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    • 1. 发明授权
    • Planar filter and filter system using a magnetic tuning member to provide permittivity adjustment
    • 平面滤波器和使用磁调谐元件的滤波器系统提供介电常数调节
    • US06532377B1
    • 2003-03-11
    • US09654701
    • 2000-09-01
    • Yoshiaki TerashimaHiroyuki FukeHiroyuki KayanoHisashi Yoshino
    • Yoshiaki TerashimaHiroyuki FukeHiroyuki KayanoHisashi Yoshino
    • H01P1203
    • H01P1/20363Y10S505/70Y10S505/701Y10S505/866
    • There is disclosed a planar filter which can variably control a pass frequency band with a high precision and which is superior in skirt property and little in ripple. A planar filter member and tuning member are disposed opposite to each other via a predetermined gap. The filter member is structured in such a manner that an input/output portion formed of a superconductor and a plurality of resonance elements are formed on a substrate. The tuning member is structured in such a manner that on the surface of a magnetic plate with a permeability changing by an applied magnetic field, a plurality of dielectric thin films, and a plurality of electrodes for applying electric fields to the dielectric thin films are arranged. Each of the dielectric thin films is disposed in a position opposite to a gap between the resonance elements of the filter member, or a gap between the filter member and the input/output portion. By applying a voltage between the electrodes, an effective permittivity ∈ of the gap between the resonance elements, or the gap between the resonance element and the input/output portion is variably controlled, and the skirt property and ripple are adjusted. Moreover, a resonance frequency of the resonance elements, a coupling between the resonance elements, and a coupling between the resonance element and the input/output portion may be individually and independently controlled.
    • 公开了一种平面滤波器,其能够以高精度可变地控制通过频带,并且其裙边性能优异且纹波小。 平面过滤构件和调谐构件经由预定间隙彼此相对设置。 过滤构件的结构使得在基板上形成由超导体和多个谐振元件形成的输入/输出部分。 调谐构件的结构是这样一种方式,即在磁场的表面上,通过施加的磁场改变磁导率,设置多个电介质薄膜和用于向电介质薄膜施加电场的多个电极 。 每个电介质薄膜设置在与过滤构件的谐振元件之间的间隙或过滤构件与输入/输出部之间的间隙相反的位置。 通过在电极之间施加电压,有效的介电常数在谐振元件之间的间隙中,或谐振元件与输入/输出部分之间的间隙被可变地控制,并且调整裙边特性和纹波。 此外,谐振元件的谐振频率,谐振元件之间的耦合以及谐振元件和输入/输出部分之间的耦合可以单独和独立地控制。
    • 2. 发明授权
    • Tunable resonance device controlled by separate permittivity adjusting
electrodes
    • 可调共振装置由单独的介电常数调节电极控制
    • US5965494A
    • 1999-10-12
    • US653270
    • 1996-05-24
    • Yoshiaki TerashimaHisashi YoshinoHiroyuki KayanoTadahiko Maeda
    • Yoshiaki TerashimaHisashi YoshinoHiroyuki KayanoTadahiko Maeda
    • H01P1/203H01P7/08H01L12/02
    • H01P1/20363H01P7/088Y10S505/70Y10S505/701Y10S505/866
    • A first electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication, a dielectric layer whose permittivity is changed by application of electric field, and a second electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication are sequentially stacked near a resonance element which is formed on the front surface of a dielectric substrate having a ground layer formed on the rear surface thereof. The effective permittivity of the dielectric layer is changed in a wide range by changing a voltage applied between the first and second electrically conductive layers to change the electric field applied to the dielectric layer. As a result, the impedance of the resonance element is changed, and when a plurality of resonance elements are arranged closely to each other to construct a filter, the coupling degree between the resonance elements is changed. Therefore, characteristics such as the resonance frequency of the resonator and the pass-band frequency of the filter are controlled by controlling a voltage to be applied.
    • 厚度等于或小于用于通信的无线电波的趋肤深度的第一导电层,其介电常数通过施加电场而改变的介电层,以及厚度等于或小于其的第二导电层 比用于通信的无线电波的皮肤深度依次层叠在形成在其后表面上形成有接地层的电介质基板的前表面上的谐振元件附近。 通过改变施加在第一和第二导电层之间的电压来改变施加到电介质层的电场,介电层的有效介电常数在宽范围内变化。 结果,谐振元件的阻抗发生变化,并且当多个谐振元件彼此紧密配置以构成滤波器时,谐振元件之间的耦合度改变。 因此,通过控制要施加的电压来控制谐振器的谐振频率和滤波器的通带频率等特性。
    • 6. 发明授权
    • Oxide super conductive wire and a super conductive device
    • 氧化物超导电线和超导电器件
    • US06349226B1
    • 2002-02-19
    • US09499743
    • 2000-02-08
    • Hisashi YoshinoMutsuki Yamazaki
    • Hisashi YoshinoMutsuki Yamazaki
    • H01B1202
    • H01L39/2454H01L39/143
    • An oxide superconductive wire having practically sufficient tensile strength and superconductive properties is claimed. A first aspect of the present invention includes a first metallic layer made of a silver based alloy containing a metal selected from the group consisting of copper, antimony, tin, germanium, gallium, indium, zinc, platinum and palladium; a second metallic layer having a tensile strength higher than that of silver and fixed to the first metallic layer; and an oxide superconductor layer formed on the first metallic layer. Another aspect of the present invention provides an oxide superconductive wire having first and a second layers and an oxide superconductive wire. The first metallic layer is made of silver and oriented along crystallographic (210) plane. The second metallic layer has a tensile strength higher than that of silver and is fixed to the first metallic layer. The present invention also provides a superconductive device using each of the oxide superconductive wires. The oxide superconductor layer formed on the first metallic layer of the superconductive device is disposed on the inner side of a coiled oxide superconductive wire.
    • 要求具有实际上足够的拉伸强度和超导性能的氧化物超导线。 本发明的第一方面包括由含有选自铜,锑,锡,锗,镓,铟,锌,铂和钯中的金属的银基合金制成的第一金属层; 第二金属层,其拉伸强度高于银并固定在第一金属层上; 以及形成在第一金属层上的氧化物超导体层。 本发明的另一方面提供了具有第一和第二层以及氧化物超导线的氧化物超导线。 第一金属层由银制成并且沿着晶面(210)平面取向。 第二金属层的拉伸强度高于银,并且固定在第一金属层上。 本发明还提供了使用每个氧化物超导线的超导装置。 形成在超导体的第一金属层上的氧化物超导体层设置在线圈状氧化物超导线的内侧。
    • 9. 发明授权
    • Vacuum circuit breaker
    • 真空断路器
    • US4129761A
    • 1978-12-12
    • US801218
    • 1977-05-27
    • Tsutomu OkutomiHisashi YoshinoSeishi ChibaTadahito TsutsumiKouichi Tejima
    • Tsutomu OkutomiHisashi YoshinoSeishi ChibaTadahito TsutsumiKouichi Tejima
    • H01H33/66H01H1/02
    • H01H1/0203
    • A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit making and breaking contact members formed of an alloy consisting essentially of 9.4 wt% to 15 wt% Al, 4.5 wt% to 20 wt% Ni, 0.1 wt% to 10 wt% of at least one metal (Me) selected from the group consisting of bismuth, tellurium, selenium, antimony and magnesium with copper as the balance of the alloy, wherein said alloy contains an .alpha. copper phase (Cu(.alpha.)) containing nickel and a .gamma. copper phase (Cu(.gamma.)) containing nickel substantially dispersed throughout said alloy.
    • 一种真空断路器,包括抽真空的外壳和位于外壳内的一对可移动的导电棒,其具有接触构件的接触点,其中导电棒滑入和离开接合触点,该改进包括至少一个所述触点具有电路 制造和断开由基本上由9.4重量%至15重量%的Al,4.5重量%至20重量%的Ni,0.1重量%至10重量%的至少一种选自以下的金属(Me)组成的合金形成的接触构件: 铋,碲,硒,锑和镁与铜作为合金的余量,其中所述合金含有含镍的α铜相(Cu(α))和含有镍的γ铜相(Cu(γ)),其基本上分散 贯穿所有合金。
    • 10. 发明授权
    • Vacuum circuit breaker
    • 真空断路器
    • US4129760A
    • 1978-12-12
    • US801214
    • 1977-05-27
    • Tsutomu OkutomiHisashi YoshinoSeishi Chiba
    • Tsutomu OkutomiHisashi YoshinoSeishi Chiba
    • H01H33/66H01H1/02
    • H01H1/0203
    • A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit-making and breaking members formed of an alloy consisting essentially of 4 wt% to 9.4 wt% aluminum, 0.5 wt% to 3.5 wt% of beryllium, 0.1 wt% to 10 wt% of Me.sub.1, wherein Me.sub.1 is at least one metal selected from the group consisting of bismuth, tellurium, selenium, antimony, magnesium and lead, and the balance copper.
    • 一种真空断路器,包括抽真空的外壳和位于外壳内的一对可移动的导电棒,其具有接触构件的接触点,其中导电棒滑入和离开接合触点,该改进包括至少一个所述触点具有电路 由基本上由4重量%至9.4重量%的铝,0.5重量%至3.5重量%的铍,0.1重量%至10重量%的Me 1组成的合金制成和断裂的构件,其中Me1是至少一种选自 由铋,碲,硒,锑,镁和铅组成的组,余量为铜。