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11. 发明授权

US06605839B2 Multi-level type nonvolatile semiconductor memory device 有权
公开(公告)号：US06605839B2
公开(公告)日：2003-08-12
申请号：US10303726
申请日：2002-11-26
申请人： Hirotomo Miura , Yasuo Sato
发明人： Hirotomo Miura , Yasuo Sato
IPC分类号： H01L2976
CPC分类号： H01L27/11568 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/5657 , G11C11/5671 , G11C16/0466 , H01L27/115 , H01L29/7923
摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

12. 发明授权

US06469343B1 Multi-level type nonvolatile semiconductor memory device 有权
标题翻译：多级型非易失性半导体存储器件
公开(公告)号：US06469343B1
公开(公告)日：2002-10-22
申请号：US09679650
申请日：2000-10-05
申请人： Hirotomo Miura , Yasuo Sato
发明人： Hirotomo Miura , Yasuo Sato
IPC分类号： H01L29792
CPC分类号： H01L27/11568 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/5657 , G11C11/5671 , G11C16/0466 , H01L27/115 , H01L29/7923
摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.
摘要翻译：一种具有非易失性存储单元的非易失性半导体存储器件，每个所述存储单元包括一种类型的导电的半导体衬底，形成在所述半导体衬底中的相对电导体的一对源区和漏区，在一对源区和漏区之间的沟道区上形成的捕获膜，以及形成在电荷捕获膜上并用作控制电极的栅电极。电荷捕获膜具有多层结构，其中至少四个绝缘膜和每个用作电荷蓄积层的至少三个电介质膜彼此交替层叠，所述至少四个绝缘膜形成绝缘膜作为栅极绝缘膜，对至少三个电介质膜设置多个不同的阈值电压以对应于其电荷捕获状态，并且根据多个不同的阈值电压指定至少四种存储状态的阈值电压。这种结构使得可以容易且可靠地调整要捕获的电荷量，并因此存储期望的多值数据，同时防止诸如数据损坏的不便的发生。

13. 发明授权

US06441858B1 Image data conversion processing device and information processing device having the same 失效
标题翻译：减少转换图像闪烁的图像数据转换处理装置的方法
公开(公告)号：US06441858B1
公开(公告)日：2002-08-27
申请号：US09358544
申请日：1999-07-22
申请人： Makoto Nakamoto , Satoshi Nakamura , Akinori Takayama , Kazunori Takahashi , Akio Takigami , Yasuo Sato , Chiaki Ito , Yoichi Aoki
发明人： Makoto Nakamoto , Satoshi Nakamura , Akinori Takayama , Kazunori Takahashi , Akio Takigami , Yasuo Sato , Chiaki Ito , Yoichi Aoki
IPC分类号： H04N701
CPC分类号： G09G5/006 , G09G1/285 , G09G5/06 , G09G5/391 , G09G5/393 , G09G5/395 , G09G2320/0247 , G09G2340/0407 , G09G2340/0414 , G09G2340/0421 , G09G2340/0428 , G09G2340/0442 , G09G2340/10 , G09G2340/14 , G09G2360/02 , H04N5/2628 , H04N7/012 , H04N7/0135 , H04N9/641 , Y10S348/91
摘要： An image data conversion processing device including an issue unit, plural line storing units and a generating unit for converting to a television signal image data stored in plural kinds of developing formats in a storing unit. The image data comprises plural lines, and the television signal comprises a predetermined number of lines. The issue unit issues a transmission instruction of image data to the storing unit in accordance with a period specified by a ratio of the number of lines of the image data to be converted and the number of lines of the television signal. The plural line storing units cyclically store the image data transmitted from the storing unit line by line on the basis of the transmission instruction of the issue unit. In synchronism with the horizontal synchronizing signal of the television signal, the generating unit multiplies the image data stored in the line storing unit by an interpolative coefficient corresponding to the developing format of the image data to be converted in the plural interpolative coefficients, which are beforehand set for the plural kinds of developing formats, thereby generating the television signal.
摘要翻译：一种图像数据转换处理装置，包括发行单元，多行存储单元和用于转换为存储在存储单元中的以多种显影格式存储的电视信号图像数据的生成单元。图像数据包括多条线，并且电视信号包括预定数量的线。发行单元根据由要转换的图像数据的行数与电视信号的行数之比指定的周期向存储单元发出图像数据的传输指令。多行存储单元根据发行单元的发送指令逐行地存储从存储单元发送的图像数据。与电视信号的水平同步信号同步，生成单元将存储在行存储单元中的图像数据乘以与预先在多个内插系数中的要转换的图像数据的显影格式相对应的内插系数设置为多种显影格式，从而产生电视信号。

14. 发明授权

US06381310B2 Communication support system for providing telephone services to a telephone user by remote control of a data processing device 失效
标题翻译：通信支持系统，用于通过遥控数据处理设备向电话用户提供电话服务
公开(公告)号：US06381310B2
公开(公告)日：2002-04-30
申请号：US09046556
申请日：1998-03-24
申请人： Kimikazu Furukawa , Tomoyoshi Takebayashi , Toshihiro Azami , Katsutoshi Yano , Jun Kakuta , Yasuo Sato
发明人： Kimikazu Furukawa , Tomoyoshi Takebayashi , Toshihiro Azami , Katsutoshi Yano , Jun Kakuta , Yasuo Sato
IPC分类号： H04M164
CPC分类号： H04M3/42 , H04M3/4228 , H04M7/12
摘要： A communication support system includes a command signal detection unit which detects a command signal sent by a telephone unit, the command signal indicating one of a plurality of telephone services. A telephone service recognition unit determines which of the plurality of telephone services is indicated by the command signal from the telephone unit. A telephone service processing unit executes a telephone service processing for the telephone service determined by the telephone service recognition unit, the telephone service processing unit starting execution of the telephone service processing in response to control data from the command signal detection unit.
摘要翻译：通信支持系统包括命令信号检测单元，其检测由电话单元发送的命令信号，指示多个电话服务中的一个的命令信号。电话服务识别单元确定来自电话单元的命令信号指示多个电话服务中的哪一个。电话服务处理单元对由电话服务识别单元确定的电话服务执行电话服务处理，电话服务处理单元响应于来自命令信号检测单元的控制数据开始执行电话服务处理。

15. 发明授权

US06317762B1 Document creating apparatus creates free format document from handwritten data converting into normalized size 失效
标题翻译：文档创建设备从手写数据创建自由格式文档转换为归一化大小
公开(公告)号：US06317762B1
公开(公告)日：2001-11-13
申请号：US08744993
申请日：1996-11-07
申请人： Toru Okawa , Ryuichi Matsukura , Yasuo Sato
发明人： Toru Okawa , Ryuichi Matsukura , Yasuo Sato
IPC分类号： G06F1730
CPC分类号： G06T11/60 , G06K9/00402
摘要： A document creating apparatus creates a document in response to handwritten data generated from a handwritten data input device and displays the created document on a display screen. The document creating apparatus includes a setting mechanism for setting on the display screen one or a plurality of normalized regions having a normalized size as an attribute and one or a plurality of non-normalized regions having no normalized size as the attribute, a judging mechanism for judging whether input data are input to the normalized region or the non-normalized region, a first storing mechanism for converting a size of the input data into a normalized size of the normalized region and storing the normalized input data in a memory when the judging mechanism judges that the input data are input to the normalized region, and a second storing mechanism for storing the input data in the memory as they are when the judging mechanism judges that the input data are input to the non-normalized region.
摘要翻译：文档创建装置响应于从手写数据输入装置生成的手写数据创建文档，并将显示画面上显示所生成的文档。该文件制作装置包括一个设置机构，用于在显示屏幕上设置一个或多个归一化尺寸的归一化区域作为属性，一个或多个非标准化区域没有归一化尺寸作为属性，判断输入数据是否被输入到归一化区域或非归一化区域;第一存储机构，用于将所述输入数据的大小转换成归一化区域的归一化大小，并且当所述判断机构判断输入数据被输入到归一化区域;以及第二存储机构，用于当判断机构判断输入数据被输入到非归一化区域时，将它们存储在存储器中。

16. 发明授权

US5796149A Semiconductor memory using different concentration impurity diffused layers 失效
标题翻译：半导体存储器采用不同浓度的杂质扩散层
公开(公告)号：US5796149A
公开(公告)日：1998-08-18
申请号：US524672
申请日：1995-09-08
申请人： Fumitaka Sugaya , Yasuo Sato
发明人： Fumitaka Sugaya , Yasuo Sato
IPC分类号： H01L21/8246 , H01L29/78 , H01L29/76 , H01L29/94
CPC分类号： H01L27/11266 , H01L29/7835
摘要： A semiconductor memory which includes first and second memory cells, wherein the first memory cells include first MOS transistors each having impurity diffused layers provided inside of both of a source and a drain to expanding source and drain regions, the second memory cells include second or third MOS transistors each having an impurity diffused layer provided inside of one of a source and a drain or include fourth MOS transistors each having no impurity diffused layer provided inside of either thereof, as well as a method for fabricating the semiconductor memory. Differences in threshold voltage between the first and second to fourth MOS transistors are utilized as differences in storage status between the first and second memory cells so that data "0" or "1" is stored in each memory cell. There are also provided a semiconductor memory wherein differences between the first to fourth MOS transistors in the drain-source current flowing through the transistors when subjected to application of an identical gate voltage thereto are utilized to store four sorts of data in one memory cell, and provided a method for fabricating the semiconductor memory.
摘要翻译：一种半导体存储器，包括第一和第二存储单元，其中第一存储单元包括第一MOS晶体管，每个第一MOS晶体管具有设置在源极和漏极两者内部的扩散源极和漏极区的杂质扩散层，第二存储单元包括第二或第三每个具有设置在源极和漏极之一内部的杂质扩散层的MOS晶体管或包括设置在其任一内侧的不具有杂质扩散层的第四MOS晶体管以及半导体存储器的制造方法。利用第一和第二至第四MOS晶体管之间的阈值电压的差异作为第一和第二存储单元之间的存储状态的差异，从而在每个存储单元中存储数据“0”或“1”。还提供了一种半导体存储器，其中利用在施加相同的栅极电压时流过晶体管的漏 - 源电流中的第一至第四MOS晶体管之间的差异来将四种数据存储在一个存储单元中，以及提供了一种用于制造半导体存储器的方法。

17. 发明授权

US5686333A Nonvolatile semiconductor memory device and method of producing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US5686333A
公开(公告)日：1997-11-11
申请号：US736059
申请日：1996-10-22
申请人： Yasuo Sato
发明人： Yasuo Sato
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H61L21/8247
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324
摘要： In a nonvolatile semiconductor memory device and a method of producing the same, the nonvolatile semiconductor memory device includes a semiconductor substrate of a first conductivity type, a pair of spaced source/drain diffusion layers of a second conductivity type different from the first conductivity type, a floating gate electrode formed on a channel region disposed between the pair of source/drain diffusion layers in the surface of the semiconductor substrate in an insulated relationship with the channel region, and a control gate electrode formed on the floating gate electrode in on insulated relationship with the floating gate electrode wherein a part of the control gate electrode to extend beyond a side of the floating gate electrode to an underside thereof.
摘要翻译：在非易失性半导体存储器件及其制造方法中，非易失性半导体存储器件包括第一导电类型的半导体衬底，与第一导电类型不同的第二导电类型的一对间隔的源极/漏极扩散层，形成在沟道区域上的浮栅，该沟道区设置在半导体衬底的与沟道区绝缘的表面中的一对源极/漏极扩散层之间，并且以绝缘关系形成在浮置栅电极上的控制栅电极其中所述浮栅电极，其中所述控制栅电极的一部分延伸超过所述浮栅电极的一侧到其下侧。

18. 发明授权

US5631257A Benzoxazole derivatives 失效
标题翻译：苯并恶唑衍生物
公开(公告)号：US5631257A
公开(公告)日：1997-05-20
申请号：US487697
申请日：1995-06-07
申请人： Katsuyoshi Iwamatsu , Yasuo Sato , Masaaki Izumi , Fukio Konno , Seiji Shibahara , Shigeharu Inoye , Koichi Shudo , Kazuko Amano
发明人： Katsuyoshi Iwamatsu , Yasuo Sato , Masaaki Izumi , Fukio Konno , Seiji Shibahara , Shigeharu Inoye , Koichi Shudo , Kazuko Amano
IPC分类号： A61K31/42 , A61K31/423 , A61K31/495 , A61K31/496 , A61K31/55 , A61P1/00 , A61P1/08 , A61P1/14 , A61P25/04 , A61P25/18 , A61P25/20 , A61P25/22 , A61P43/00 , C07D263/58 , C07D263/60 , C07D487/10 , C07D401/00 , C07D419/00
CPC分类号： C07D263/58 , C07D263/60 , C07D487/10
摘要： A benzoxazole derivative of the formula (1) or (2) which has an alicyclic diamine group at the 2-position: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, X.sup.-, m and n are defined herein. The compound shows excellent 5-HT.sub.3 receptor antagonism and is useful as an antiemetic agent, a peristalsis controlling agent, an analgesic agent, an antianxiety agent and a schizophrenia treating agent.
摘要翻译：（2）中具有脂环族二胺基团的式（1）或（2）的苯并恶唑衍生物：其中R1，R2，R3，R4，R5，R6， X，m和n在本文中定义。该化合物显示优异的5-HT 3受体拮抗作用，可用作止吐剂，蠕动控制剂，止痛剂，抗焦虑剂和精神分裂症治疗剂。

19. 发明授权

US5433921A Process for supplying gas to a utilization station at a utilization site 失效
标题翻译：在利用场地向利用站供气的处理
公开(公告)号：US5433921A
公开(公告)日：1995-07-18
申请号：US202497
申请日：1994-02-28
申请人： Yasuo Sato
发明人： Yasuo Sato
IPC分类号： F17C13/12 , F17D1/02 , B01J19/14
CPC分类号： F17D1/02 , F17C13/12 , F17C2221/014 , F17C2221/05 , F17C2223/0123 , F17C2223/0161 , F17C2223/036 , F17C2260/038 , F17C2265/01 , F17C2265/025 , F17C2270/0518
摘要： Process and installation for supplying at least one pure active gas to at least one utilization station (P.sub.i) in a first building (A) at a utilization site. It comprises the steps of providing, at the utilization site, a second safety building (B) at a distance from the first building (A), providing at least one source (2; 7; 10) of said gas in the second building (B), and transferring, by at least one safety conduit (C) of high cleanliness, the gas, at a low pressure, to the utilization station (P.sub.i). There is also taught the step of purifying (4; 11) the gas in the second building (B) before transfer to the conduit (C). The pure gas is prepared in situ (2, 4; 10, 11) in the second building (B). There can alternatively be provided, adjacent to the second building (B), at least one source of vector gas (1), with mixing in controlled fashion (6; 9), in the second building (B), the pure active gas with the vector gas before transfer of the mixture to the conduit (C). Apparatus is provided for analyzing (3; 5, 5' ; 8, 8'; 12), in the second building (B), the purity and/or the mixing rate of the active gas and/or of a mixture of gas containing the active gas, before transfer to the conduit (C).
摘要翻译：用于将至少一种纯活性气体供应到在利用场所的第一建筑物（A）中的至少一个利用站（Pi）的过程和安装。其包括以下步骤：在使用场所提供距离第一建筑物（A）一定距离的第二安全建筑物（B），在第二建筑物中提供至少一个所述气体源（2; 7; 10） B），并且通过至少一个高清洁度的安全导管（C）将气体以低压传送到使用站（Pi）。还教导了在转移到导管（C）之前，将第二建筑物（B）中的气体净化（4; 11）的步骤。在第二建筑物（B）中原位制备纯气体（2,4,10,11）。或者可以在第二建筑物（B）中邻近第二建筑物（B）提供至少一个向量气体源（1），在第二建筑物（B）中以受控的方式（6; 9）混合，所述纯活性气体具有将混合物转移到导管（C）之前的载体气体。提供了用于在第二建筑物（B）中分析（3; 5，5'; 8，8'; 12）的装置，其中活性气体和/或包含气体的气体混合物的纯度和/或混合速率活性气体，然后转移到导管（C）。

20. 发明授权

US4548636A Process for producing a flat glass on a molten metal bath 失效
标题翻译：在熔融金属浴上制造平板玻璃的方法
公开(公告)号：US4548636A
公开(公告)日：1985-10-22
申请号：US627532
申请日：1984-07-03
申请人： Koji Nomaki , Hiroshi Mase , Yasuo Sato , Motoichi Iga
发明人： Koji Nomaki , Hiroshi Mase , Yasuo Sato , Motoichi Iga
IPC分类号： C03B18/02 , C03B18/16 , C03B18/18
CPC分类号： C03B18/18 , C03B18/16
摘要： A process for producing a flat glass, which comprises withdrawing a glass ribbon substantially horizontally from the surface of a molten metal bath while maintaining the level of the surface of the molten metal at a level higher than an end wall at the outlet of the bath from which the glass ribbon is withdrawn and preventing the overflow of the molten metal from the end wall by means of a force induced by a linear induction motor, wherein side walls at the outlet of the bath are made of an electroconductive material thereby to prevent a drop of the induced force in the vicinity of the side walls.
摘要翻译：一种制造平板玻璃的方法，其包括从熔融金属浴表面大致水平地抽出玻璃带，同时将熔融金属表面的水平保持在比熔池出口处的端壁高的水平，其中玻璃带被抽出并且通过由线性感应电动机引起的力防止熔融金属从端壁溢出，其中浴槽出口处的侧壁由导电材料制成，从而防止掉落在侧壁附近的感应力。

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