专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06884724B2 Method for dishing reduction and feature passivation in polishing processes 失效
公开(公告)号：US06884724B2
公开(公告)日：2005-04-26
申请号：US09939323
申请日：2001-08-24
申请人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl
发明人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/288 , H01L21/321 , H01L21/20
CPC分类号： H01L21/7684 , H01L21/3212
摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

12. 发明授权

US07427568B2 Method of forming an interconnect structure 失效
标题翻译：形成互连结构的方法
公开(公告)号：US07427568B2
公开(公告)日：2008-09-23
申请号：US11424359
申请日：2006-06-15
申请人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
发明人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
IPC分类号： H01L21/311 , C23C14/34
CPC分类号： C23C16/45589 , C23C14/046 , C23C16/045 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76865
摘要： A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.
摘要翻译：公开了一种在具有高纵横比特征的基底上形成层的方法。该层由包含一种或多种工艺气体和一种或多种蚀刻物质的气体混合物形成。一种或多种工艺气体反应以在衬底上沉积材料层。结合材料层沉积，蚀刻物质选择性地去除与高纵横比特征开口相邻的沉积材料层的部分，以无空隙和/或无缝隙的方式填充这些特征。材料层可以使用物理气相沉积（PVD）和/或化学气相沉积（CVD）技术沉积在衬底上。

13. 发明授权

US07115516B2 Method of depositing a material layer 失效
标题翻译：沉积材料层的方法
公开(公告)号：US07115516B2
公开(公告)日：2006-10-03
申请号：US09974535
申请日：2001-10-09
申请人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
发明人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
IPC分类号： H01L21/4763
CPC分类号： C23C16/45589 , C23C14/046 , C23C16/045 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76865
摘要： A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.
摘要翻译：公开了一种在具有高纵横比特征的基底上形成层的方法。该层由包含一种或多种工艺气体和一种或多种蚀刻物质的气体混合物形成。一种或多种工艺气体反应以在衬底上沉积材料层。结合材料层沉积，蚀刻物质选择性地去除与高纵横比特征开口相邻的沉积材料层的部分，以无空隙和/或无缝隙的方式填充这些特征。材料层可以使用物理气相沉积（PVD）和/或化学气相沉积（CVD）技术沉积在衬底上。

14. 发明授权

US06258223B1 In-situ electroless copper seed layer enhancement in an electroplating system 有权
标题翻译：电镀系统中的原位无电铜种子层增强
公开(公告)号：US06258223B1
公开(公告)日：2001-07-10
申请号：US09350877
申请日：1999-07-09
申请人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
发明人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/123 , C25D17/001 , H01L21/68728 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.
摘要翻译：本发明公开了一种系统，其提供用电镀方法原位进行的无电沉积，以在电镀过程之前使氧化和其它污染物最小化。该系统允许基板由无电镀沉积工艺转移到具有保护涂层的电镀工艺中以使氧化最小化。该系统通常包括具有主机基板传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理设备，流体连接到该一个或多个处理施加器的无电解供应器，并且可选地包括旋转干燥（SRD）站，快速热退火室和用于控制沉积过程和电化学沉积系统的组件的系统控制器。

15. 发明授权

US07772121B2 Method of forming a trench structure 失效
标题翻译：形成沟槽结构的方法
公开(公告)号：US07772121B2
公开(公告)日：2010-08-10
申请号：US11424351
申请日：2006-06-15
申请人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
发明人： Liang-Yuh Chen , Daniel A. Carl , Israel Beinglass
IPC分类号： H01L21/00
CPC分类号： C23C16/45589 , C23C14/046 , C23C16/045 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76865
摘要： A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.
摘要翻译：公开了一种在具有高纵横比特征的基底上形成层的方法。该层由包含一种或多种工艺气体和一种或多种蚀刻物质的气体混合物形成。一种或多种工艺气体反应以在衬底上沉积材料层。结合材料层沉积，蚀刻物质选择性地去除与高纵横比特征开口相邻的沉积材料层的部分，以无空隙和/或无缝隙的方式填充这些特征。材料层可以使用物理气相沉积（PVD）和/或化学气相沉积（CVD）技术沉积在衬底上。

16. 发明授权

US06893548B2 Method of conditioning electrochemical baths in plating technology 失效
标题翻译：电镀技术中电化学浴的调理方法
公开(公告)号：US06893548B2
公开(公告)日：2005-05-17
申请号：US09882208
申请日：2001-06-13
申请人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
发明人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
IPC分类号： C23C18/16 , C25D7/12 , C25D21/12 , C25D21/18 , C25D5/00
CPC分类号： C25D21/18 , C23C18/1617 , C23C18/1683 , C25D21/12
摘要： An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition. The constituents may be added at the beginning of the use of the bath to initially condition the electrochemical bath or may be added, preferably either continuously or periodically, during the electrochemical deposition process.
摘要翻译：提供了一种用于分析或调理电化学浴的装置和方法。本发明的一个方面提供了一种用于在电化学沉积方法中分析电化学浴的方法，包括提供具有第一浴组成的第一电化学浴，利用电化学沉积工艺中的第一电化学浴形成具有第二浴的第二电化学浴组合和分析第一和第二组合物以鉴定在电化学沉积过程中产生的一种或多种成分。具有与在电化学沉积工艺中产生的一种或多种成分中的全部或至少一些基本上相同的组成的添加剂材料可以加入到另一电化学浴中以产生所需的化学组成。可以在使用浴的开始时添加组分以最初调节电化学浴，或者可以在电化学沉积过程期间连续地或周期性地添加。

17. 发明授权

US06896776B2 Method and apparatus for electro-chemical processing 失效
标题翻译：电化学处理方法和装置
公开(公告)号：US06896776B2
公开(公告)日：2005-05-24
申请号：US09739139
申请日：2000-12-18
申请人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
发明人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
IPC分类号： B24B37/00 , B24B37/04 , C25D5/00 , C25D5/22 , C25D7/12 , H01L21/288 , H01L21/304 , H01L21/321 , H01L21/768 , C25D1/00 , C25D17/00
CPC分类号： C25D7/123 , C25D5/06 , C25D5/22 , C25D17/001 , C25D17/008 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.
摘要翻译：提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。在沉积期间，部分封闭物和基底相对彼此旋转。

18. 发明授权

US07323095B2 Integrated multi-step gap fill and all feature planarization for conductive materials 失效
标题翻译：集成的多步间隙填充和导电材料的所有特征平面化
公开(公告)号：US07323095B2
公开(公告)日：2008-01-29
申请号：US10792069
申请日：2004-03-03
申请人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
发明人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
IPC分类号： C25D21/00 , C25D7/12
CPC分类号： C25D7/123 , C25D5/06 , C25D5/22 , C25D17/001 , C25D17/008 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.
摘要翻译：提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。接下来，将基板定位成更靠近可渗透盘。在沉积期间，部分封闭物和基底相对彼此旋转。

19. 发明授权

US06436267B1 Method for achieving copper fill of high aspect ratio interconnect features 有权
标题翻译：实现高宽比互连特征铜填充的方法
公开(公告)号：US06436267B1
公开(公告)日：2002-08-20
申请号：US09650108
申请日：2000-08-29
申请人： Daniel A. Carl , Barry Chin , Liang Chen , Robin Cheung , Peijun Ding , Yezdi Dordi , Imran Hashim , Peter Hey , Ashok K. Sinha
发明人： Daniel A. Carl , Barry Chin , Liang Chen , Robin Cheung , Peijun Ding , Yezdi Dordi , Imran Hashim , Peter Hey , Ashok K. Sinha
IPC分类号： C23C2802
CPC分类号： H01L21/2885 , H01L21/76877
摘要： One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.
摘要翻译：本发明的一个方面提供一致的金属电镀技术，以在半导体衬底上形成亚微米高纵横比特征的无空隙金属互连。本发明的一个实施方案提供了一种用于在基底上填充亚微米特征的方法，包括反应性预清洗基底，使用高密度等离子体物理气相沉积在基底上沉积阻挡层; 使用高密度等离子体物理气相沉积在阻挡层上沉积种子层; 以及使用高电阻电解质电化学沉积金属，并且在第一周期期间在第一沉积期间施加第一电流密度，然后施加第二电流密度。

20. 发明授权

US5672537A Method for preparing a narrow angle defined trench in a substrate 失效
标题翻译：在衬底中制备窄角限定沟槽的方法
公开(公告)号：US5672537A
公开(公告)日：1997-09-30
申请号：US714276
申请日：1996-09-17
申请人： Daniel A. Carl , Donald M. Kenney , Walter E. Mlynko , Son Van Nguyen
发明人： Daniel A. Carl , Donald M. Kenney , Walter E. Mlynko , Son Van Nguyen
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/763 , H01L21/8242 , H01L27/108 , H01L21/76
CPC分类号： H01L27/10861 , H01L21/763 , Y10S148/05
摘要： Polysilicon (20) in a trench (21) is etched at an angle to produce a conductor within the trench that has shape characteristics which approximate the shadow of the side wall (26) of the trench (21) closest the beam source. Specifically, when the first side wall (26) is closest the beam source and the second side wall (27) is furthest from the beam source, the polysilicon on the first side wall (26) is almost as high as the first side wall (26), while the polysilicon on the more exposed side wall (27) is considerably lower than the first side wall (26) and approximates the shadow of the first side wall (26) on the second side wall (27) relative to the beam. The polysilicon (20) in the trench (21) may be in the shape of a solid angled block approximating the shadow line from the top of side wall (26) to side wall (27); however, it is preferred that the polysilicon take the form of a conformal layer in trench (21) prior to etching such that the polysilicon ultimately has an angled "U" shape which approximates the shadow line. Contact is made to the polysilicon (20) using strap (23) that electrically connects the side wall (26) with the polysilicon (20). Strap (23) is sized such that it does not extend to the opposite side wall (27) of trench (21), thereby avoiding short circuits. Having the polysilicon (20) approximate the shadow line of the etch permits narrowing the distance between adjacent straps (23) and (24) in an array without the risk of creating a short circuit.
摘要翻译：在沟槽（21）中的多晶硅（20）以一定角度蚀刻，以在沟槽内产生具有接近距离光束源的沟槽（21）的侧壁（26）的阴影的形状特征的导体。具体地说，当第一侧壁（26）最靠近光束源和第二侧壁（27）离光束源最远时，第一侧壁（26）上的多晶硅几乎与第一侧壁（而更暴露的侧壁（27）上的多晶硅比第一侧壁（26）低得多，并且相对于光束近似于第二侧壁（27）上的第一侧壁（26）的阴影。沟槽（21）中的多晶硅（20）可以是从侧壁（26）的顶部到侧壁（27）近似阴影线的实心角块的形状; 然而，优选的是，多晶硅在蚀刻之前在沟槽（21）中具有保形层的形式，使得多晶硅最终具有接近阴影线的成角度的“U”形。使用将侧壁（26）与多晶硅（20）电连接的带（23）与多晶硅（20）接触。带（23）的尺寸使得其不延伸到沟槽（21）的相对侧壁（27），从而避免短路。使多晶硅（20）近似于蚀刻线的阴影线允许在阵列中使相邻带（23）和（24）之间的距离变窄，而不会产生短路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式