专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120171646A1 AUTOMATIC DIET PLANNING METHOD AND MOBILE DEVICE FOR PERFORMING THE SAME 审中-公开
标题翻译：自动饮食计划方法和用于执行该方法的移动装置
公开(公告)号：US20120171646A1
公开(公告)日：2012-07-05
申请号：US13289057
申请日：2011-11-04
申请人： Li-Ju Chen , Mark Hsiao
发明人： Li-Ju Chen , Mark Hsiao
IPC分类号： G09B19/00
CPC分类号： G09B19/0092
摘要： An automatic diet planning method includes receiving, by a computing device, user input of a nutrition constraint on a type of nutrition; receiving user input of a preference constraint on a type of user preference, wherein the user preference has nothing to do with nutrition; providing to the user a plurality of meal items; pre-determining a nutrition value for each meal item regarding the type of nutrition; pre-determining a preference value for each meal item regarding the user preference; and receiving from the user a selection of at least one planned meal item from the plurality of meal items according to the nutrition constraint and the preference constraint, wherein the planned meal item has the nutrition value and the preference value respectively complying with the nutrition constraint and the preference constraint.
摘要翻译：自动饮食计划方法包括：通过计算设备接收对营养类型的营养约束的用户输入; 接收对用户偏好类型的偏好约束的用户输入，其中所述用户偏好与营养无关; 向用户提供多个膳食物品; 预先确定每个膳食项目关于营养类型的营养价值; 预先确定每个膳食项目关于用户偏好的偏好值; 并且根据营养约束和偏好约束从用户接收来自多个膳食项目的至少一个计划膳食项目的选择，其中所述计划膳食项目具有分别符合营养约束的营养价值和偏好值，以及偏好约束。

2. 发明申请

US20120183932A1 Location-Aware Nutrition Management 审中-公开
标题翻译：位置意识营养管理
公开(公告)号：US20120183932A1
公开(公告)日：2012-07-19
申请号：US13007186
申请日：2011-01-14
申请人： Hung-Yang Chang , Mark Hsiao , Pei-Yun S. Hsueh , Leslie S. Liu , Liangzhao Zeng
发明人： Hung-Yang Chang , Mark Hsiao , Pei-Yun S. Hsueh , Leslie S. Liu , Liangzhao Zeng
IPC分类号： G09B19/00
CPC分类号： G09B5/125
摘要： Techniques for providing personalized location-aware nutrition management information are provided. The techniques include receiving geographical coordinates of an individual, acquiring nutritional information from one or more food providers within a designated proximity of the geographical coordinates of the individual, generating one or more nutrition selection options for the individual based on the nutritional information from the one or more food providers within a designated proximity of the geographical coordinates of the individual and dynamic nutritional guidelines for the individual, and outputting the one or more nutrition selection options to the individual.
摘要翻译：提供了提供个性化位置感知营养管理信息的技术。所述技术包括接收个人的地理坐标，从指定的个人地理坐标附近的一个或多个食物提供者获取营养信息，基于来自所述个体的营养信息为个人生成一个或多个营养选择选项在个人的个人和动态营养指南的地理坐标指定的附近的更多的食物提供者，以及将一种或多种营养选择选项输出给个体。

3. 发明申请

US20080087960A1 Low Temperature Process for TFT Fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US20080087960A1
公开(公告)日：2008-04-17
申请号：US11946040
申请日：2007-11-27
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L29/786 , H01L21/441
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2 H 2等离子体。在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。一层沉积在H 2 N或氩稀释条件下，并具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

4. 发明授权

US07915114B2 Low temperature process for TFT fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US07915114B2
公开(公告)日：2011-03-29
申请号：US11946040
申请日：2007-11-27
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/8238
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2等离子体。在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下将硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

5. 发明授权

US07086918B2 Low temperature process for passivation applications 有权
标题翻译：钝化应用的低温工艺
公开(公告)号：US07086918B2
公开(公告)日：2006-08-08
申请号：US10317774
申请日：2002-12-11
申请人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
发明人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01L51/5253
摘要： An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.
摘要翻译：一种有机电致发光器件，包括在衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。在一个实施例中，在阴极上沉积保护层之前，将阴极层经受H 2 O 3等离子体。在另一个实施方案中，有机电致发光器件被封装在阴极层上的内部封装层和内部封装层上的外部封装层。内层被优化用于与阴极层的粘附。

6. 发明授权

US6119451A Nitrogen oxide removal using diesel fuel and a catalyst 失效
标题翻译：使用柴油和催化剂除去氮氧化物
公开(公告)号：US6119451A
公开(公告)日：2000-09-19
申请号：US295006
申请日：1999-04-20
申请人： George E. Vogtlin , David A. Goerz , Mark Hsiao , Bernard T. Merritt , Bernie M. Penetrante , John G. Reynolds , Ray Brusasco
发明人： George E. Vogtlin , David A. Goerz , Mark Hsiao , Bernard T. Merritt , Bernie M. Penetrante , John G. Reynolds , Ray Brusasco
IPC分类号： B01D53/86 , F01N3/20 , F01N13/02 , F01N3/00 , B60K13/04
CPC分类号： F01N3/2066 , B01D53/8625 , F01N13/0097 , F01N2610/02 , F01N2610/03 , Y02T10/24
摘要： Hydrocarbons, such as diesel fuel, are added to internal combustion engine exhaust to reduce exhaust NO.sub.x in the presence of a amphoteric catalyst support material. Exhaust NO.sub.x reduction of at least 50% in the emissions is achieved with the addition of less than 5% fuel as a source of the hydrocarbons.
摘要翻译：将碳氢化合物，例如柴油燃料添加到内燃机排气中，以在存在两性催化剂载体材料的情况下减少废气NOx。通过添加少于5％的燃料作为烃的来源，实现排放中至少50％的排放NOx降低。

7. 发明授权

US07300829B2 Low temperature process for TFT fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US07300829B2
公开(公告)日：2007-11-27
申请号：US10453333
申请日：2003-06-02
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/20 , H01L21/84 , H01L21/336
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2 H 2等离子体。在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。一层沉积在H 2 N 2或氩稀释条件下，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式