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11. 发明授权

US08273638B2 Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor 有权
标题翻译：使用金属诱导结晶工艺的薄膜晶体管及其制造方法以及使用该薄膜晶体管的有源矩阵平板显示器
公开(公告)号：US08273638B2
公开(公告)日：2012-09-25
申请号：US11968365
申请日：2008-01-02
申请人： Jae-Bon Koo , Sang-Gul Lee
发明人： Jae-Bon Koo , Sang-Gul Lee
IPC分类号： C30B1/08 , C09K19/00
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystallization inducing metal layer below a buffer layer and diffusing the crystallization inducing metal layer. The thin film transistor may include a crystallization inducing metal layer formed on an insulating substrate, a buffer layer formed on the crystallization inducing metal layer, and an active layer formed on the buffer layer and including source/drain regions, and including polycrystalline silicon crystallized by the MIC process.
摘要翻译：提供了可以使用金属诱导结晶（MIC）制造的薄膜晶体管及其制造方法。还提供了使用薄膜晶体管的有源矩阵平板显示器，其可以通过在缓冲层下方形成结晶诱导金属层并扩散结晶诱导金属层来产生。薄膜晶体管可以包括形成在绝缘基板上的结晶诱导金属层，形成在结晶诱导金属层上的缓冲层，以及形成在缓冲层上并包括源极/漏极区域的有源层，并且包括由 MIC过程。

12. 发明申请

US20050116305A1 Thin film transistor 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20050116305A1
公开(公告)日：2005-06-02
申请号：US10992645
申请日：2004-11-22
申请人： Eui-Hoon Hwang , Sang-Gul Lee , Deuk-Jong Kim
发明人： Eui-Hoon Hwang , Sang-Gul Lee , Deuk-Jong Kim
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L21/335 , H01L21/338 , H01L21/8232 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/66765 , H01L29/78609 , H01L29/78675 , H01L29/78678
摘要： A thin film transistor according to the present invention may include a gate insulating layer; and a lower pattern placed below the gate insulating layer to contact therewith and having an edge with a taper angle of at most about 80°. With this design, dielectric strength of the gate insulating layer can be enhanced. The lower pattern can be a gate electrode layer.
摘要翻译：根据本发明的薄膜晶体管可以包括栅极绝缘层; 以及放置在栅极绝缘层下方以与其接触并具有至多约80°的锥角的边缘的下部图案。通过这种设计，可以提高栅极绝缘层的介电强度。下图案可以是栅极电极层。

13. 发明申请

US20050110090A1 Thin film transistor, method of fabricating the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20050110090A1
公开(公告)日：2005-05-26
申请号：US10994264
申请日：2004-11-23
申请人： Jae-Bon Koo , Sang-Gul Lee
发明人： Jae-Bon Koo , Sang-Gul Lee
IPC分类号： H01L21/336 , H01L29/41 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/20 , H01L21/36 , H01L21/84 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78621 , H01L29/78627
摘要： A thin film transistor with a GOLDD structure may include an active layer formed on an insulating substrate including source/drain regions and a channel region. A gate insulating film may be formed on the active layer and a gate electrode may be formed on the gate insulating film. The gate electrode may include a first gate pattern and a second gate pattern formed at sides of the first gate pattern. The source/drain regions may each have an LDD region, and the LDD regions may overlaps-the gate electrode.
摘要翻译：具有GOLDD结构的薄膜晶体管可以包括形成在包括源极/漏极区域和沟道区域的绝缘基板上的有源层。可以在有源层上形成栅极绝缘膜，并且可以在栅极绝缘膜上形成栅电极。栅电极可以包括形成在第一栅极图案的侧面处的第一栅极图案和第二栅极图案。源极/漏极区域可以各自具有LDD区域，并且LDD区域可能与栅电极重叠。

14. 发明授权

US06562667B1 TFT for LCD device and fabrication method thereof 有权
标题翻译： LCD装置用TFT及其制造方法
公开(公告)号：US06562667B1
公开(公告)日：2003-05-13
申请号：US09715188
申请日：2000-11-20
申请人： Eui-Hoon Hwang , Sang-Gul Lee
发明人： Eui-Hoon Hwang , Sang-Gul Lee
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78621
摘要： An object of the present invention is to crystallize and activate the doped amorphous semiconductor layer at the same time. It is also an object to provide the TFT with good electrical connection between the source or drain electrodes and the semiconductor layer. The inventive method of fabricating TFT for a liquid crystal display device, includes forming a buffer layer on a substrate; forming an amorphous semiconductor layer on the whole buffer layer, the semiconductor layer having a channel region and source and drain ohmic contact regions, each positioned at opposing ends of the channel region; doping n+ (or p+) ions on the source and drain ohmic contact regions of the semiconductor layer while covering the channel region with a photoresist; patterning the semiconductor layer to have an island shape, the island shape including the channel region and the source and drain ohmic contact regions; irradiating laser beams on the semiconductor layer having the island shape, thereby crystallizing and activating the semiconductor layer; forming a first insulating layer on the semiconductor layer; forming a gate electrode on the first insulating layer; forming a second insulating layer on the first insulating layer while covering the gate electrode; forming source and drain contact holes penetrating both the first and second insulating layers to the source and drain ohmic contact regions of the semiconductor layer, respectively; and forming the source and drain electrodes on the second insulating layer, while the source and drain electrodes having electrical connection to the source and drain ohmic contact regions of the semiconductor layer.
摘要翻译：本发明的目的是同时结晶和活化掺杂的非晶半导体层。本发明的另一个目的是提供TFT在源极或漏极和半导体层之间的良好电连接。本发明制造用于液晶显示器件的TFT的方法包括在衬底上形成缓冲层; 在整个缓冲层上形成非晶半导体层，所述半导体层具有沟道区和源极和漏极欧姆接触区，每个位于沟道区的相对端; 在半导体层的源极和漏极欧姆接触区域上掺杂n +（或p +）离子，同时用光致抗蚀剂覆盖沟道区域; 将半导体层图形化为岛状，该岛状包括沟道区和源极和漏极欧姆接触区; 在具有岛状的半导体层上照射激光束，从而使半导体层结晶并起作用; 在所述半导体层上形成第一绝缘层; 在所述第一绝缘层上形成栅电极; 在覆盖所述栅电极的同时在所述第一绝缘层上形成第二绝缘层; 形成分别将所述第一和第二绝缘层穿过所述半导体层的源极和漏极欧姆接触区域的源极和漏极接触孔; 以及在所述第二绝缘层上形成所述源极和漏极，同时所述源极和漏极与所述半导体层的所述源极和漏极欧姆接触区域电连接。

15. 发明授权

US6077730A Method of fabricating thin film transistors 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US6077730A
公开(公告)日：2000-06-20
申请号：US22415
申请日：1998-02-12
申请人： Sang-Gul Lee , Ju-Cheon Yeo , Yong-Min Ha
发明人： Sang-Gul Lee , Ju-Cheon Yeo , Yong-Min Ha
IPC分类号： H01L29/786 , H01L21/336 , H01L21/84
CPC分类号： H01L27/127 , H01L29/78621
摘要： A method is provided for fabricating a thin film transistor on a substrate. The method includes the steps of forming an active layer having a channel region on the substrate, forming an impurity-blocking mask covering the channel region and portions of the active layer outside the channel region adjacent the channel region, and doping impurities of a first conductivity type at a high density into portions of the active layer uncovered by the impurity-blocking mask to form impurity-doped regions in the active layer. The method further includes the steps of removing the impurity-blocking mask and thereafter performing a plasma treatment on the resultant structure using a plasma gas containing impurities of the first conductivity type to form LDD regions in the active layer between the channel region and the impurity-doped regions.
摘要翻译：提供了一种在衬底上制造薄膜晶体管的方法。该方法包括以下步骤：在衬底上形成具有沟道区的有源层，形成覆盖沟道区的杂质阻挡掩模和与沟道区相邻的沟道区之外的有源层的部分，以及掺杂第一导电性的杂质以高密度键入由杂质阻挡掩模未覆盖的有源层的部分，以在有源层中形成杂质掺杂区域。该方法还包括以下步骤：去除杂质阻挡掩模，然后使用含有第一导电类型的杂质的等离子气体对所得结构进行等离子体处理，以在沟道区和杂质阻挡掩模之间的有源层中形成LDD区，掺杂区域。

16. 发明授权

US5835172A Thin film transistor liquid crystal display with main gate electrode contacting subsidiary gate electrodes and method of fabricating 失效
标题翻译：薄膜晶体管液晶显示器与主栅极接触辅助栅电极及其制造方法
公开(公告)号：US5835172A
公开(公告)日：1998-11-10
申请号：US874659
申请日：1997-06-13
申请人： Ju-Cheon Yeo , Sang-Gul Lee
发明人： Ju-Cheon Yeo , Sang-Gul Lee
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin-film transistor liquid crystal display includes a substrate, an active layer on the substrate, having first and second impurity regions and first, second, and third non-impurity regions, gate insulating layer on the active layer, first and second electric field control layers on the second and third non-impurity regions, respectively, first and second subsidiary gate electrodes on the first and second electric field control layers, respectively, and a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
摘要翻译：薄膜晶体管液晶显示器包括基板，基板上的有源层，具有第一和第二杂质区域以及第一，第二和第三非杂质区域，有源层上的栅极绝缘层，第一和第二电场第二和第三非杂质区域上的控制层分别分别在第一和第二电场控制层上的第一和第二辅助栅电极以及栅极绝缘层上的主栅电极，主栅电极接触第一和第二副栅极电极以及第一和第二电场控制层。

17. 发明授权

US08278664B2 Organic light emitting display device and method of fabricating the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08278664B2
公开(公告)日：2012-10-02
申请号：US11473581
申请日：2006-06-22
申请人： Eui-Hoon Hwang , Sang-Gul Lee
发明人： Eui-Hoon Hwang , Sang-Gul Lee
IPC分类号： H01L29/786
CPC分类号： H01L27/3276 , H01L27/3244 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： Provided are an organic light emitting display device (OLED) and a method of fabricating the same. When a electrically conductive line and a gate electrode are formed at the same time or when a first electrode is formed, interconnections for electrically connecting elements are formed. Thus, the number of used masks can be reduced, so that the overall fabrication process can be shortened and the production cost can be reduced.
摘要翻译：提供了一种有机发光显示装置（OLED）及其制造方法。当同时形成导电线和栅电极时，或者当形成第一电极时，形成用于电连接元件的互连。因此，可以减少使用的掩模的数量，从而可以缩短整个制造过程并且可以降低生产成本。

18. 发明授权

US07910414B2 Method of fabricating array substrate 有权
标题翻译：阵列基板的制作方法
公开(公告)号：US07910414B2
公开(公告)日：2011-03-22
申请号：US12591501
申请日：2009-11-20
申请人： Hee-Dong Choi , Sang-Gul Lee , Seong-Moh Seo , Jun-Min Lee , Byung-Chul Ahn
发明人： Hee-Dong Choi , Sang-Gul Lee , Seong-Moh Seo , Jun-Min Lee , Byung-Chul Ahn
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1274 , H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.
摘要翻译：制造阵列基板的方法包括在基板上依次形成第一金属层，第一无机绝缘层和本征非晶硅层，所述第一金属层包括第一金属材料层和第二金属材料层; 结晶本征非晶硅; 形成栅电极，栅极线，栅绝缘层和有源层; 形成包括分别暴露有源层的两侧的第一和第二接触孔的层间绝缘层; 形成分别接触有源层的两侧的第一和第二欧姆接触图案，源电极，漏电极和连接源电极的数据线; 在源极上形成钝化层，漏电极; 以及在所述钝化层上形成像素电极并与所述漏电极接触。

19. 发明授权

US07335917B2 Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor 有权
标题翻译：使用金属诱导结晶工艺的薄膜晶体管及其制造方法以及使用该薄膜晶体管的有源矩阵平板显示器
公开(公告)号：US07335917B2
公开(公告)日：2008-02-26
申请号：US10992856
申请日：2004-11-22
申请人： Jae-Bon Koo , Sang-Gul Lee
发明人： Jae-Bon Koo , Sang-Gul Lee
IPC分类号： H01L29/94
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystallization inducing metal layer below a buffer layer and diffusing the crystallization inducing metal layer. The thin film transistor may include a crystallization inducing metal layer formed on an insulating substrate, a buffer layer formed on the crystallization inducing metal layer, and an active layer formed on the buffer layer and including source/drain regions, and including polycrystalline silicon crystallized by the MIC process.
摘要翻译：提供了可以使用金属诱导结晶（MIC）制造的薄膜晶体管及其制造方法。还提供了使用薄膜晶体管的有源矩阵平板显示器，其可以通过在缓冲层下方形成结晶诱导金属层并扩散结晶诱导金属层来产生。薄膜晶体管可以包括形成在绝缘基板上的结晶诱导金属层，形成在结晶诱导金属层上的缓冲层，以及形成在缓冲层上并包括源极/漏极区域的有源层，并且包括由 MIC过程。

20. 发明授权

US07235850B2 Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US07235850B2
公开(公告)日：2007-06-26
申请号：US10992131
申请日：2004-11-19
申请人： Jae-Bon Koo , Sang-Gul Lee
发明人： Jae-Bon Koo , Sang-Gul Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78621 , H01L29/78627
摘要： A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.
摘要翻译：薄膜晶体管可以包括形成在绝缘基板上并形成有源极/漏极区域和沟道区域的有源层; 形成在有源层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。栅电极可以由导电金属膜图案和覆盖导电金属膜图案的导电氧化物膜形成。源极/漏极区域可以包括LDD区域，并且LDD区域可以至少部分地与栅电极重叠。

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