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11. 发明授权

US5488528A Pole tip structure for thin film magnetic heads 失效
标题翻译：用于薄膜磁头的极尖结构
公开(公告)号：US5488528A
公开(公告)日：1996-01-30
申请号：US292630
申请日：1994-08-18
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.
摘要翻译：提供了具有良好对准的极尖的水平薄膜磁头。头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。第一极尖可以用诸如铜的非磁性材料加盖。在第一和第二极尖之间使用非常窄的侧隙。

12. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

13. 发明授权

US06596468B1 Process to form a flux concentration stitched write head 失效
标题翻译：形成通量集中缝合写头的工艺
公开(公告)号：US06596468B1
公开(公告)日：2003-07-22
申请号：US09659790
申请日：2000-09-11
申请人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
IPC分类号： G03C556
CPC分类号： G11B5/313 , G11B5/3116 , G11B5/3163
摘要： A general process for filling a trench is described with particular emphasis on the formation of step P1 during the manufacture of a magnetic write head. The main feature of this process is that a liftoff mask is used for both the trench formation and the filling processes. As a result of this approach, the area surrounding the trench is not disturbed, the trench depth is not reduced, and the original overall planarity, prior to etching and filling, is maintained.
摘要翻译：描述了用于填充沟槽的一般过程，其特别强调在制造磁写头期间形成步骤P1。该过程的主要特征是使用剥离掩模进行沟槽形成和填充过程。作为这种方法的结果，沟槽周围的区域不受干扰，沟槽深度不减小，并且在蚀刻和填充之前保持原始的整体平面度。

14. 发明授权

US06396671B1 Ruthenium bias compensation layer for spin valve head and process of manufacturing 失效
标题翻译：用于自旋阀头的钌偏置补偿层和制造过程
公开(公告)号：US06396671B1
公开(公告)日：2002-05-28
申请号：US09525670
申请日：2000-03-15
申请人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
摘要翻译：自旋阀结构及其制造方法。阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。这通过在种子层和自由层之间引入约15埃的钌层来实现。这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

15. 发明授权

US06770382B1 GMR configuration with enhanced spin filtering 失效
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06770382B1
公开(公告)日：2004-08-03
申请号：US09443447
申请日：1999-11-22
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.
摘要翻译：自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构例如FCC，BCC等）。金属氧化物缓冲层增强了镜面散射。自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。种子层上重要的金属氧化物缓冲层（缓冲层）。金属氧化物层优选由NiO或α-Fe2O3组成。在金属氧化物层上的自由铁磁层。在自由铁磁层上的非磁性导体间隔层。在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

16. 发明授权

US06430015B2 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06430015B2
公开(公告)日：2002-08-06
申请号：US09773743
申请日：2001-02-02
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
摘要翻译：纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度，层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。在先前结构之上形成第二图案化磁阻（MR）层。在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

17. 发明授权

US06393692B1 Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共轭极设计方法
公开(公告)号：US06393692B1
公开(公告)日：2002-05-28
申请号：US09283840
申请日：1999-04-01
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
IPC分类号： H04R3100
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

18. 发明授权

US5920980A Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：制造具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5920980A
公开(公告)日：1999-07-13
申请号：US810060
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
发明人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/42
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , G11B5/3932 , Y10T29/49044 , Y10T29/49046
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。然后在衬底上形成软相邻层（SAL）。然后在软相邻层（SAL）上形成介电层。然后形成至少部分地使电介质层与磁阻（MR）层接触，其中软相邻层（SAL）和电介质层是平面的。该方法考虑了通过该方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

19. 发明授权

US5652687A Planarized thin film magnetic write head with submicron trackwidth 失效
标题翻译：具有亚微米轨道宽度的平面化薄膜磁写头
公开(公告)号：US5652687A
公开(公告)日：1997-07-29
申请号：US531530
申请日：1995-09-21
申请人： Mao-Min Chen , Kochan Ju , Neil Leslie Robertson , Hugo Alberto Emilio Santini
发明人： Mao-Min Chen , Kochan Ju , Neil Leslie Robertson , Hugo Alberto Emilio Santini
IPC分类号： G11B5/187 , G11B5/23 , G11B5/235 , G11B5/31 , G11B5/147
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译：薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。

20. 发明授权

US5452165A Close packed magnetic head linear array 失效
标题翻译：封闭磁头线性阵列
公开(公告)号：US5452165A
公开(公告)日：1995-09-19
申请号：US214902
申请日：1994-03-16
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
IPC分类号： G11B5/008 , G11B5/012 , G11B5/31 , G11B5/48 , G11B5/56 , G11B5/584 , G11B5/29
CPC分类号： G11B5/3103 , G11B5/3183 , G11B5/4886 , G11B5/4893 , G11B5/56 , G11B5/584 , G11B5/00817 , G11B5/012
摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
摘要翻译：本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。轨道间距为Dsinθ。轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。该厚度可以在3μm左右。具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。这样可以处理高数据速率。本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。可根据需要使用额外的磁头进行伺服控制。

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