专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07300829B2 Low temperature process for TFT fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US07300829B2
公开(公告)日：2007-11-27
申请号：US10453333
申请日：2003-06-02
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/20 , H01L21/84 , H01L21/336
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2 H 2等离子体。在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。一层沉积在H 2 N 2或氩稀释条件下，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

2. 发明授权

US07915114B2 Low temperature process for TFT fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US07915114B2
公开(公告)日：2011-03-29
申请号：US11946040
申请日：2007-11-27
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/8238
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2等离子体。在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下将硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

3. 发明授权

US07086918B2 Low temperature process for passivation applications 有权
标题翻译：钝化应用的低温工艺
公开(公告)号：US07086918B2
公开(公告)日：2006-08-08
申请号：US10317774
申请日：2002-12-11
申请人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
发明人： Mark Hsiao , Takako Takehara , Quanyuan Shang , William R. Harshbarger
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01L51/5253
摘要： An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.
摘要翻译：一种有机电致发光器件，包括在衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。在一个实施例中，在阴极上沉积保护层之前，将阴极层经受H 2 O 3等离子体。在另一个实施方案中，有机电致发光器件被封装在阴极层上的内部封装层和内部封装层上的外部封装层。内层被优化用于与阴极层的粘附。

4. 发明授权

US06610354B2 Plasma display panel with a low k dielectric layer 失效
公开(公告)号：US06610354B2
公开(公告)日：2003-08-26
申请号：US09886174
申请日：2001-06-18
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： C23C1640
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

5. 发明授权

US07122962B2 Plasma display panel with a low K dielectric layer 失效
标题翻译：具有低K电介质层的等离子显示面板
公开(公告)号：US07122962B2
公开(公告)日：2006-10-17
申请号：US10460837
申请日：2003-06-11
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： H01J17/49
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
摘要翻译：包括低k电介质层的等离子体显示面板。在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。在另一个实施例中，电介质层包括Black Diamond TM层。在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

6. 发明授权

US06981508B2 On-site cleaning gas generation for process chamber cleaning 失效
公开(公告)号：US06981508B2
公开(公告)日：2006-01-03
申请号：US10856654
申请日：2004-05-27
申请人： Quanyuan Shang , Sanjay Yadav , William R. Harshbarger , Kam S. Law
发明人： Quanyuan Shang , Sanjay Yadav , William R. Harshbarger , Kam S. Law
IPC分类号： B08B9/093
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

7. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

8. 发明授权

US06858548B2 Application of carbon doped silicon oxide film to flat panel industry 失效
标题翻译：碳掺杂氧化硅膜应用于平板工业
公开(公告)号：US06858548B2
公开(公告)日：2005-02-22
申请号：US10125961
申请日：2002-04-18
申请人： Tae Kyung Won , Quanyuan Shang , William R. Harshbarger
发明人： Tae Kyung Won , Quanyuan Shang , William R. Harshbarger
IPC分类号： C23C16/40 , C23C16/509 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/31 , H01L21/469
CPC分类号： G02F1/1362 , C23C16/401 , C23C16/5096 , G02F1/136227 , H01L27/1248 , Y10T428/31663
摘要： A process for depositing a low dielectric constant layer (k
摘要翻译：一种用于在平板显示器和平板显示器上沉积低介电常数层（k <3）的工艺。该方法包括使一种或多种有机硅化合物与含氧化合物以约0.345W / cm 2至约1.265W / cm 2的RF功率水平反应。平板显示器包括具有第一基板，沉积在第一基板上的多个屏障，第二基板，沉积在第二基板上的低介电常数层（k <3）的等离子体显示面板，以及多个接地电极形成在阻挡层和电介质层之间。

9. 发明授权

US06432255B1 Method and apparatus for enhancing chamber cleaning 有权
标题翻译：用于增强腔室清洁的方法和装置
公开(公告)号：US06432255B1
公开(公告)日：2002-08-13
申请号：US09494581
申请日：2000-01-31
申请人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
发明人： Sheng Sun , Quanyuan Shang , William R. Harshbarger , Robert I. Greene
IPC分类号： H05H100
CPC分类号： H01L21/67063 , H01L21/67069
摘要： A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.
摘要翻译：提供了一种用于在室内处理基板并且用于从腔室部件清洗积聚的材料的系统。该系统包括适于产生反应性气体种类的反应物种发生器，用于从腔室部件化学蚀刻积聚的材料，以及处理室，其具有至少一个具有暴露于反应性物质的镜面抛光表面的部件。优选地，对室清洁效率具有最大的影响，镜面抛光表面是诸如气体分配板或背板的部件的表面，和/或是多个较小部件的表面（例如，室壁衬套，气体导电线等），以便构成暴露于反应性物质的大部分表面积。最优选地，反应性物质接触的所有裸铝表面被镜面抛光。

10. 发明授权

US08002896B2 Shadow frame with cross beam for semiconductor equipment 有权
标题翻译：用于半导体设备的横梁的阴影框架
公开(公告)号：US08002896B2
公开(公告)日：2011-08-23
申请号：US11248385
申请日：2005-10-11
申请人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
发明人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William R. Harshbarger
IPC分类号： C23C16/04 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.
摘要翻译：一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式