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    • 2. 发明授权
    • Method of making pole tip structure for thin film magnetic heads
    • 制造薄膜磁头极头结构的方法
    • US5393376A
    • 1995-02-28
    • US175886
    • 1993-12-30
    • Mao-Min ChenKochan JuNeil L. RobertsonPo-Kang Wang
    • Mao-Min ChenKochan JuNeil L. RobertsonPo-Kang Wang
    • G11B5/31B44C1/22C03C15/00C03C25/00
    • G11B5/3163G11B5/3116G11B5/3183
    • A simplified method is provided for making a thin film magnetic head pole tip structure which includes a sidegap G sandwiched between pole tips PT1 and PT2. The method includes depositing bottom and top seedlayers with an insulation layer sandwiched therebetween. The pole tip PT2 is frame plated on top of the top seedlayer with top and bottom film surfaces which are bounded in part by a pair of spaced-apart sidewalls. The second seedlayer and preferably a depth portion of the insulation layer are removed with the exception of width portions of these layers below the pole tip PT1. A gap insulation layer is deposited on a sidewall of the pole tip PT1 to form the sidegap. The insulation layer with the exception of a portion of an insulation layer below the pole tip PT1 is removed to expose a portion of the bottom seedlayer adjacent to the pole tip PT1 where the pole tip PT2 is to be formed. The pole tip PT2 is then frame plated on top of the exposed portion of the first seedlayer adjacent to the sidegap to complete the desired thin film magnetic head.
    • 提供了一种制造薄膜磁头极尖端结构的简化方法,其包括夹在极尖PT1和PT2之间的侧隙G。 该方法包括沉积具有夹在其间的绝缘层的底部和顶部种子层。 极尖PT2被框架镀在顶部种子层的顶部上,顶部和底部膜表面部分地由一对间隔开的侧壁限定。 除了绝缘层的深度部分之外,除了这些层在极端PT1下方的宽度部分之外,除去第二种子层。 间隙绝缘层沉积在极尖PT1的侧壁上以形成侧隙。 去除绝缘层,绝缘层除极点PT1下方的绝缘层除外以露出与要形成极尖PT2的极尖PT1相邻的底部种子层的一部分。 然后将极端PT2框架电镀在与侧隙相邻的第一种子层的暴露部分的顶部上,以完成所需的薄膜磁头。
    • 5. 发明授权
    • Single stripe magnetoresistive (MR) head
    • 单条磁阻(MR)头
    • US06373667B1
    • 2002-04-16
    • US09637208
    • 2000-08-14
    • Cherng-Chyi HanMao-Min ChenCheng Tzong HorngPo-Kang WangChyu Jiuh TorngKochan JuYimin Guo
    • Cherng-Chyi HanMao-Min ChenCheng Tzong HorngPo-Kang WangChyu Jiuh TorngKochan JuYimin Guo
    • G11B5127
    • B82Y25/00G01R33/093G11B5/3903G11B5/3932Y10T29/49048
    • A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
    • 一种用于制造软相邻层(SAL)磁阻(MR)传感器元件和若干软相邻层(SAL)磁阻(MR))传感器元件的方法,其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层,其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻(MR)层。 还在衬底上形成软相邻层(SAL),其中软相邻层(SAL)具有软相邻层(SAL)的第一表面和软相邻层(SAL)的第二表面。 软相邻层(SAL)的第一表面接触电介质层的第二表面。 最后,还在衬底上形成横向磁偏置层,横向磁偏置层接触软相邻层(SAL)的第二表面,并且其中介电层,磁阻(MR)层中的至少一个 ,软相邻层(SAL)和横向磁偏置层是使用蚀刻掩模形成的图案层,其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层(SAL)之间的磁阻(MR)层形成的软相邻层(SAL)磁阻(MR)传感器元件。 类似地,本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层(SAL)磁阻(MR)传感器元件。
    • 6. 发明授权
    • Close packed magnetic head linear array
    • 封闭磁头线性阵列
    • US5452165A
    • 1995-09-19
    • US214902
    • 1994-03-16
    • Mao-Min ChenKochan JuMohamad T. KrounbiDenny D. TangPo-Kang Wang
    • Mao-Min ChenKochan JuMohamad T. KrounbiDenny D. TangPo-Kang Wang
    • G11B5/008G11B5/012G11B5/31G11B5/48G11B5/56G11B5/584G11B5/29
    • G11B5/3103G11B5/3183G11B5/4886G11B5/4893G11B5/56G11B5/584G11B5/00817G11B5/012
    • The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
    • 本发明包括多个薄膜磁头,其以相邻磁头之间的间隔D布置成线性阵列。 与正常的煎饼型磁头相反,磁头的极片与并排的关系定位。 线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。 轨道间距为Dsinθ。 轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。 该厚度可以在3μm左右。 具有这样的极尖厚度,线阵列中每个磁头的轨道间距可以是3-4μm。 然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。 写入信号被同时馈送到头部,或者读取信号被同时馈送到头部。 这样可以处理高数据速率。 本发明还提供相邻头部之间的不同方位角,以最小化由轨道重合失调引起的轨道之间的串扰。 可根据需要使用额外的磁头进行伺服控制。