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11. 发明授权

US07186487B1 Method of controlling exposure processes by monitoring photon levels, and system for accomplishing same 有权
标题翻译：通过监控光子水平来控制曝光过程的方法以及完成相同的系统
公开(公告)号：US07186487B1
公开(公告)日：2007-03-06
申请号：US10771109
申请日：2004-02-03
申请人： Robert J. Chong
发明人： Robert J. Chong
IPC分类号： G03C5/00
CPC分类号： G03F7/70558 , G03B7/00
摘要： The present invention is generally directed to various methods of controlling exposure processes by monitoring photon levels, and various systems for accomplishing same. In one embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, counting a number of photons incident on at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the counted number of photons. In another illustrative embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, determining a rate at which the photons impact at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the determined rate of the photons impacting the layer of photo-sensitive material.
摘要翻译：本发明一般涉及通过监控光子水平来控制曝光过程的各种方法以及用于实现其的各种系统。在一个实施例中，该方法包括通过产生由来自光源的多个光子组成的光来曝光光敏材料层的至少一部分，对入射在至少一部分上的光子计数的光敏材料层，并且基于计数的光子数来控制曝光过程的持续时间和光源的辐照度中的至少一个。在另一说明性实施例中，该方法包括通过产生由光源产生的多个光子的光进行曝光处理，以暴露光敏材料层的至少一部分，确定光子至少影响的速率光敏材料层的一部分，并且基于影响光敏材料层的光子的确定速率来控制曝光过程的持续时间和光源的辐照度中的至少一个。

12. 发明授权

US06842661B2 Process control at an interconnect level 失效
标题翻译：互连级别的过程控制
公开(公告)号：US06842661B2
公开(公告)日：2005-01-11
申请号：US10260894
申请日：2002-09-30
申请人： Robert J. Chong , Eric O. Green
发明人： Robert J. Chong , Eric O. Green
IPC分类号： G05B19/418 , H01L21/66 , G06F19/00 , H01L21/00
CPC分类号： H01L22/20 , G05B19/4183 , G05B2219/32183 , G05B2219/36284 , G05B2219/45026 , G05B2219/45031 , H01L2223/54453 , H01L2924/0002 , Y02P90/10 , Y02P90/22 , H01L2924/00
摘要： A method and an apparatus for performing process control at an interconnect level. A process step upon a workpiece is performed. Manufacturing data relating to an interconnect location on the workpiece is acquired. An interconnect characteristic control process is performed based upon the manufacturing data. The interconnect characteristic control process includes controlling a process relating to a structure associated with the interconnect location on the workpiece to control a characteristic relating to the interconnect location.
摘要翻译：一种用于在互连级别执行过程控制的方法和装置。执行工件上的工艺步骤。获取与工件上的互连位置有关的制造数据。基于制造数据进行互连特性控制处理。互连特征控制处理包括控制与工件上的互连位置相关联的结构的处理，以控制与互连位置相关的特性。

13. 发明授权

US07774670B2 Method and apparatus for dynamically determining tester recipes 有权
标题翻译：用于动态确定测试仪配方的方法和设备
公开(公告)号：US07774670B2
公开(公告)日：2010-08-10
申请号：US11853304
申请日：2007-09-11
申请人： Richard J. Markle , Douglas C. Kimbrough , Eric O. Green , Robert J. Chong
发明人： Richard J. Markle , Douglas C. Kimbrough , Eric O. Green , Robert J. Chong
IPC分类号： G01R31/28 , G06F11/00
CPC分类号： G01R31/31707 , G01R31/31721
摘要： A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.
摘要翻译：一种方法包括检索基于与多个集成电路装置相关联的测试结果确定的组测试参数。使用测试程序和组测试参数测试特定的集成电路设备。

14. 发明授权

US07100081B1 Method and apparatus for fault classification based on residual vectors 有权
标题翻译：基于残差向量的故障分类方法和装置
公开(公告)号：US07100081B1
公开(公告)日：2006-08-29
申请号：US10682019
申请日：2003-10-09
申请人： Matthew A. Purdy , Robert J. Chong , Gregory A. Cherry , Richard J. Markle
发明人： Matthew A. Purdy , Robert J. Chong , Gregory A. Cherry , Richard J. Markle
IPC分类号： G06F11/00 , G06F19/00
CPC分类号： G05B23/0254 , G05B19/41875 , G05B2219/37519 , G05B2219/45031 , Y02P90/22
摘要： A method includes receiving a current residual vector. The current residual vector is compared to a plurality of historical residual vectors. Each historical residual vector has an associated fault classification code. At least one of the historical residual vectors is selected responsive to determining that the current residual vector matches at least one of the historical residual vectors. A fault condition is classified based on the fault classification code associated with the selected historical residual vector.
摘要翻译：一种方法包括接收当前残差矢量。将当前残差向量与多个历史残差向量进行比较。每个历史残差向量都有相关的故障分类码。响应于确定当前残差向量与至少一个历史残差向量相匹配来选择至少一个历史残差向量。基于与所选择的历史残差向量相关联的故障分类码，对故障条件进行分类。

15. 发明授权

US06953697B1 Advanced process control of the manufacture of an oxide-nitride-oxide stack of a memory device, and system for accomplishing same 失效
标题翻译：存储器件的氧化物 - 氮化物 - 氧化物堆叠的制造的先进工艺控制和用于实现其的系统
公开(公告)号：US06953697B1
公开(公告)日：2005-10-11
申请号：US10277357
申请日：2002-10-22
申请人： Howard E. Castle , Robert J. Chong , Brian K. Cusson , Eric O. Green
发明人： Howard E. Castle , Robert J. Chong , Brian K. Cusson , Eric O. Green
IPC分类号： H01L21/66 , H01L21/8247
CPC分类号： H01L22/12 , Y10S438/954
摘要： The present invention is generally directed to an advanced process control of the manufacture of memory devices, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form at least one layer of an oxide-nitride-oxide stack of a memory cell, the stack being comprised of a first layer of oxide positioned above a first layer of polysilicon, a layer of silicon nitride positioned above the first layer of oxide, and a second layer of oxide positioned above the layer of silicon nitride. The method further comprises measuring at least one characteristic of at least one of the first layer of polysilicon, the first oxide layer, the layer of silicon nitride, and the second layer of oxide and adjusting at least one parameter of at least one process operation used to form at least one of the first oxide layer, the layer of silicon nitride and the second oxide layer if the measured at least one characteristic is not within acceptable limits.
摘要翻译：本发明一般涉及存储器件的制造的高级过程控制和用于实现其的系统。在一个说明性实施例中，该方法包括执行至少一个处理操作以形成存储器单元的氧化物 - 氮化物 - 氧化物堆叠的至少一层，所述堆叠由位于第一多晶硅层之上的第一层氧化物位于第一氧化物层之上的氮化硅层和位于氮化硅层上方的第二层氧化物。该方法还包括测量第一多晶硅层，第一氧化物层，氮化硅层和第二氧化物层中的至少一个的至少一个特征，并且调整使用的至少一个工艺操作的至少一个参数如果所测量的至少一个特性不在可接受的限度内，则形成第一氧化物层，氮化硅层和第二氧化物层中的至少一个。

16. 发明授权

US06790376B1 Process control based upon weight or mass measurements, and systems for accomplishing same 失效
标题翻译：基于重量或质量测量的过程控制以及完成相同的系统
公开(公告)号：US06790376B1
公开(公告)日：2004-09-14
申请号：US09911264
申请日：2001-07-23
申请人： Richard J. Markle , Robert J. Chong
发明人： Richard J. Markle , Robert J. Chong
IPC分类号： C03C1500
CPC分类号： H01L21/67253
摘要： In general, the present invention is directed to methods of using weight or mass measurements to control various semiconductor manufacturing processes, and systems for accomplishing same. One illustrative method comprises providing a substrate, performing a deposition process to form a process layer above the substrate, determining a weight or mass of the process layer formed above the substrate, and controlling at least one parameter of the deposition process based upon the determined weight or mass of the process layer. One illustrative system in accordance with the present invention comprises a deposition tool for performing a deposition process to form a process layer above a substrate, a pressure sensor in contact with the substrate for sensing a pressure induced as a result of the process layer formed above the substrate, and a controller for controlling at least one parameter of the deposition process based upon the sensed pressure. The method and systems disclosed herein may also be used with other processes, such as etching processes.
摘要翻译：通常，本发明涉及使用重量或质量测量来控制各种半导体制造工艺的方法，以及用于实现其的系统。一个说明性方法包括提供基底，执行沉积工艺以在基底上形成工艺层，确定在基底上形成的处理层的重量或质量，以及基于确定的重量来控制沉积过程的至少一个参数或质量的处理层。根据本发明的一个说明性系统包括用于执行沉积工艺以在基板上形成工艺层的沉积工具，与基板接触的压力传感器，用于感测由于在上面形成的处理层而导致的压力基板和用于基于所感测的压力来控制沉积工艺的至少一个参数的控制器。本文公开的方法和系统也可以与诸如蚀刻工艺的其它工艺一起使用。

17. 发明授权

US07473566B1 Method and apparatus for controlling a film formation process with multiple objectives 有权
标题翻译：用于控制具有多个目标的成膜过程的方法和装置
公开(公告)号：US07473566B1
公开(公告)日：2009-01-06
申请号：US10770682
申请日：2004-02-03
申请人： Matthew A. Purdy , Robert J. Chong
发明人： Matthew A. Purdy , Robert J. Chong
IPC分类号： H01L21/66
CPC分类号： G05B13/024
摘要： A method includes defining a plurality of objectives for a film formation process and employing a control equation incorporating the plurality of objectives to generate at least one operating recipe parameter for the film formation process. A system includes a film formation unit and a process control unit. The film formation unit is adapted to perform a film formation process in accordance with an operating recipe. The process control unit is adapted to define a plurality of objectives for the film formation process and employ a control equation incorporating the plurality of objectives to generate at least one operating recipe parameter for the film formation process.
摘要翻译：一种方法包括为成膜过程定义多个目标，并采用结合多个目标的控制方程来生成用于成膜过程的至少一个操作配方参数。系统包括成膜单元和过程控制单元。成膜单元适于根据操作配方进行成膜处理。过程控制单元适于限定用于成膜过程的多个目标，并采用并入多个目标的控制方程，以生成用于成膜过程的至少一个操作配方参数。

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