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11. 发明申请

US20050173150A1 Multi-layer printed board 失效
标题翻译：多层印刷板
公开(公告)号：US20050173150A1
公开(公告)日：2005-08-11
申请号：US10663723
申请日：2003-09-17
申请人： Yasuhiro Shiraki
发明人： Yasuhiro Shiraki
IPC分类号： H05K3/46 , H05K1/02 , H05K1/03 , H05K1/11 , H05K3/42 , H05K7/06
CPC分类号： H05K1/0219 , H05K1/0237 , H05K1/116 , H05K3/429 , H05K2201/09381 , H05K2201/09618
摘要： A multi-layer printed board including signal layers, each signal layer including a signal line, a through-hole, and a ground through-hole. The signal layer includes a land connecting the through-hole and the signal line. An external periphery of the land has a first portion farthest from a center of the land, and a second portion extending a shorter distance from the center of the land than the first portion. A portion of the external periphery of the land opposite to the ground through-hole closest to the center of the land, is the second portion. Consequently, impedance matching can be improved even if a signal frequency is high.
摘要翻译：包括信号层的多层印刷电路板，每个信号层包括信号线，通孔和地面通孔。信号层包括连接通孔和信号线的平台。所述焊盘的外围具有距离所述焊盘的中心最远的第一部分和从所述焊盘的中心延伸的距离小于所述第一部分的第二部分。第二部分是与地面中心最接近的地面通孔相对的地面的外围部分。因此，即使信号频率高，也可以提高阻抗匹配。

12. 发明授权

US4672406A Semiconductor member and semiconductor device employing the same 失效
标题翻译：采用该半导体元件的半导体元件和半导体器件
公开(公告)号：US4672406A
公开(公告)日：1987-06-09
申请号：US684691
申请日：1984-12-21
申请人： Yasushi Sawada , Kiichi Ueyanagi , Yoshifumi Katayama , Yasuhiro Shiraki , Makoto Morioka , Takao Kuroda , Tomoyoshi Mishima
发明人： Yasushi Sawada , Kiichi Ueyanagi , Yoshifumi Katayama , Yasuhiro Shiraki , Makoto Morioka , Takao Kuroda , Tomoyoshi Mishima
IPC分类号： H01L29/812 , H01L21/338 , H01L21/8252 , H01L27/095 , H01L29/201 , H01L29/205 , H01L29/36 , H01L29/43 , H01L29/47 , H01L29/778 , H01L29/80
CPC分类号： H01L21/8252 , H01L27/095 , H01L29/432 , H01L29/475 , H01L29/7783
摘要： A semiconductor member has a structure wherein a first semiconductor layer is held between second and third semiconductor layers which have forbidden band widths greater than a forbidden band width of the first semiconductor layer, and wherein only the second semiconductor layer which is formed on a side of the first semiconductor layer close to a substrate is doped with impurities. The semiconductor member constructs the depletion type with the first and second semiconductor layers, and the enhancement type with the first and third semiconductor layers. A semiconductor device can be properly formed in the enhancement or depletion type by selectively connecting the semiconductor layers.
摘要翻译：半导体部件具有这样的结构，其中第一半导体层被保持在禁止带宽大于第一半导体层的禁带宽度的第二和第三半导体层之间，并且其中只有形成在第一半导体层靠近基板的第一半导体层掺杂有杂质。半导体部件利用第一和第二半导体层构成耗尽型，并且利用第一和第三半导体层构成增强型。可以通过选择性地连接半导体层，以增强或耗尽型形式适当地形成半导体器件。

13. 发明申请

US20140240948A1 POWER CONVERSION DEVICE 有权
标题翻译：电源转换器件
公开(公告)号：US20140240948A1
公开(公告)日：2014-08-28
申请号：US14348345
申请日：2011-09-30
申请人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
发明人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
IPC分类号： H05K9/00 , H05K7/20 , H02P27/04
CPC分类号： H05K9/0064 , H02M1/12 , H02M7/003 , H02M7/44 , H02M7/48 , H02M7/537 , H02P27/04 , H05K7/20409
摘要： A power conversion device includes an inverter that drives a motor; a fin that cools down the inverter; a first core including a through hole that allows passage of a positive side conductor that connects a power supply system and the inverter and a negative side conductor that grounds the inverter; a ground conductor that grounds the fin; a ground conductor that grounds a motor yoke via a capacitor; and a ground conductor including one end that is connected to the negative side conductor or the ground conductor and the other end that is grounded.
摘要翻译：电力转换装置包括：驱动电动机的逆变器; 冷却变频器的翅片; 第一铁芯，包括允许通过连接电源系统和逆变器的正侧导体的通孔和使逆变器接地的负侧导体; 接地导体，接地导体，通过电容器接地电机磁轭; 以及接地导体，其包括连接到负侧导体或接地导体的一端和接地的另一端。

14. 发明申请

US20060104000A1 Electronic control unit 有权
标题翻译：电子控制单元
公开(公告)号：US20060104000A1
公开(公告)日：2006-05-18
申请号：US11201382
申请日：2005-08-11
申请人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
发明人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
IPC分类号： H02H3/08 , H02H9/02
CPC分类号： H02H9/005 , H02H9/046
摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106
摘要翻译：本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi✓（L 1xC 1）] <35×10 6的范围内， / SUP>。

15. 发明授权

US4835583A Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate 失效
标题翻译：具有掺杂GaAs衬底的具有应变超晶格缓冲层的半导体器件
公开(公告)号：US4835583A
公开(公告)日：1989-05-30
申请号：US895913
申请日：1986-08-13
申请人： Makoto Morioka , Tomoyoshi Mishima , Kenji Hiruma , Yoshifumi Katayama , Yasuhiro Shiraki
发明人： Makoto Morioka , Tomoyoshi Mishima , Kenji Hiruma , Yoshifumi Katayama , Yasuhiro Shiraki
IPC分类号： H01L21/20
CPC分类号： H01L21/02631 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546
摘要： An epitaxial crystal grown layer structure which permits, on an In-doped GaAs substrate, which will be industrially used in large quantities, the growth of an epitaxial layer having the same good quality as the epitaxial layer grown on an undoped GaAs substrate.
摘要翻译：外延晶体生长层结构允许在工业上大量使用的In掺杂GaAs衬底上生长与在未掺杂的GaAs衬底上生长的外延层具有相同质量的外延层的生长。

16. 发明授权

US4759030A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4759030A
公开(公告)日：1988-07-19
申请号：US870948
申请日：1986-06-05
申请人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
发明人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/0425
摘要： A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.
摘要翻译：具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同，并且由它们的组合形成的电子和空穴或激子可以是不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。更确定地，在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。

17. 发明授权

US5831296A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5831296A
公开(公告)日：1998-11-03
申请号：US235155
申请日：1994-04-28
申请人： Takao Kuroda , Yasuhiro Shiraki
发明人： Takao Kuroda , Yasuhiro Shiraki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/80
CPC分类号： H01L29/205 , H01L29/7783 , Y10S438/938
摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.
摘要翻译：公开了一种半导体器件，其包括未掺杂的GaAs层，中间未掺杂层和未掺杂的Ga1-xAlxAs层，其连续地设置在由半绝缘GaAs晶体制成的衬底上; 中间未掺杂层是未掺杂的In y Ga 1-y As层，未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs层或包含未掺杂的GaAs1-zSb层和未掺杂的GaAs层的超晶格层。当施加到高电子迁移率晶体管时，该半导体器件提供高电流和高速度，并且其阈值电压具有小的色散。

18. 发明授权

US5047111A Method of forming a metal silicide film 失效
标题翻译：形成金属硅化物膜的方法
公开(公告)号：US5047111A
公开(公告)日：1991-09-10
申请号：US110580
申请日：1987-10-16
申请人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
发明人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
IPC分类号： C30B1/02 , H01L21/285
CPC分类号： H01L21/28518 , C30B1/023 , C30B29/10
摘要： Films of desired metal, e.g., Ni or Co, and of Si are laminated alternatelyn a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.
摘要翻译：将期望的金属（例如Ni或Co）和Si的膜交替层叠在单晶硅衬底上以形成多层结构，然后将衬底加热以生长外延NiSi 2或CoSi 2膜，固相少 Ni或Co原子扩散到硅衬底中。多层结构中的每个层具有在30-300A范围内选择的厚度，Si / Ni（或Si / Co）的总组成比在1.8-2.0的范围内。层压方法是在不使层压膜与基板反应而不会使多层结构变得多晶的基板温度下进行的。低于350℃以形成NiSi2膜或低于450℃以形成CoSi 2膜。在350〜-750℃的衬底加热温度下实现固相外延，用于形成外延NiSi2膜或450-1000℃以形成CoSi 2膜。

19. 发明授权

US09271432B2 Power conversion device with reduced noise source current, reduced high frequency current and reduced resonance current 有权
标题翻译：具有降低噪声源电流的功率转换器件，降低高频电流和降低谐振电流
公开(公告)号：US09271432B2
公开(公告)日：2016-02-23
申请号：US14348345
申请日：2011-09-30
申请人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
发明人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
IPC分类号： H02M7/00 , H05K9/00 , H02M7/48 , H02M1/12 , H02P27/04 , H05K7/20 , H02M7/537 , H02M7/44
CPC分类号： H05K9/0064 , H02M1/12 , H02M7/003 , H02M7/44 , H02M7/48 , H02M7/537 , H02P27/04 , H05K7/20409
摘要： A power conversion device includes an inverter that drives a motor; a fin that cools down the inverter; a first core including a through hole that allows passage of a positive side conductor that connects a power supply system and the inverter and a negative side conductor that grounds the inverter; a ground conductor that grounds the fin; a ground conductor that grounds a motor yoke via a capacitor; and a ground conductor including one end that is connected to the negative side conductor or the ground conductor and the other end that is grounded.
摘要翻译：电力转换装置包括：驱动电动机的逆变器; 冷却变频器的翅片; 第一铁芯，包括允许通过连接电源系统和逆变器的正侧导体的通孔和使逆变器接地的负侧导体; 接地导体，接地导体，通过电容器接地电机磁轭; 以及接地导体，其包括连接到负侧导体或接地导体的一端和接地的另一端。

20. 发明授权

US07187225B2 Electronic control unit 有权
标题翻译：电子控制单元
公开(公告)号：US07187225B2
公开(公告)日：2007-03-06
申请号：US11201382
申请日：2005-08-11
申请人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
发明人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
IPC分类号： H03K5/08
CPC分类号： H02H9/005 , H02H9/046
摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106
摘要翻译：本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi√（L 1x C 1）] <35×10 6的范围内， / SUP>。

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