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    • 14. 发明授权
    • Methods of manufacturing liquid crystal display devices with reduced
susceptibility to electrostatic discharge faults
    • 制造具有降低的静电放电故障敏感性的液晶显示装置的方法
    • US5805246A
    • 1998-09-08
    • US855301
    • 1997-05-13
    • Jung-Hee LeeKweon-Sam Hong
    • Jung-Hee LeeKweon-Sam Hong
    • G02F1/133G02F1/1362G02F1/1333G02F1/13G02F1/1345
    • G02F1/136204
    • Methods of manufacturing liquid crystal display devices with reduced susceptibility to electrostatic discharge faults include delaying the removal of an electrostatic shorting bar from a liquid crystal display substrate until after a display driver has been electrically coupled to the control lines (e.g., data and gate lines) on the display substrate. Thus, in contrast to the prior art, electrostatic discharge faults can also be prevented during the step of electrically coupling display drivers to the display substrate. A preferred method includes the steps of forming a first substrate comprising a thin-film transistor display region, a plurality of data and gate lines coupled to the display region and an electrostatic shorting bar electrically interconnecting the data and gate lines together, and then electrically connecting a second substrate (e.g., printed circuit board) comprising a display driver circuit, before electrically disconnecting the electrostatic shorting bar from the plurality of control lines. Here, the step of electrically disconnecting the shorting bar from the control lines is preferably performed by removing the shorting bar from the first substrate using a cutting tool such as a saw or laser. The step of removing the shorting bar is also preferably performed at an edge of the first substrate which extends opposite an edge to which the second substrate (containing the driver circuit) is attached.
    • 制造对静电放电故障敏感性降低的液晶显示装置的方法包括延迟静电短路棒从液晶显示基板的去除,直到显示驱动器已经电耦合到控制线(例如,数据和栅极线) 在显示基板上。 因此,与现有技术相反,在将显示器驱动器电耦合到显示器基板的步骤期间,也可以防止静电放电故障。 优选的方法包括以下步骤:形成包括薄膜晶体管显示区域,耦合到显示区域的多个数据和栅极线的第一衬底和将数据和栅极线电连接在一起的静电短路棒,然后电连接 在将所述静电短路杆与所述多个控制线电气断开之前,包括显示驱动器电路的第二基板(例如,印刷电路板)。 这里,短路棒与控制线电气断开的步骤优选通过使用诸如锯或激光器的切割工具从第一基板去除短路棒来进行。 去除短路棒的步骤也优选地在与第二基板(包含驱动电路)相连的边缘相对延伸的第一基板的边缘处进行。
    • 16. 发明申请
    • APPARATUS AND METHOD FOR ESTIMATING TIME STAMP
    • 估计时间戳的装置和方法
    • US20120155497A1
    • 2012-06-21
    • US13328269
    • 2011-12-16
    • Seung-Woo LeeBhum-Cheol LeeJung-Hee Lee
    • Seung-Woo LeeBhum-Cheol LeeJung-Hee Lee
    • H04J3/06
    • H04J3/0697H04J3/0638H04J3/0658H04J3/0667
    • An apparatus includes a difference extraction unit to extract a difference between a second time stamp value, which is obtained by adjusting a first time stamp value that is measured at a time of arrival of a synchronization message transmitted by the master at a Layer 3 to be synchronized in frequency with a clock of the master, and a third time stamp value, which is measured at a time of departure of the synchronization message from the master; a minimum filter to select a minimum from one or more difference values extracted by the difference extraction unit; and a delay variation calculation unit to estimate a time of arrival of a current synchronization message at the Layer 3 based on the selected minimum and calculate a delay variation.
    • 一种装置,包括差分提取单元,用于提取第二时间标记值之间的差异,该第二时间戳值是通过调整由第三层发送的由主机发送的同步消息的到达时所测量的第一时间戳值而获得的 频率与主机的时钟同步,以及第三时间戳值,其在与主机的同步消息的离开时测量; 最小滤波器,用于从由所述差分提取单元提取的一个或多个差值中选择最小值; 以及延迟变化计算单元,基于所选择的最小值来估计当前同步消息在层3的到达时间,并计算延迟变化。
    • 19. 发明授权
    • Method of fabricating a semiconductor substrate
    • 半导体衬底的制造方法
    • US5773353A
    • 1998-06-30
    • US564505
    • 1995-11-29
    • Oh-Joon KwonJung-Hee LeeYong-Hyun Lee
    • Oh-Joon KwonJung-Hee LeeYong-Hyun Lee
    • H01L21/18H01L21/762H01L21/76
    • H01L21/76264H01L21/7627H01L21/76283Y10S438/96
    • A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield. Silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.
    • 一种半导体衬底及其制造方法,其特征在于,所形成的有源区域由填充有任何导电多晶硅的沟槽限定,其中大量外延层的任何部分在其上生长在 任何导电硅衬底和多孔径氧化硅层由用于沟槽外的无源元件或发射线的金属线形成,从而防止了无源元件与半导体衬底之间的干涉, 衰减发送信号防止在高频带操作中被衰减。 因此,将单位有源元件的半导体衬底和能够操作高频带的MMIC制造成硅,因此有利于降低成本并提高产量。 氧化硅层由用于无源元件或沟槽外部的传输线的金属线形成,从而防止无源元件与半导体衬底之间的干涉,并且衰减发射信号防止衰减 高频段操作。 因此,将单位有源元件的半导体衬底和能够操作高频带的MMIC制造成硅,因此降低成本并提高产量是有利的。