114113A1 SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD THEREOF AND STORAGE MEDIUM STORING PROGRAM 审中-公开
标题翻译：基板加工设备，其清洁方法和存储介质存储程序
公开(公告)号：US20110114113A1
公开(公告)日：2011-05-19
申请号：US12948307
申请日：2010-11-17
申请人： Masanobu Honda , Takahiro Murakami , Takanori Mimura , Hidetoshi Hanaoka
发明人： Masanobu Honda , Takahiro Murakami , Takanori Mimura , Hidetoshi Hanaoka
IPC分类号： B08B7/00 , H01L21/3065
CPC分类号： B08B7/0035 , H01J37/32091 , H01J37/32165 , H01J37/32449 , H01J37/32862
摘要： There is provided a cleaning method for a substrate processing apparatus capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber 102 under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode 111 and a upper electrode 120. Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased as an absolute value of the self-bias voltage decreases.
摘要翻译：提供了一种能够提高沉积物去除速率而不增加自偏压的基板处理装置的清洗方法。该清洗方法包括：以预定的处理条件，以预定的处理气体的流量比将供给包含O 2气体和惰性气体的处理气体供给到处理室102的内部，并且通过在下电极111和上电极120之间施加高频电力来产生处理气体的等离子体。这里，处理气体的预设流量比根据下电极111的自偏压设定，随着自偏压的绝对值的降低，Ar气体的流量比增加，O 2气体的流量比降低。

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