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11. 发明申请

US20050135402A1 Data transfer apparatus 审中-公开
标题翻译：数据传输装置
公开(公告)号：US20050135402A1
公开(公告)日：2005-06-23
申请号：US10998136
申请日：2004-11-29
申请人： Kenichi Kawaguchi , Yoshiteru Mino
发明人： Kenichi Kawaguchi , Yoshiteru Mino
IPC分类号： G06T1/60 , G06F13/38 , H04J3/26 , H04N5/00 , H04N21/458
CPC分类号： H04N21/4583
摘要： A buffer is provided between an image processor and image I/O unit and a shared memory to be accessed by those units in common, and the buffer is controlled so as to be used only for a specific access, and data transmission to the shared memory is also controlled. With respect to a single transmission request from the image processor and a burst transmission request from the image I/O unit, a selector is controlled such that the single transmission data is retained in the buffer and that the burst transmission to the shared memory is executed.
摘要翻译：在图像处理器和图像I / O单元之间提供缓冲器和由这些单元共享的共享存储器，并且缓冲器被控制以仅被用于特定访问，并且数据传输到共享存储器也受到控制。对于来自图像处理器的单个传输请求和来自图像I / O单元的突发传输请求，控制选择器使得单个传输数据保留在缓冲器中，并且执行到共享存储器的突发传输。

12. 发明授权

US06623804B1 Melting and impregnating apparatus method of manufacturing linear composite material and linear composite material 有权
标题翻译：熔融浸渍设备制造线性复合材料和线性复合材料的方法
公开(公告)号：US06623804B1
公开(公告)日：2003-09-23
申请号：US09667305
申请日：2000-09-25
申请人： Kenichi Kawaguchi , Hitoshi Ushijima , Takeshi Kamata
发明人： Kenichi Kawaguchi , Hitoshi Ushijima , Takeshi Kamata
IPC分类号： B05D118
CPC分类号： D01D11/06 , C23C2/006
摘要： A melting and impregnating apparatus includes an impregnating tank having an inlet sealing portion in the bottom portion thereof, an outlet sealing portion in the upper portion thereof and a drawing portion disposed between the sealing portions; a raw-material heating tank allowed to communicate with the impregnating tank through a heating passage; and pressurizing means for maintaining pressurized states of the inside portions of the impregnating tank and the pressurizing means.
摘要翻译：熔融浸渍装置包括：浸渍槽，其底部具有入口密封部分，其上部具有出口密封部分和设置在密封部分之间的拉伸部分; 允许原料加热槽通过加热通道与浸渍槽连通; 以及用于保持浸渍罐和加压装置的内部的加压状态的加压装置。

13. 发明授权

US08809906B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US08809906B2
公开(公告)日：2014-08-19
申请号：US13613177
申请日：2012-09-13
申请人： Lei Zhu , Shigeaki Sekiguchi , Shinsuke Tanaka , Kenichi Kawaguchi
发明人： Lei Zhu , Shigeaki Sekiguchi , Shinsuke Tanaka , Kenichi Kawaguchi
IPC分类号： H01L31/102
CPC分类号： G02B6/122 , G02B6/29352 , G02B2006/121 , G02F1/025 , H01L31/105
摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
摘要翻译：半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙和第三半导体层。

14. 发明授权

US08304547B2 Azolecarboxamide compound or salt thereof 有权
标题翻译：偶氮甲酰胺化合物或其盐
公开(公告)号：US08304547B2
公开(公告)日：2012-11-06
申请号：US12739433
申请日：2008-10-23
申请人： Keizo Sugasawa , Kenichi Kawaguchi , Takaho Nomura , Shunichiro Matsumoto , Takashi Shin , Hidenori Azami , Tomoaki Abe , Akira Suga , Ryushi Seo , Masayuki Tanahashi , Toru Watanabe
发明人： Keizo Sugasawa , Kenichi Kawaguchi , Takaho Nomura , Shunichiro Matsumoto , Takashi Shin , Hidenori Azami , Tomoaki Abe , Akira Suga , Ryushi Seo , Masayuki Tanahashi , Toru Watanabe
IPC分类号： C07D211/68 , C07D221/20 , C07D491/20 , C07D413/14 , C07D239/09 , A61K31/535 , A61K31/505 , A61K31/44 , A61K31/445
CPC分类号： C07D263/34 , C07D263/48 , C07D277/20 , C07D277/56 , C07D401/14 , C07D403/12 , C07D407/12 , C07D413/04 , C07D413/12 , C07D413/14 , C07D417/04 , C07D417/12 , C07D417/14 , C07D491/08 , C07D491/107 , C07D491/113 , C07D491/20 , C07D495/04 , C07D498/10
摘要： [Object] To provide a therapeutic and/or prophylactic agent for urinary frequency, urinary urgency, and urinary incontinence associated with various lower urinary tract diseases including overactive bladder, various lower urinary tract diseases accompanied by lower urinary tract pain, such as interstitial cystitis, chronic prostatitis, and the like, and various diseases accompanied by pain, based on an excellent trkA receptor inhibitory action.[Means for Solution] A novel azolecarboxamide compound in which a thiazole ring or an oxazole ring is bonded to a benzene ring, a pyridine ring, a pyridazine ring, a thiophene ring, a pyrazole ring or a pyrrole ring through carboxamide, or a salt thereof is confirmed to have a potent trkA receptor inhibitory activity, and found to be capable of being used as a therapeutic and/or prophylactic agent which is excellent in efficacy and safety for urinary frequency, urinary urgency, and urinary incontinence associated with various lower urinary tract diseases including overactive bladder, various lower urinary tract diseases accompanied by lower urinary tract pain, such as interstitial cystitis, chronic prostatitis, and the like, and various diseases accompanied by pain, thereby completing the present invention.
摘要翻译：本发明提供一种用于与各种下尿路疾病（包括膀胱过度活动症，伴有下尿路疼痛，诸如间质性膀胱炎等）的各种下尿路疾病相关的尿频，尿急和尿失禁的治疗和/或预防剂，慢性前列腺炎等，以及伴有疼痛的各种疾病，基于优异的trkA受体抑制作用。 [解决方案]通过甲酰胺或其盐将噻唑环或恶唑环与苯环，吡啶环，哒嗪环，噻吩环，吡唑环或吡咯环结合的新型偶氮甲酰胺化合物被证实具有强的trkA受体抑制活性，发现能够用作治疗和/或预防剂，其对于尿频，尿急和与各种下尿路相关的尿失禁的功效和安全性优异包括膀胱活动过度，伴有尿路下下尿路疼痛的下尿路疾病，如间质性膀胱炎，慢性前列腺炎等多种疾病，伴有疼痛的各种疾病，从而完成本发明。

15. 发明授权

US07968868B2 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07968868B2
公开(公告)日：2011-06-28
申请号：US12654016
申请日：2009-12-08
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

16. 发明授权

US07829880B2 Quantum dot semiconductor device 有权
标题翻译：量子点半导体器件
公开(公告)号：US07829880B2
公开(公告)日：2010-11-09
申请号：US12047806
申请日：2008-03-13
申请人： Hiroji Ebe , Kenichi Kawaguchi , Ken Morito , Yasuhiko Arakawa
发明人： Hiroji Ebe , Kenichi Kawaguchi , Ken Morito , Yasuhiko Arakawa
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/3412 , H01S5/5009 , H01S2301/04 , Y10S438/962
摘要： A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.
摘要翻译：量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于增益谱在所需的工作温度范围内。

17. 发明申请

US20100249088A1 AZOLECARBOXAMIDE COMPOUND OR SALT THEREOF 有权
标题翻译： AZOLECARBOXAMIDE化合物或其盐
公开(公告)号：US20100249088A1
公开(公告)日：2010-09-30
申请号：US12739433
申请日：2008-10-23
申请人： Keizo Sugasawa , Kenichi Kawaguchi , Takaho Nomura , Shunichiro Matsumoto , Takashi Shin , Hidenori Azami , Tomoaki Abe , Akira Suga , Ryushi Seo , Masayuki Tanahashi , Toru Watanabe
发明人： Keizo Sugasawa , Kenichi Kawaguchi , Takaho Nomura , Shunichiro Matsumoto , Takashi Shin , Hidenori Azami , Tomoaki Abe , Akira Suga , Ryushi Seo , Masayuki Tanahashi , Toru Watanabe
IPC分类号： A61K31/4545 , C07D413/14 , C07D417/14 , A61P13/02 , A61P13/10 , A61K31/5377 , A61K31/55 , A61K31/551 , A61K31/553 , A61K31/397 , A61P13/00 , A61P13/08
CPC分类号： C07D263/34 , C07D263/48 , C07D277/20 , C07D277/56 , C07D401/14 , C07D403/12 , C07D407/12 , C07D413/04 , C07D413/12 , C07D413/14 , C07D417/04 , C07D417/12 , C07D417/14 , C07D491/08 , C07D491/107 , C07D491/113 , C07D491/20 , C07D495/04 , C07D498/10
摘要： [Object] To provide a therapeutic and/or prophylactic agent for urinary frequency, urinary urgency, and urinary incontinence associated with various lower urinary tract diseases including overactive bladder, various lower urinary tract diseases accompanied by lower urinary tract pain, such as interstitial cystitis, chronic prostatitis, and the like, and various diseases accompanied by pain, based on an excellent trkA receptor inhibitory action.[Means for Solution] A novel azolecarboxamide compound in which a thiazole ring or an oxazole ring is bonded to a benzene ring, a pyridine ring, a pyridazine ring, a thiophene ring, a pyrazole ring or a pyrrole ring through carboxamide, or a salt thereof is confirmed to have a potent trkA receptor inhibitory activity, and found to be capable of being used as a therapeutic and/or prophylactic agent which is excellent in efficacy and safety for urinary frequency, urinary urgency, and urinary incontinence associated with various lower urinary tract diseases including overactive bladder, various lower urinary tract diseases accompanied by lower urinary tract pain, such as interstitial cystitis, chronic prostatitis, and the like, and various diseases accompanied by pain, thereby completing the present invention.
摘要翻译：本发明提供一种用于与各种下尿路疾病（包括膀胱过度活动症，伴有下尿路疼痛，诸如间质性膀胱炎等）的各种下尿路疾病相关的尿频，尿急和尿失禁的治疗和/或预防剂，慢性前列腺炎等，以及伴有疼痛的各种疾病，基于优异的trkA受体抑制作用。 [解决方案]通过甲酰胺或其盐将噻唑环或恶唑环与苯环，吡啶环，哒嗪环，噻吩环，吡唑环或吡咯环结合的新型偶氮甲酰胺化合物被证实具有强的trkA受体抑制活性，发现能够用作治疗和/或预防剂，其对于尿频，尿急和与各种下尿路相关的尿失禁的功效和安全性优异包括膀胱活动过度，伴有尿路下下尿路疼痛的下尿路疾病，如间质性膀胱炎，慢性前列腺炎等多种疾病，伴有疼痛的各种疾病，从而完成本发明。

18. 发明授权

US07683392B2 Semiconductor device with anisotropy-relaxed quantum dots 有权
标题翻译：具有各向异性松弛量子点的半导体器件
公开(公告)号：US07683392B2
公开(公告)日：2010-03-23
申请号：US11390151
申请日：2006-03-28
申请人： Kenichi Kawaguchi
发明人： Kenichi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L29/045 , H01L29/201 , H01S5/22 , H01S5/2201 , H01S5/227 , H01S5/3054 , H01S5/3412 , H01S5/34306
摘要： A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [001] direction to a [1 −10] direction in a (001) plane; and semiconductor quantum dots made of InAs1-xSbx (0
摘要翻译：半导体量子点器件包括：（001）面中主表面法线从[001]方向向[1-10]方向倾斜的倾斜InP衬底; 和由InAs1-xSbx（0

19. 发明授权

US07666873B2 N-phenyl-(2R,5S)dimethylpiperazine derivative 有权
标题翻译： N-苯基 - （2R，5S）二甲基哌嗪衍生物
公开(公告)号：US07666873B2
公开(公告)日：2010-02-23
申请号：US11861327
申请日：2007-09-26
申请人： Nobuaki Taniguchi , Masakazu Imamura , Masahiko Hayakawa , Kenichi Kawaguchi , Takenori Kimura , Isao Kinoyama , Hiroyuki Kaizawa , Minoru Okada , Takashi Furutani
发明人： Nobuaki Taniguchi , Masakazu Imamura , Masahiko Hayakawa , Kenichi Kawaguchi , Takenori Kimura , Isao Kinoyama , Hiroyuki Kaizawa , Minoru Okada , Takashi Furutani
IPC分类号： A61K31/497 , C07D401/00
CPC分类号： C07D213/75 , C07D213/84 , C07D239/42 , C07D295/215
摘要： The present invention relates to a novel N-phenyl-(2R,5S)dimethylpiperazine derivatives useful as antiandrogenic agent which exhibits a sufficient prostate gland reducing effect as compared with conventional compounds and are excellent in oral activity. The compound of the present application is useful in preventing or treating prostate cancer, benign prostatic hyperplasia, and the like. The present invention also provides a novel intermediate useful in producing the compound of the present invention.
摘要翻译：本发明涉及用作抗雄激素剂的新型N-苯基 - （2R，5S）二甲基哌嗪衍生物，其与常规化合物相比表现出足够的前列腺减少效果，口服活性优异。本申请的化合物可用于预防或治疗前列腺癌，良性前列腺增生等。本发明还提供了可用于制备本发明化合物的新型中间体。

20. 发明授权

US07663139B2 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07663139B2
公开(公告)日：2010-02-16
申请号：US11444420
申请日：2006-06-01
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

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