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11. 发明授权

US06200651B1 Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source 失效
标题翻译：响应于脉冲微波源的真空等离子体处理器中的化学气相沉积方法
公开(公告)号：US06200651B1
公开(公告)日：2001-03-13
申请号：US08885864
申请日：1997-06-30
申请人： Gregory A. Roche , William R. Harshbarger
发明人： Gregory A. Roche , William R. Harshbarger
IPC分类号： H05H130
CPC分类号： C23C16/401 , C23C16/511 , C23C16/515 , H01J37/32192
摘要： A dielectric layer is deposited on a workpiece by a chemical vapor deposition method in an electron cyclotron resonance vacuum plasma processor having a plasma chamber responsive to a repetitively pulsed microwave field and gases from a plasma source. A reaction chamber responds to at least one reacting gas containing at least one element that chemically reacts in the presence of the plasma with at least one element in at least one of the gases from the plasma source to form the deposited layer on the workpiece. The turn off periods are long enough to cause electrons in the plasma on the deposited dielectric layer to be cooled sufficiently (from about 3.5 eV to a lower value having a minimum value of about 0.1 eV) to reduce the tendencies for opposite polarity charges to be established across the deposited dielectric layer and for damaging discharge current to flow across the deposited dielectric layer. The layer is deposited in a gap having an initial aspect ratio of at least about 1:1; the turn on and turn off times are such as to cause the gap to be bridged by a different deposited film each time the microwave energy is turned on. The films build up to form a layer. The turn off time is greatest during initial deposition of the layer and becomes zero as the gap is filled. The peak power per pulse and the time between pulses are controlled.
摘要翻译：通过化学气相沉积法在电子回旋共振真空等离子体处理器中沉积介电层，该电子回旋共振真空等离子体处理器具有响应于重复脉冲的微波场和来自等离子体源的气体的等离子体室。反应室响应于至少一种反应气体，其包含至少一种在等离子体存在下化学反应的元素和来自等离子体源的至少一种气体中的至少一种元素的反应气体，以在工件上形成沉积层。关断周期足够长以使得沉积的电介质层上的等离子体中的电子被充分冷却（从约3.5eV到具有最小值约0.1eV的较低值），以将相反极性电荷的趋势降低为建立在沉积的介电层两侧并损坏放电电流流过沉积的介电层。该层沉积在初始纵横比为至少约1:1的间隙中; 每次微波能量接通时，导通和关闭时间都使得间隙被不同的沉积膜桥接。电影形成一层。在层的初始沉积期间，关闭时间最大，并且随着间隙被填充而变为零。每个脉冲的峰值功率和脉冲之间的时间被控制。

12. 发明授权

US06858548B2 Application of carbon doped silicon oxide film to flat panel industry 失效
标题翻译：碳掺杂氧化硅膜应用于平板工业
公开(公告)号：US06858548B2
公开(公告)日：2005-02-22
申请号：US10125961
申请日：2002-04-18
申请人： Tae Kyung Won , Quanyuan Shang , William R. Harshbarger
发明人： Tae Kyung Won , Quanyuan Shang , William R. Harshbarger
IPC分类号： C23C16/40 , C23C16/509 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/31 , H01L21/469
CPC分类号： G02F1/1362 , C23C16/401 , C23C16/5096 , G02F1/136227 , H01L27/1248 , Y10T428/31663
摘要： A process for depositing a low dielectric constant layer (k
摘要翻译：一种用于在平板显示器和平板显示器上沉积低介电常数层（k <3）的工艺。该方法包括使一种或多种有机硅化合物与含氧化合物以约0.345W / cm 2至约1.265W / cm 2的RF功率水平反应。平板显示器包括具有第一基板，沉积在第一基板上的多个屏障，第二基板，沉积在第二基板上的低介电常数层（k <3）的等离子体显示面板，以及多个接地电极形成在阻挡层和电介质层之间。

13. 发明授权

US06432255B1 Method and apparatus for enhancing chamber cleaning 有权
标题翻译：用于增强腔室清洁的方法和装置
公开(公告)号：US06432255B1
公开(公告)日：2002-08-13
申请号：US09494581
申请日：2000-01-31
申请人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
发明人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
IPC分类号： H05H100
CPC分类号： H01L21/67063 , H01L21/67069
摘要： A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.
摘要翻译：提供了一种用于在室内处理基板并且用于从腔室部件清洗积聚的材料的系统。该系统包括适于产生反应性气体种类的反应物种发生器，用于从腔室部件化学蚀刻积聚的材料，以及处理室，其具有至少一个具有暴露于反应性物质的镜面抛光表面的部件。优选地，对室清洁效率具有最大的影响，镜面抛光表面是诸如气体分配板或背板的部件的表面，和/或是多个较小部件的表面（例如，室壁衬套，气体导电线等），以便构成暴露于反应性物质的大部分表面积。最优选地，反应性物质接触的所有裸铝表面被镜面抛光。

14. 发明授权

US06352910B1 Method of depositing amorphous silicon based films having controlled conductivity 失效
标题翻译：沉积具有受控导电性的非晶硅基膜的方法
公开(公告)号：US06352910B1
公开(公告)日：2002-03-05
申请号：US09249041
申请日：1999-02-12
申请人： William R. Harshbarger , Takako Takehara , Jeff C. Olsen , Regina Qiu , Yvonne LeGrice , Guofu J. Feng , Robert M. Robertson , Kam Law
发明人： William R. Harshbarger , Takako Takehara , Jeff C. Olsen , Regina Qiu , Yvonne LeGrice , Guofu J. Feng , Robert M. Robertson , Kam Law
IPC分类号： H01L2120
CPC分类号： C23C16/24
摘要： Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.
摘要翻译：描述了制备具有受控电阻率和低应力的非晶硅基膜的沉积方法。这种膜可用作FED制造中的中间层。它们也可用于需要具有在绝缘体和导体之间的范围内的受控电阻率的膜的其它电子器件。本发明中描述的沉积方法采用化学气相沉积或等离子体增强化学气相沉积的方法; 也可以使用其它成膜技术，例如物理气相沉积。在一个实施方案中，通过向沉积室中引入硅基挥发物，包含一种或多种用于增加非晶硅基膜的导电性的组分的增加电导率的挥发性，并且导电性 - 降低挥发性，包括一种或多种用于降低非晶硅基膜的导电性的组分。

15. 发明授权

US08002896B2 Shadow frame with cross beam for semiconductor equipment 有权
标题翻译：用于半导体设备的横梁的阴影框架
公开(公告)号：US08002896B2
公开(公告)日：2011-08-23
申请号：US11248385
申请日：2005-10-11
申请人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
发明人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
IPC分类号： C23C16/04 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.
摘要翻译：一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。

16. 发明授权

US07160392B2 Method for dechucking a substrate 失效
标题翻译：剥离基材的方法
公开(公告)号：US07160392B2
公开(公告)日：2007-01-09
申请号：US10688384
申请日：2003-10-17
申请人： Quanyuan Shang , William R. Harshbarger , Robert L. Greene , Ichiro Shimizu
发明人： Quanyuan Shang , William R. Harshbarger , Robert L. Greene , Ichiro Shimizu
IPC分类号： H01L21/027 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/458
摘要： A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.
摘要翻译：提供了一种用于对基板进行脱扣的基板支撑组件和方法。在一个实施例中，支撑组件包括具有支撑表面的基板支撑件，第一组提升销和可移动地设置穿过基板支撑件的一个或多个其他提升销。当销处于致动位置时，第一组提升销和一个或多个提升销从支撑表面突出。当处于致动位置时，第一组提升销与支撑表面比一个或多个其他提升销突出较长的距离。在本发明的另一方面，提供了一种用于从基板支撑件去除基板的方法。在一个实施例中，该方法包括以下步骤：将第一组提升销投影在衬底支撑件的表面之上的第一距离处，并且将第二组提升销投影在衬底支撑件的表面上方的第二距离处，该第二组提升销小于第一个距离。

17. 发明授权

US06960263B2 Shadow frame with cross beam for semiconductor equipment 有权
标题翻译：用于半导体设备的横梁的阴影框架
公开(公告)号：US06960263B2
公开(公告)日：2005-11-01
申请号：US10136249
申请日：2002-04-25
申请人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
发明人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
IPC分类号： C23C16/04 , C23C16/458 , H01L21/205 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.
摘要翻译：一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。

18. 发明授权

US06863077B2 Method and apparatus for enhanced chamber cleaning 有权
标题翻译：用于增强腔室清洁的方法和装置
公开(公告)号：US06863077B2
公开(公告)日：2005-03-08
申请号：US10195718
申请日：2002-07-15
申请人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
发明人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
IPC分类号： B08B7/00 , B08B9/08 , C23C16/44 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , C25F3/00
CPC分类号： H01L21/67063 , H01L21/67069
摘要： A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.
摘要翻译：提供了一种用于在室内处理基板并且用于从腔室部件清洗积聚的材料的系统。该系统包括适于产生反应性气体种类的反应物种发生器，用于从腔室部件化学蚀刻积聚的材料，以及处理室，其具有至少一个具有暴露于反应物质的镜面抛光表面的部件。优选地，为了对室清洁效率具有最大的影响，镜面抛光表面是诸如气体分配板或背板的部件的表面，和/或是多个较小部件的表面（例如，室壁衬套，气体导电线等），以便构成暴露于反应性物质的大部分表面积。最优选地，反应性物质接触的所有裸铝表面被镜面抛光。

19. 发明授权

US07915114B2 Low temperature process for TFT fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US07915114B2
公开(公告)日：2011-03-29
申请号：US11946040
申请日：2007-11-27
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/8238
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2等离子体。在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下将硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

20. 发明授权

US07086918B2 Low temperature process for passivation applications 有权
标题翻译：钝化应用的低温工艺
公开(公告)号：US07086918B2
公开(公告)日：2006-08-08
申请号：US10317774
申请日：2002-12-11
申请人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
发明人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01L51/5253
摘要： An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.
摘要翻译：一种有机电致发光器件，包括在衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。在一个实施例中，在阴极上沉积保护层之前，将阴极层经受H 2 O 3等离子体。在另一个实施方案中，有机电致发光器件被封装在阴极层上的内部封装层和内部封装层上的外部封装层。内层被优化用于与阴极层的粘附。

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