专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5144633A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5144633A
公开(公告)日：1992-09-01
申请号：US704969
申请日：1991-05-23
申请人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
发明人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2059 , H01S5/2205 , H01S5/32325
摘要： A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.
摘要翻译：内条型的异质结构半导体激光器包括第一导电类型的（Al x Ga 1-x）0.5 In 0.5 P第一包层，Ga 0.5 In 0.5 P或（Al x Ga 1-x）0.5 In 0.5 P活性层，（ Al x Ga 1-x）0.5 In 0.5 P第二导电类型的不同于第一导电类型的第二包层，AlInP或（Al x Ga 1-x）0.5 In 0.5 P限制层或具有条状开口并具有折射率指数低于第一包覆层的折射率，并且在GaAs衬底上依次形成具有比第二包覆层的折射率低的第一包层的带隙大的带隙的上包层。此外，活性层的宽度可以变窄为条状结构。因此，半导体激光器的像散变小，激光作用的阈值变小。还公开了这种半导体激光器的制造方法。

12. 发明授权

US06777253B2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 有权
标题翻译：半导体制造方法，半导体衬底的制造方法以及半导体发光器件
公开(公告)号：US06777253B2
公开(公告)日：2004-08-17
申请号：US10017389
申请日：2001-12-18
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0
摘要翻译：制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0

13. 发明授权

US06326638B1 Semiconductor light emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06326638B1
公开(公告)日：2001-12-04
申请号：US09080121
申请日：1998-05-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L2715
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

14. 发明授权

US07470608B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07470608B2
公开(公告)日：2008-12-30
申请号：US11359480
申请日：2006-02-23
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/44
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

15. 发明授权

US07030417B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07030417B2
公开(公告)日：2006-04-18
申请号：US10633040
申请日：2003-08-04
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

16. 发明授权

US07368766B2 Semiconductor light emitting element and method for fabricating the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07368766B2
公开(公告)日：2008-05-06
申请号：US10891968
申请日：2004-07-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L31/072
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

17. 发明申请

US20060145165A1 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20060145165A1
公开(公告)日：2006-07-06
申请号：US11359480
申请日：2006-02-23
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

18. 发明申请

US20090159924A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20090159924A1
公开(公告)日：2009-06-25
申请号：US12391531
申请日：2009-02-24
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在活性层的c面产生各向异性应变。

19. 发明申请

US20070228395A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20070228395A1
公开(公告)日：2007-10-04
申请号：US11759326
申请日：2007-06-07
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

20. 发明授权

US06861672B2 Semiconductor light emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06861672B2
公开(公告)日：2005-03-01
申请号：US10011552
申请日：2001-11-06
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式