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11. 发明授权

US06529092B2 Superconductor filter and radio transmitter-receiver 有权
公开(公告)号：US06529092B2
公开(公告)日：2003-03-04
申请号：US09940502
申请日：2001-08-29
申请人： Hiroyuki Fuke , Yoshiaki Terashima , Mutsuki Yamazaki , Hiroyuki Kayano , Fumihiko Aiga , Riichi Kato
发明人： Hiroyuki Fuke , Yoshiaki Terashima , Mutsuki Yamazaki , Hiroyuki Kayano , Fumihiko Aiga , Riichi Kato
IPC分类号： H01P1213
CPC分类号： H01P1/2135
摘要： A superconductor filter includes a superconductor receiver filter of a planar transmission line structure including a signal input line, a resonator element and a signal output line and configured to select a signal received from an antenna, a superconductor transmitter filter of a planar transmission line structure including a signal input line, a resonator element and a signal output line and configured to select a signal transmitted to the antenna, the transmitter filter being arranged non-parallel to the receiver filter, and a heat-insulating container housing the superconductor receiver filter and the superconductor transmitter filter.

12. 发明授权

US06778042B2 High-frequency device 失效
标题翻译：高频设备
公开(公告)号：US06778042B2
公开(公告)日：2004-08-17
申请号：US09983891
申请日：2001-10-26
申请人： Yoshiaki Terashima , Fumihiko Aiga , Mutsuki Yamazaki , Hiroyuki Fuke , Hiroyuki Kayano , Riichi Katoh
发明人： Yoshiaki Terashima , Fumihiko Aiga , Mutsuki Yamazaki , Hiroyuki Fuke , Hiroyuki Kayano , Riichi Katoh
IPC分类号： H01P120
CPC分类号： H01P1/20381 , H01P1/203 , H01P1/20363
摘要： A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.
摘要翻译：高频器件包括电介质衬底，滤波器元件，其具有由电介质衬底上的第一超导体膜制成的多个谐振元件，与介质基片基本上平行于衬底覆盖的绝缘板，谐振元件，以及配置成控制电介质板和电介质基板之间的间隔的间隔调节构件。高频器件使得能够以高精度调节滤波器的通带频率，而不会在裙部特性或纹波特性上发生变化。

13. 发明授权

US06937117B2 High-frequency device 失效
标题翻译：高频设备
公开(公告)号：US06937117B2
公开(公告)日：2005-08-30
申请号：US10890211
申请日：2004-07-14
申请人： Yoshiaki Terashima , Fumihiko Aiga , Mutsuki Yamazaki , Hiroyuki Fuke , Hiroyuki Kayano , Riichi Katoh
发明人： Yoshiaki Terashima , Fumihiko Aiga , Mutsuki Yamazaki , Hiroyuki Fuke , Hiroyuki Kayano , Riichi Katoh
IPC分类号： H01P1/203 , H01P1/20
CPC分类号： H01P1/20381 , H01P1/203 , H01P1/20363
摘要： A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.
摘要翻译：高频器件包括电介质衬底，滤波器元件，其具有由电介质衬底上的第一超导体膜制成的多个谐振元件，与介质基片基本上平行于衬底覆盖的绝缘板，谐振元件，以及配置成控制电介质板和电介质基板之间的间隔的间隔调节构件。高频器件使得能够以高精度调节滤波器的通带频率，而不会在裙部特性或纹波特性上发生变化。

14. 发明授权

US06532377B1 Planar filter and filter system using a magnetic tuning member to provide permittivity adjustment 有权
标题翻译：平面滤波器和使用磁调谐元件的滤波器系统提供介电常数调节
公开(公告)号：US06532377B1
公开(公告)日：2003-03-11
申请号：US09654701
申请日：2000-09-01
申请人： Yoshiaki Terashima , Hiroyuki Fuke , Hiroyuki Kayano , Hisashi Yoshino
发明人： Yoshiaki Terashima , Hiroyuki Fuke , Hiroyuki Kayano , Hisashi Yoshino
IPC分类号： H01P1203
CPC分类号： H01P1/20363 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： There is disclosed a planar filter which can variably control a pass frequency band with a high precision and which is superior in skirt property and little in ripple. A planar filter member and tuning member are disposed opposite to each other via a predetermined gap. The filter member is structured in such a manner that an input/output portion formed of a superconductor and a plurality of resonance elements are formed on a substrate. The tuning member is structured in such a manner that on the surface of a magnetic plate with a permeability changing by an applied magnetic field, a plurality of dielectric thin films, and a plurality of electrodes for applying electric fields to the dielectric thin films are arranged. Each of the dielectric thin films is disposed in a position opposite to a gap between the resonance elements of the filter member, or a gap between the filter member and the input/output portion. By applying a voltage between the electrodes, an effective permittivity ∈ of the gap between the resonance elements, or the gap between the resonance element and the input/output portion is variably controlled, and the skirt property and ripple are adjusted. Moreover, a resonance frequency of the resonance elements, a coupling between the resonance elements, and a coupling between the resonance element and the input/output portion may be individually and independently controlled.
摘要翻译：公开了一种平面滤波器，其能够以高精度可变地控制通过频带，并且其裙边性能优异且纹波小。平面过滤构件和调谐构件经由预定间隙彼此相对设置。过滤构件的结构使得在基板上形成由超导体和多个谐振元件形成的输入/输出部分。调谐构件的结构是这样一种方式，即在磁场的表面上，通过施加的磁场改变磁导率，设置多个电介质薄膜和用于向电介质薄膜施加电场的多个电极。每个电介质薄膜设置在与过滤构件的谐振元件之间的间隙或过滤构件与输入/输出部之间的间隙相反的位置。通过在电极之间施加电压，有效的介电常数在谐振元件之间的间隙中，或谐振元件与输入/输出部分之间的间隙被可变地控制，并且调整裙边特性和纹波。此外，谐振元件的谐振频率，谐振元件之间的耦合以及谐振元件和输入/输出部分之间的耦合可以单独和独立地控制。

15. 发明申请

US20120112171A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20120112171A1
公开(公告)日：2012-05-10
申请号：US13234657
申请日：2011-09-16
申请人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： H01L51/54 , H01L51/40
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。第一半导体层与第一电极膜的侧面相对。第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

16. 发明授权

US08633526B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08633526B2
公开(公告)日：2014-01-21
申请号：US13234657
申请日：2011-09-16
申请人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： H01L27/108
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。第一半导体层与第一电极膜的侧面相对。第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

17. 发明授权

US5834794A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5834794A
公开(公告)日：1998-11-10
申请号：US848268
申请日：1997-04-29
申请人： Hiroyuki Fuke , Kazuo Saitoh , Youichi Enomoto
发明人： Hiroyuki Fuke , Kazuo Saitoh , Youichi Enomoto
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24 , H03K19/195 , H01L29/06
CPC分类号： H03K19/1952
摘要： Disclosed is a superconducting device comprising a logic SQUID and a readout SQUID magnetically coupled with the logic SQUID, which are fabricated using a single layer of an oxide high-temperature superconductor, wherein the logic SQUID comprising a superconducting loop constituted by a first superconducting line, a second superconducting line arranged to be parallel to the first superconducting line, third and fourth superconducting lines provided to connect the first and second superconducting lines, and two Josephson junctions formed in the third and fourth superconducting lines, and widths W.sub.1 and W.sub.2 of the first and second superconducting lines are larger than a distance d between them, the width W.sub.2 is larger than the width W.sub.1, and the widths W.sub.1 and W.sub.2 are larger than the widths W.sub.3 and W.sub.4 of the third and fourth superconducting lines.
摘要翻译：公开了一种超导装置，其包括逻辑SQUID和与逻辑SQUID磁耦合的读出SQUID，其使用单层氧化物高温超导体制造，其中包括由第一超导线构成的超导环路的逻辑SQUID，布置成与第一超导线平行的第二超导线，设置成连接第一和第二超导线的第三和第四超导线以及形成在第三和第四超导线中的两个约瑟夫逊结，以及形成在第一和第二超导线中的第一和第四超导线的宽度W1和W2 并且第二超导线大于它们之间的距离d，宽度W2大于宽度W1，并且宽度W1和W2大于第三和第四超导线的宽度W3和宽度W4。

18. 发明授权

US5728214A Surface treatment of an oxide LNBA2CU307-X single crystal 失效
标题翻译：表面处理氧化物LNBA2CU307-X单晶
公开(公告)号：US5728214A
公开(公告)日：1998-03-17
申请号：US524490
申请日：1995-09-06
申请人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
发明人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203 , C30B25/02
CPC分类号： C30B33/00 , C30B29/22 , C30B29/225
摘要： When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
摘要翻译：当加热铜盐氧化物LnBa2Cu3O7-x（Ln = Y，Pr或Sm; 0.30

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