专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20060185558A1 Pigment dispersants and their use 有权
标题翻译：颜料分散剂及其用途
公开(公告)号：US20060185558A1
公开(公告)日：2006-08-24
申请号：US11354112
申请日：2006-02-15
申请人： Hiroaki Saikatsu , Hiromitsu Yanagimoto , Naoto Kamata , Kazuhito Ooki , Yutaka Miura , Shigeru Sakamoto , Akio Yoshida , Michiei Nakamura
发明人： Hiroaki Saikatsu , Hiromitsu Yanagimoto , Naoto Kamata , Kazuhito Ooki , Yutaka Miura , Shigeru Sakamoto , Akio Yoshida , Michiei Nakamura
IPC分类号： C08K5/00 , C09B48/00 , C09B27/00 , G03F1/00
CPC分类号： C09B67/0008 , C09B67/0033 , C09B67/0039 , G03F7/0007
摘要： A pigment dispersant contains the following component (a) alone or the following components (a) and (b) in combination: Component (a): a composite pigment formed of a diketopyrrolopyrrole pigment having a sulfonic group and another diketopyrrolopyrrole pigment having no sulfonic group, wherein the number of sulfonic group per molecule of the diketopyrrolopyrrole pigments in the composite pigment is from 0.05 to 0.5; and Component (b): a pigment other than the component (a), wherein the pigment has a sulfonic group or its metal salt, ammonium salt or amine salt. Also disclosed are a colored composition for color filters, a process for the fabrication of a color filter, the color filter fabricated by the process, an image display device including the color filter, and an information communication equipment including the image display device. These colored composition, process, color filter, image display device and information communication equipment all make either direct or indirect use of the pigment dispersant.
摘要翻译：颜料分散剂包含以下组分（a）单独或以下组分（a）和（b）组合：组分（a）：由具有磺酸基的二酮吡咯并吡咯颜料和不具有磺酸基的另一个二酮吡咯并吡咯颜料形成的复合颜料其中复合颜料中每分子二酮吡咯并吡咯颜料的磺酸基数为0.05〜0.5; 和组分（b）：除了组分（a）之外的颜料，其中所述颜料具有磺酸基或其金属盐，铵盐或胺盐。还公开了用于滤色器的彩色组合物，用于制造滤色器的方法，通过该方法制造的滤色器，包括滤色器的图像显示装置和包括图像显示装置的信息通信设备。这些彩色组合物，工艺，滤色器，图像显示装置和信息通信设备都直接或间接使用颜料分散剂。

12. 发明申请

US20050061377A1 Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 审中-公开
标题翻译：气体处理设备，气体处理方法和气体处理设备的集成阀门单元
公开(公告)号：US20050061377A1
公开(公告)日：2005-03-24
申请号：US10979094
申请日：2004-11-02
申请人： Hayashi Otsuki , Yutaka Miura
发明人： Hayashi Otsuki , Yutaka Miura
IPC分类号： F16K11/085 , F17D1/04 , F17C13/00 , E03B1/00 , E03C1/00 , F16K1/00 , F17D1/00
CPC分类号： F16K11/0856 , F17D1/04 , Y10T137/87885
摘要： A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (257) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (271) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (271) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 257) are perpendicular to the gas line (271).
摘要翻译：用于携带用于成核的WF6气体的工艺气体管线（255），用于承载成核后的用于膜沉积的WF6气体的工艺气体管线（257）在单个接头（280）连接到载气管线（256）。气体管线（271）连接到接头（280），以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。在接头（280）的相对侧延伸的载气管线（256）和气体管线（271）的截面沿直线延伸，并且工艺气体管线（255,257）垂直于气体管线 271）。

13. 发明授权

US5423936A Plasma etching system 失效
标题翻译：等离子体蚀刻系统
公开(公告)号：US5423936A
公开(公告)日：1995-06-13
申请号：US138039
申请日：1993-10-19
申请人： Kazushi Tomita , Yoshikazu Ito , Motohiro Hirano , Akira Nozawa , Hiromitsu Matsuo , Shunichi Iimuro , Shigeki Tozawa , Yutaka Miura
发明人： Kazushi Tomita , Yoshikazu Ito , Motohiro Hirano , Akira Nozawa , Hiromitsu Matsuo , Shunichi Iimuro , Shigeki Tozawa , Yutaka Miura
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/3244 , H01J37/32532 , H01J37/32724 , H01J2237/3347
摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.
摘要翻译：本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

14. 发明授权

US07871788B2 Method of judging grade of malignancy of carcinoma cell using ATBF-1 失效
标题翻译：使用ATBF-1判断癌细胞恶性程度的方法
公开(公告)号：US07871788B2
公开(公告)日：2011-01-18
申请号：US11658784
申请日：2005-07-29
申请人： Yutaka Miura , Makoto Kawaguchi , Hirotaka Iwase , Minoru Hamazaki , Jung Cha-Gyun , Hitoo Nishino
发明人： Yutaka Miura , Makoto Kawaguchi , Hirotaka Iwase , Minoru Hamazaki , Jung Cha-Gyun , Hitoo Nishino
IPC分类号： G01N33/574 , G01N33/53
CPC分类号： G01N33/57496 , C07K16/30 , C12Q1/6883 , C12Q1/6886 , C12Q2600/106 , C12Q2600/112 , C12Q2600/118
摘要： Means for easily determining the grade of malignancy of cancer cells. The amount of ATBF1 in the whole cell structure of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Alternatively, the amount of ATBF1 in the nuclei of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Still alternatively, the amount of ATBF1 in the cytoplasms of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. In a preferred from, at least one of (1) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 10 of an ATBF1 gene, (2) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 11 of an ATBF1 gene, and (3) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 3 of an ATBF1 gene is detected as the amount of ATBF1.
摘要翻译：用于容易确定癌细胞恶性程度的方法。检测从生物体分离出的检测癌细胞的全细胞结构中的ATBF1的量，根据检测结果判断检测癌细胞的恶性程度。或者，检测从活体分离的检测癌细胞的细胞核中的ATBF1的量，根据检测结果判断检测癌细胞的恶性程度。或者，检测从活体分离的检测癌细胞的细胞质中的ATBF1的量，根据检测结果判断检测癌细胞的恶性程度。优选地，（1）与ATBF1基因的外显子10相对应的区域的核内存在量和/或胞质内存在的量中的至少一种，（2）核内存在量和/或胞质内存在的量对应于 ATBF1基因的外显子11，（3）ATBF1基因的外显子3相应的区域的核内存在和/或胞质内存在量被检测为ATBF1的量。

15. 发明授权

US07828016B2 Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 失效
标题翻译：气体处理设备，气体处理方法和气体处理设备的集成阀门单元
公开(公告)号：US07828016B2
公开(公告)日：2010-11-09
申请号：US12081687
申请日：2008-04-18
申请人： Hayashi Otsuki , Yutaka Miura
发明人： Hayashi Otsuki , Yutaka Miura
IPC分类号： F16K11/10
CPC分类号： F16K11/0856 , F17D1/04 , Y10T137/87885
摘要： A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).
摘要翻译：用于携带用于成核的WF6气体的工艺气体管线（255），用于承载成核后用于膜沉积的WF6气体的工艺气体管线（259）在单个接头（280）处接合到载气管线（256）。气体管线（270）连接到接头（280），以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。在接头（280）的相对侧延伸的载气管线（256）和气体管线（270）的部分沿着直线延伸，并且工艺气体管线（255,259）垂直于气体管线 270）。

16. 发明申请

US20090117747A1 Method for Surface Treating Semiconductor 有权
标题翻译：表面处理半导体的方法
公开(公告)号：US20090117747A1
公开(公告)日：2009-05-07
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

17. 发明申请

US20080282977A1 Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 失效
标题翻译：气体处理设备，气体处理方法和气体处理设备的集成阀门单元
公开(公告)号：US20080282977A1
公开(公告)日：2008-11-20
申请号：US12081687
申请日：2008-04-18
申请人： Hayashi Otsuki , Yutaka Miura
发明人： Hayashi Otsuki , Yutaka Miura
IPC分类号： C23C16/54
CPC分类号： F16K11/0856 , F17D1/04 , Y10T137/87885
摘要： A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).
摘要翻译：用于携带用于成核的WF 6气体的工艺气体管线（255），在成核后用于承载用于膜沉积的WF 6气体的工艺气体管线（259）在单个接头（280）连接到载气管线（256）。气体管线（270）连接到接头（280），以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。在接头（280）的相对侧延伸的载气管线（256）和气体管线（270）的部分沿着直线延伸，并且工艺气体管线（255,259）垂直于气体管线 270）。

18. 发明授权

US07393404B2 Pigment dispersants and their use 有权
标题翻译：颜料分散剂及其用途
公开(公告)号：US07393404B2
公开(公告)日：2008-07-01
申请号：US11354112
申请日：2006-02-15
申请人： Hiroaki Saikatsu , Hiromitsu Yanagimoto , Naoto Kamata , Kazuhito Ooki , Yutaka Miura , Shigeru Sakamoto , Akio Yoshida , Michiei Nakamura
发明人： Hiroaki Saikatsu , Hiromitsu Yanagimoto , Naoto Kamata , Kazuhito Ooki , Yutaka Miura , Shigeru Sakamoto , Akio Yoshida , Michiei Nakamura
IPC分类号： G03F1/00 , G03F7/09 , B01F17/32 , C07D487/02 , C08K5/3415 , G02B5/20 , G02B5/22 , G02F1/1335 , G03C7/04 , C09B67/20 , C09B67/00 , C09B67/22 , C09B67/46 , C09B57/00
CPC分类号： C09B67/0008 , C09B67/0033 , C09B67/0039 , G03F7/0007
摘要： A pigment dispersant contains the following component (a) alone or the following components (a) and (b) in combination:Component (a): a composite pigment formed of a diketopyrrolopyrrole pigment having a sulfonic group and another diketopyrrolopyrrole pigment having no sulfonic group, wherein the number of sulfonic group per molecule of the diketopyrrolopyrrole pigments in the composite pigment is from 0.05 to 0.5; andComponent (b): a pigment other than the component (a), wherein the pigment has a sulfonic group or its metal salt, ammonium salt or amine salt.Also disclosed are a colored composition for color filters, a process for the fabrication of a color filter, the color filter fabricated by the process, an image display device including the color filter, and an information communication equipment including the image display device. These colored composition, process, color filter, image display device and information communication equipment all make either direct or indirect use of the pigment dispersant.
摘要翻译：颜料分散剂包含以下组分（a）单独或以下组分（a）和（b）组合：组分（a）：由具有磺酸基的二酮吡咯并吡咯颜料和不具有磺酸基的另一个二酮吡咯并吡咯颜料形成的复合颜料其中复合颜料中每分子二酮吡咯并吡咯颜料的磺酸基数为0.05〜0.5; 和组分（b）：除了组分（a）之外的颜料，其中所述颜料具有磺酸基或其金属盐，铵盐或胺盐。还公开了用于滤色器的彩色组合物，用于制造滤色器的方法，通过该方法制造的滤色器，包括滤色器的图像显示装置和包括图像显示装置的信息通信设备。这些彩色组合物，工艺，滤色器，图像显示装置和信息通信设备都直接或间接使用颜料分散剂。

19. 发明授权

US6110287A Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US6110287A
公开(公告)日：2000-08-29
申请号：US843129
申请日：1997-04-28
申请人： Izumi Arai , Yoshifumi Tahara , Hiroshi Nishikawa , Yoshinobu Mitano , Shunichi Iimuro , Kazuo Fukasawa , Yutaka Miura , Shozo Hosoda
发明人： Izumi Arai , Yoshifumi Tahara , Hiroshi Nishikawa , Yoshinobu Mitano , Shunichi Iimuro , Kazuo Fukasawa , Yutaka Miura , Shozo Hosoda
IPC分类号： C23C16/509 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , C23C16/5096 , H01J37/3244
摘要： A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.
摘要翻译：一种等离子体处理方法，其中将高频电力供应到其中安装有被处理物体的处理室，从而在处理室中产生等离子体，并且在等离子体的气氛中对物体进行处理，其中高频功率受到低频功率的调制。在一个实施例中，通过使用具有随时间变化的电流方向的电力在处理室中产生等离子体，并且待处理物体在等离子体的气氛中被处理，其中具有基本频率的功率为以频率等于基本频率的n倍（n =整数）的频率进行频率调制。在本发明的等离子体处理装置中，当通过形成在电极中的第一气体导入孔将处理气体供给到处理室时，对被保持在对置电极上的被处理物进行等离子体处理。提供了一种电阻，其应用[施加装置]对来自气体导入装置的气体导入孔流向处理室的工艺气体施加阻力，使得当气体导入装置中的过程压力在处理室中设定为0.5乇以下。

20. 发明申请

US20070117864A1 Composition for preventing and treating hepatoma 审中-公开
标题翻译：用于预防和治疗肝癌的组合物
公开(公告)号：US20070117864A1
公开(公告)日：2007-05-24
申请号：US10572945
申请日：2004-12-24
申请人： Kazumi Yagasaki , Yutaka Miura , Daiki Miura , Risto Santti , Niina Saarinen
发明人： Kazumi Yagasaki , Yutaka Miura , Daiki Miura , Risto Santti , Niina Saarinen
IPC分类号： A61K31/365
CPC分类号： A61K36/15 , A23L33/105 , A23V2002/00 , A61K31/365 , C07D307/33 , A23V2200/308 , A23V2250/21
摘要： The present invention provides a liver cancer prophylactic and therapeutic composition, and the present invention relates to a liver cancer prophylactic and therapeutic composition characterized in that this composition contains compounds that have a hepatoma proliferation inhibiting effect as active ingredients, these compounds comprising enterolactone (ENL) or plant lignan precursors of the same; a liver cancer prophylactic and therapeutic drug characterized in that this drug comprises compounds that have a hepatoma proliferation inhibiting effect, these compounds being enterolactone (ENL) or plant lignan precursors of the same, and a pharmacologically permissible carrier component; and a functional food product material characterized in that this food product material is formed by mixing compounds that have a hepatoma proliferation inhibiting effect, these compounds being enterolactone (ENL) or plant lignan precursors of the same as functional components with a food product material.
摘要翻译：本发明提供肝癌预防和治疗组合物，本发明涉及肝癌预防和治疗组合物，其特征在于该组合物含有作为活性成分具有肝癌增殖抑制作用的化合物，这些化合物包括肠内酯（ENL）或植物木酚素前体; 一种肝癌预防和治疗药物，其特征在于该药物包括具有肝癌增殖抑制作用的化合物，这些化合物是肠内酯（ENL）或其植物木酚素前体，以及药理学上允许的载体组分; 以及功能食品，其特征在于，通过混合具有肝癌增殖抑制作用的化合物，这些化合物是肠内酯（ENL）或与功能组分相同的植物木酚素前体与食品材料形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式