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11. 发明授权

US08178837B2 Logical CAD navigation for device characteristics evaluation system 有权
标题翻译：设备特征评估系统的逻辑CAD导航
公开(公告)号：US08178837B2
公开(公告)日：2012-05-15
申请号：US12728562
申请日：2010-03-22
申请人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
发明人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G06T7/001 , G06T2200/24 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817 , Y10S715/964
摘要： A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.
摘要翻译：提供了用于容易地确定缺陷位置的导航系统。在CAD导航到缺陷位置的情况下，代替用于指示电路设计的物理信息的CAD数据，以CAD格式创建用于指示缺陷位置的逻辑信息。具体地，通过用软件将诸如矩形，字符或线的标记附加到电子显微镜图像上，使用所需的最小信息进行快速导航。通过使用创建的CAD数据，执行使用相同设备和CAD导航到异构设备的重新导航。

12. 发明申请

US20070124713A1 Logical CAD navigation for device characteristics evaluation system 有权
标题翻译：设备特征评估系统的逻辑CAD导航
公开(公告)号：US20070124713A1
公开(公告)日：2007-05-31
申请号：US11583983
申请日：2006-10-20
申请人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
发明人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
IPC分类号： G06F17/50
CPC分类号： G06T7/001 , G06T2200/24 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817 , Y10S715/964
摘要： A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.
摘要翻译：提供了用于容易地确定缺陷位置的导航系统。在CAD导航到缺陷位置的情况下，代替用于指示电路设计的物理信息的CAD数据，以CAD格式创建用于指示缺陷位置的逻辑信息。具体地，通过用软件将诸如矩形，字符或线的标记附加到电子显微镜图像上，使用所需的最小信息进行快速导航。通过使用创建的CAD数据，执行使用相同设备和CAD导航到异构设备的重新导航。

13. 发明授权

US5972116A Method and apparatus for producing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5972116A
公开(公告)日：1999-10-26
申请号：US579851
申请日：1995-12-28
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/304 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.
摘要翻译：在使用双管反应器的半导体器件的制造方法中，将惰性气体供给到垂直反应管中，将反应气体引入到垂直反应管中，惰性气体通过内部形成的环状通路排出管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。为了减小颗粒的数量和尺寸，晶片向上移位，然后定位在与内管的顶端基本相同或高于内管的水平面上，并将反应气体引入垂直反应管中或高于晶片的位置。此外，使惰性气体从内管的底部朝向如上定位的晶片流动。结果，阻止反应气体进入内管，并且可以减少颗粒的产生。

14. 发明授权

US4581622A UV erasable EPROM with UV transparent silicon oxynitride coating 失效
标题翻译： UV可擦除EPROM与UV透明氧氮化硅涂层
公开(公告)号：US4581622A
公开(公告)日：1986-04-08
申请号：US578992
申请日：1984-02-13
申请人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
发明人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
IPC分类号： H01L21/318 , C23C16/30 , G11C16/02 , G11C17/00 , H01L21/314 , H01L21/56 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/51 , H01L29/788 , H01L29/792 , G11C11/40 , H01L27/10 , H01L27/14 , H01L21/94
CPC分类号： H01L29/518 , C23C16/308 , H01L21/3144 , H01L21/3145 , H01L21/56 , H01L23/291 , H01L23/3171 , H01L29/7881 , H01L2924/0002 , Y10S148/043 , Y10S148/081 , Y10S148/114 , Y10S438/958 , Y10S438/972
摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

15. 发明授权

US4503315A Semiconductor device with fuse 失效
标题翻译：带保险丝的半导体器件
公开(公告)号：US4503315A
公开(公告)日：1985-03-05
申请号：US453099
申请日：1982-12-27
申请人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
发明人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
IPC分类号： G11C17/06 , G11C17/14 , H01L21/82 , H01L23/525 , H01L27/10 , H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002
摘要： A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.
摘要翻译：一种具有熔丝的半导体器件，包括具有至少一个台阶的绝缘层。绝缘层上的可熔薄膜穿过该步骤，并且在可熔膜，台阶和绝缘层上形成覆盖膜。当穿过该台阶的可熔膜的部分被激光束照射时，绝缘层上表面上的可熔膜的部分熔化并流到绝缘层的下表面，而不形成孔，从而将可熔体电影在一步。

16. 发明授权

US4412388A Method for drying semiconductor substrates 失效
标题翻译：干燥半导体衬底的方法
公开(公告)号：US4412388A
公开(公告)日：1983-11-01
申请号：US218802
申请日：1980-12-22
申请人： Mikio Takagi , Hajime Kamioka
发明人： Mikio Takagi , Hajime Kamioka
IPC分类号： H01L21/304 , F26B3/347 , F26B21/14 , G03F7/38 , G03F7/40 , H01L21/00 , H01L21/68 , F26B3/34
CPC分类号： H01L21/67034 , F26B21/14 , F26B3/347 , G03F7/38 , G03F7/40 , H01L21/68
摘要： A method for drying semiconductor substrates wherein a plurality of semiconductor substrates are irradiated with electromagnetic waves emitted from a waveguide in a non-reactive atmosphere of normal atmospheric pressure while the semiconductor substrates are positioned so that the predominant faces thereof substantially form right angles to the face of an opening of the waveguide.
摘要翻译：一种用于干燥半导体衬底的方法，其中多个半导体衬底在正常大气压的非反应性气氛中从波导发射的电磁波照射，同时半导体衬底被定位成使得其主要面基本上与面部成直角的波导的开口。

17. 发明授权

US4394401A Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film 失效
标题翻译：磷硅玻璃薄膜等离子体增强化学气相沉积方法
公开(公告)号：US4394401A
公开(公告)日：1983-07-19
申请号：US290978
申请日：1981-08-07
申请人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
IPC分类号： C01B33/113 , C03C17/02 , C03C17/245 , C23C16/30 , C23C16/40 , C23C16/50 , C23C16/509 , C30B25/02 , C30B29/18 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/31625
摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
摘要翻译：公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

18. 发明授权

US4275094A Process for high pressure oxidation of silicon 失效
标题翻译：硅高压氧化工艺
公开(公告)号：US4275094A
公开(公告)日：1981-06-23
申请号：US955755
申请日：1978-10-30
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.
摘要翻译：一种用于硅的高压氧化的方法，包括以下步骤：将硅晶片和氧化物质插入石英胶囊中，通过熔融气密地密封石英胶囊，并加热石英胶囊以在其中产生高压氧化气氛，并形成硅晶片上的氧化膜，而没有氧化气氛的流动。在使用水作为氧化物质的情况下，水被冻结，石英胶囊的内部空间在密封操作之前被排出。此外，在例如氧化气体的情况下，氧气用作氧化物质，如果气体的压力高于环境压力，则在密封操作之前，将石英胶囊冷却以将气体压力降低到低于环境压力的压力。

19. 发明授权

US08097541B2 Method for surface treating semiconductor 有权
标题翻译：半导体表面处理方法
公开(公告)号：US08097541B2
公开(公告)日：2012-01-17
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/302
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译：半导体硅晶片上的天然氧化物膜在50℃以下的温度下被干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。在氢键处理之后，将温度为0〜-30℃的惰性气体注入反应容器5和/或其中去除了自然氧化膜的处理制备容器21。

20. 发明授权

US07618753B2 Photomask blank, photomask and method for producing those 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US07618753B2
公开(公告)日：2009-11-17
申请号：US11662479
申请日：2005-08-10
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： C23F4/00 , G03F1/32 , G03F1/54 , G03F1/80
摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要翻译：在光掩模基板的一个主表面上设置金属膜作为遮光层。通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基干蚀刻（F-干蚀刻）。在遮光层上，作为抗反射层的金属化合物膜。金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻蚀刻（基于F）。

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