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11. 发明授权

US07482283B2 Thin film forming method and thin film forming device 有权
标题翻译：薄膜形成方法和薄膜形成装置
公开(公告)号：US07482283B2
公开(公告)日：2009-01-27
申请号：US10450161
申请日：2001-12-11
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/44 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45565 , C23C16/0218 , C23C16/34 , C23C16/45525 , C23C16/45531 , C23C16/52 , H01J37/32935 , H01L21/28556 , H01L21/28568
摘要： The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.
摘要翻译：本发明涉及使用ALD工艺形成薄膜的方法和装置。在ALD过程之前，一个接一个地提供多个源气体中的每一个，多次进行预处理过程，其中同时供给源气体以缩短潜伏期并提高生产量。

12. 发明申请

US20060068097A1 METHOD FOR FORMING A PASSIVATED METAL LAYER 有权
标题翻译：形成钝化金属层的方法
公开(公告)号：US20060068097A1
公开(公告)日：2006-03-30
申请号：US10711717
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
摘要翻译：用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层从而抑制铼金属表面上含铼结核的氧诱导生长。

13. 发明授权

US06924223B2 Method of forming a metal layer using an intermittent precursor gas flow process 有权
标题翻译：使用间歇性前体气体流动方法形成金属层的方法
公开(公告)号：US06924223B2
公开(公告)日：2005-08-02
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要翻译：提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。进行该过程，直到在基底上形成具有所需厚度的金属层。金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

14. 发明申请

US20050079708A1 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US20050079708A1
公开(公告)日：2005-04-14
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

15. 发明申请

US20050069632A1 Method of forming a metal layer using an intermittent precursor gas flow process 有权
公开(公告)号：US20050069632A1
公开(公告)日：2005-03-31
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/4763
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

16. 发明申请

US20090142491A1 Method of Film Deposition and Film Deposition System 审中-公开
标题翻译：膜沉积和膜沉积系统的方法
公开(公告)号：US20090142491A1
公开(公告)日：2009-06-04
申请号：US11988298
申请日：2006-07-07
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/44
CPC分类号： C23C16/46 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76843
摘要： The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.
摘要翻译：本发明是一种薄膜沉积方法，其包括向能够抽真空的处理容器供给高熔点有机金属材料气体的第一气体供给步骤和向处理过程中供给第二气体供给步骤容器，由选自含氮气体，含硅气体和含碳气体中的一种或两种或更多种气体组成的气体，其中选择由一种或两种或更多种化合物组成的薄金属化合物膜从高熔点金属氮化物，高熔点金属硅酸盐和高熔点金属碳化物沉积在被处理物体的表面上，放置在处理容器中。交替进行第一和第二供气步骤，在这些步骤中，待处理物体保持在高熔点有机金属材料的分解 - 起始温度以上的温度。

17. 发明授权

US07189431B2 Method for forming a passivated metal layer 有权
标题翻译：形成钝化金属层的方法
公开(公告)号：US07189431B2
公开(公告)日：2007-03-13
申请号：US10711717
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , Paul Jamison
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , Paul Jamison
IPC分类号： C23C16/16
CPC分类号： H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
摘要翻译：用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层从而抑制铼金属表面上含铼结核的氧诱导生长。

18. 发明授权

US07078341B2 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US07078341B2
公开(公告)日：2006-07-18
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2，（CO）10，Cr（CO）6和Ru 3（CO）_{12 。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层，约200毫托。}

19. 发明申请

US20060068098A1 Deposition of ruthenium metal layers in a thermal chemical vapor deposition process 审中-公开
标题翻译：在热化学气相沉积工艺中沉积钌金属层
公开(公告)号：US20060068098A1
公开(公告)日：2006-03-30
申请号：US10949803
申请日：2004-09-27
申请人： Hideaki Yamasaki , Yumiko Kawano , Gert Leusink
发明人： Hideaki Yamasaki , Yumiko Kawano , Gert Leusink
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76873
摘要： A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.
摘要翻译：介绍了一种在衬底上沉积Ru金属层的方法。该方法包括在处理室中提供衬底，在工艺气体中引入工艺气体，其中工艺气体包括载气，羰基钌前体和氢。该方法还包括通过热化学气相沉积工艺在基底上沉积Ru金属层。在本发明的一个实施方案中，羰基钌前驱体可含有Ru 3（CO）12。并且Ru金属层可以在衬底温度下沉积，导致Ru金属层主要具有Ru（002）晶体取向。

20. 发明授权

US06919268B1 Method of manufacturing a WN contact plug 失效
标题翻译：制造WN接触塞的方法
公开(公告)号：US06919268B1
公开(公告)日：2005-07-19
申请号：US10451598
申请日：2001-12-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/28556 , H01L21/28568
摘要： WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).
摘要翻译： WF 6用作钨的源气体，NH 3被用作氮的源气体。 WF 6分压的分压设定为高于NH 3的分压。衬底温度设定为约400℃至450℃。沉积氮化钨，然后加热，形成接触塞（106）。

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