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1. 发明授权

US06724216B2 Rapid single-flux-quantum logic circuit and rapid single-flux-quantum output conversion circuit 失效
标题翻译：快速单通量 - 量子逻辑电路和快速单通量 - 量子输出转换电路
公开(公告)号：US06724216B2
公开(公告)日：2004-04-20
申请号：US10142932
申请日：2002-05-13
申请人： Hideo Suzuki , Shuichi Nagasawa , Kazunori Miyahara , Youichi Enomoto
发明人： Hideo Suzuki , Shuichi Nagasawa , Kazunori Miyahara , Youichi Enomoto
IPC分类号： H03K19195
CPC分类号： H03K19/1954
摘要： A rapid single-flux-quantum RSFQ logic circuit includes a first circuit portion having a first end grounded and having in-series connected first and second Josephson junctions. A second circuit portion has a first end grounded and has in-series connected third and fourth Josephson junctions. A first inductance element connects a second end of the first circuit portion to a second end of the second circuit portion. A tap is provided in the first inductance element, an input current signal being supplied to the tap. A bias current source is connected to a first connection node between the first and second Josephson junctions. A second inductance element connects the first connection node to a second connection node between the third and fourth Josephson junctions. A superconducting quantum interference device has fifth and sixth Josephson junctions and is coupled to the second inductance element through a magnetic field.
摘要翻译：快速单通量量子RSFQ逻辑电路包括第一电路部分，其具有接地的第一端并具有串联连接的第一和第二约瑟夫逊结。第二电路部分具有第一端接地并具有串联连接的第三和第四约瑟夫逊结。第一电感元件将第一电路部分的第二端连接到第二电路部分的第二端。在第一电感元件中提供抽头，输入电流信号被提供给抽头。偏置电流源连接到第一和第二约瑟夫逊结之间的第一连接节点。第二电感元件将第一连接节点连接到第三和第四约瑟夫森结之间的第二连接节点。超导量子干涉装置具有第五和第六约瑟夫逊结，并且通过磁场耦合到第二电感元件。

2. 发明授权

US06242939B1 Superconducting circuit having superconductive circuit device of voltage-type logic and superconductive circuit device of fluxoid-type logic device selectively used therein 有权
标题翻译：超导电路具有电压型逻辑的超导电路器件和选择性地使用其中的磁通型逻辑器件的超导电路器件
公开(公告)号：US06242939B1
公开(公告)日：2001-06-05
申请号：US09517444
申请日：2000-03-02
申请人： Shuichi Nagasawa , Kazunori Miyahara , Youichi Enomoto
发明人： Shuichi Nagasawa , Kazunori Miyahara , Youichi Enomoto
IPC分类号： H03K19195
CPC分类号： G11C11/44 , H03K19/1958
摘要： A superconducting circuit device of a voltage-type logic device is large in current driving capability and, accordingly, electric power consumption; however, the switching speed is not so fast, and a superconducting circuit device of a fluxoid-type logic device is small in current driving capability and, accordingly, the electric power consumption; however the switching speed is faster than that of the superconducting circuit device of the voltage-type logic device, wherein the superconducting circuit device of the voltage-type logic device and the superconducting circuit device of the fluxoid-type logic device are selectively used in a superconducting circuit such as a superconducting random access memory, a superconducting NOR circuit and a superconducting signal converting circuit so as to realize small electric power consumption and high-speed switching action.
摘要翻译：电压型逻辑器件的超导电路器件的电流驱动能力大，因此电耗; 然而，切换速度不是那么快，而磁通型逻辑装置的超导电路装置的电流驱动能力较小，因此电力消耗; 然而开关速度比电压型逻辑器件的超导电路器件更快，其中电压型逻辑器件的超导电路器件和磁通型逻辑器件的超导电路器件选择性地用于超导电路如超导随机存取存储器，超导NOR电路和超导信号转换电路，以实现小功耗和高速切换动作。

3. 发明授权

US6074768A Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films 失效
标题翻译：用于形成氧化物超导体薄膜的方法和氧化物超导体薄膜的叠层
公开(公告)号：US6074768A
公开(公告)日：2000-06-13
申请号：US212721
申请日：1998-12-16
申请人： Yoshinori Matsunaga , Shuichi Fujino , Akihiro Odagawa , Youichi Enomoto
发明人： Yoshinori Matsunaga , Shuichi Fujino , Akihiro Odagawa , Youichi Enomoto
IPC分类号： C01G1/00 , C01G3/00 , C04B41/50 , C04B41/85 , C23C14/08 , C30B23/02 , C30B23/08 , C30B25/06 , C30B25/18 , C30B29/22 , H01L39/02 , H01L39/24 , B32B9/00 , B32B12/00
CPC分类号： C04B41/009 , C04B41/5074 , C04B41/85 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2458 , Y10S428/93 , Y10S505/742
摘要： A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
摘要翻译：形成具有不同晶轴取向的123型铜氧化物超导体薄膜的层叠体的制造方法，具有优异的超导性的123型薄铜氧化物超导体层的层叠体和约瑟夫逊结的配线。氧化物超导体的c轴取向单晶薄膜，其Y：Ba：Cu原子比基本上为1:2:3，晶格常数为11.60埃，在20℃的温度下为11.70埃在单晶衬底上形成氧分压为160Torr的DEG，并且根据溅射沉积方法在上述层叠膜上形成所述氧化物超导体的a轴取向单晶薄膜。

4. 发明授权

US6011981A Oxide superconductor multilayered film and oxide superconductor josephson device 失效
标题翻译：氧化物超导体多层膜和氧化物超导体约瑟夫森装置
公开(公告)号：US6011981A
公开(公告)日：2000-01-04
申请号：US814172
申请日：1997-03-10
申请人： Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
发明人： Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
IPC分类号： H01L39/12 , H01L39/22
CPC分类号： H01L39/128 , H01L39/225 , Y10S505/702
摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.
摘要翻译：一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜，这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜耗尽量）交替堆叠。氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。可以通过使用多层膜来提供约瑟夫森装置。

5. 发明授权

US5883051A High Tc superconducting Josephson junction element 失效
标题翻译：高Tc超导约瑟夫逊结元件
公开(公告)号：US5883051A
公开(公告)日：1999-03-16
申请号：US735117
申请日：1996-10-22
申请人： Yoshihiro Ishimaru , Jian-Guo Wen , Kunihiko Hayashi , Youichi Enomoto , Naoki Koshizuka , Shoji Tanaka
发明人： Yoshihiro Ishimaru , Jian-Guo Wen , Kunihiko Hayashi , Youichi Enomoto , Naoki Koshizuka , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/225 , Y10S428/93 , Y10S505/702
摘要： A superconducting Josephson junction element including a first, a-axis oriented, superconductive metal oxide crystal grain having a first area of a {001} plane, and a second, c-axis oriented, superconductive metal oxide crystal grain having a second area of a {110} plane, wherein the first and second crystal grains are in contact with each other at the first and second areas to form a grain boundary therebetween.
摘要翻译：一种超导约瑟夫逊结元件，其包括具有第一面积{001}面的第一，a轴取向的超导金属氧化物晶粒和第二c轴取向的超导金属氧化物晶粒，其具有第二面积 {110}面，其中第一和第二晶粒在第一和第二区域彼此接触以在它们之间形成晶界。

6. 发明授权

US5877122A Josephson element having a NdBa.sub.2 Cu.sub.3 O.sub.7-y superconductor thin-film wiring pattern 失效
标题翻译：具有NdBa2Cu3O7-y超导体薄膜布线图案的约瑟夫逊元件
公开(公告)号：US5877122A
公开(公告)日：1999-03-02
申请号：US649205
申请日：1996-05-17
申请人： Yoshihiro Ishimaru , Yuuji Mizuno , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Yoshihiro Ishimaru , Yuuji Mizuno , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , Y10S505/702
摘要： An oxide superconductor element, produced by forming a damaged region on a substrate surface by the Ga.sup.+ focusing ion beam method and then depositing an oxide superconductor thin-film over it, is characterized in that a NdBa.sub.2 Cu.sub.3 O.sub.7-y (0.ltoreq.y.ltoreq.0.5) oxide superconductor is used in a tunnel junction having a tunneling barrier region with weak superconductivity.
摘要翻译：通过Ga +聚焦离子束法在衬底表面上形成受损区域，然后在其上沉积氧化物超导体薄膜产生的氧化物超导体元件的特征在于，NdBa2Cu3O7-y（0≤y< = 0.5）氧化物超导体用于具有弱超导性的隧道势垒区的隧道结中。

7. 发明授权

US5728214A Surface treatment of an oxide LNBA2CU307-X single crystal 失效
标题翻译：表面处理氧化物LNBA2CU307-X单晶
公开(公告)号：US5728214A
公开(公告)日：1998-03-17
申请号：US524490
申请日：1995-09-06
申请人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
发明人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203 , C30B25/02
CPC分类号： C30B33/00 , C30B29/22 , C30B29/225
摘要： When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
摘要翻译：当加热铜盐氧化物LnBa2Cu3O7-x（Ln = Y，Pr或Sm; 0.30

8. 发明授权

US5650376A (Nd, Ba).sub.3 Cu.sub.3 O.sub.7-d superconductor film 失效
标题翻译：（Nd，Ba）3Cu3O7-d超导体膜
公开(公告)号：US5650376A
公开(公告)日：1997-07-22
申请号：US554585
申请日：1995-11-06
申请人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
发明人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24 , B32B9/00
CPC分类号： H01L39/126 , Y10S428/93 , Y10S505/701
摘要： A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.
摘要翻译：公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

9. 发明授权

US5571778A Superconducting junction material and process of preparing same 失效
标题翻译：超导接头材料及其制备方法
公开(公告)号：US5571778A
公开(公告)日：1996-11-05
申请号：US413999
申请日：1995-03-30
申请人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L27/18 , H01L39/14 , H01L39/24 , B44C1/22 , B05D5/00
CPC分类号： H01L27/18 , H01L39/145 , H01L39/2496 , Y10S505/728
摘要： A superconductor junction material is disclosed which comprises a substrate of a single crystal, and at least flux flow element, and optionally at least one Josephson junction element, provided on the surface, each of the flux flow and Josephson junction elements being formed of a superconducting oxide layer having a weak link. The flux flow and Josephson junction elements are prepared by vacuum deposition at different oxygen partial pressures.
摘要翻译：公开了一种超导体接合材料，其包括单晶体的衬底，以及设置在表面上的至少一个通量流动元件和任选的至少一个约瑟夫逊结元件，每个磁通流和约瑟夫逊结元件由超导体具有弱连接的氧化物层。通过真空沉积在不同的氧分压下制备通量流和约瑟夫逊结元件。

10. 发明授权

US5534715A Josephson junction in a wiring pattern of a superconductor oxide 失效
标题翻译：约瑟夫逊结在超导体氧化物的布线图中
公开(公告)号：US5534715A
公开(公告)日：1996-07-09
申请号：US148277
申请日：1993-11-08
申请人： Christian Neumann , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Christian Neumann , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496
摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.
摘要翻译：公开了一种约瑟夫逊结，其包括具有基本上平坦的表面的单晶的衬底，形成在衬底的平坦表面上的氧化物超导体的布线图案和形成为具有300nm或更小的宽度的改变区域在与布线图案相交的布线图案中，改变区域两侧的布线图案的晶体取向彼此相等。约瑟夫逊结可以通过包括以下步骤的方法来制备：（a）用普通金属涂覆单晶的衬底的表面以在衬底的表面上形成保护层; （b）用聚焦离子束照射保护层的预定部分，使得在基板中形成照射部分; （c）从衬底上去除保护层; 以及（d）在已经去除了保护层的基板的表面上形成氧化物超导体的布线图案，使得布线图案与基板的照射部分交叉，从而在布线图案中形成改变部分位于照射部分上方。

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