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    • 12. 发明授权
    • Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same
    • 选择性地处理晶片边缘区域以增加晶片均匀性的方法,以及用于实现晶片边缘区域的系统
    • US06589875B1
    • 2003-07-08
    • US09920997
    • 2001-08-02
    • Christopher A. BodeAlexander J. Pasadyn
    • Christopher A. BodeAlexander J. Pasadyn
    • H01L21311
    • H01L21/31116H01L21/31144H01L21/32115H01L21/32139Y10S438/974
    • In one illustrative embodiment, the method includes providing a wafer including at least one non-production area, forming a process layer above the wafer, forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and performing a process operation on the exposed portion of the process layer formed above the at least one non-production area. In another aspect, the present invention is directed to a system that includes a controller for identifying at least one non-production area of a wafer, a photolithography tool for forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and an etch tool for performing an etching process on the exposed portion of the process layer formed above the at least one non-production area.
    • 在一个说明性实施例中,该方法包括提供包括至少一个非生产区域的晶片,在晶片上形成工艺层,在工艺层上方形成掩模层,掩模层被图案化,以暴露部分 处理层,形成在至少一个非生产区域上方,并且对形成在至少一个非生产区域上方的处理层的暴露部分进行处理操作。 在另一方面,本发明涉及一种系统,其包括用于识别晶片的至少一个非生产区域的控制器,用于在工艺层上方形成掩模层的光刻工具,所述掩模层被图案化,以便 暴露形成在所述至少一个非生产区域之上的所述工艺层的一部分,以及蚀刻工具,用于对形成在所述至少一个非生产区域上方的所述工艺层的所述暴露部分进行蚀刻工艺。
    • 14. 发明授权
    • Tuning of a process control based upon layer dependencies
    • 基于层依赖关系调整过程控制
    • US06823231B1
    • 2004-11-23
    • US10303307
    • 2002-11-25
    • Christopher A. BodeAlexander J. Pasadyn
    • Christopher A. BodeAlexander J. Pasadyn
    • G06F1900
    • H01L22/12
    • A method and an apparatus for selectively processing a layer of a workpiece based upon dependencies with other layers in the workpiece. A process step upon the workpiece is performed. Metrology data relating to the workpiece is acquired. A process adjustment relating to a first layer on the workpiece is calculated based upon the metrology data. A determination whether an error on a second layer on the workpiece would occur in response to an implementation of the process adjustment performed on the first layer. A magnitude of the calculated process adjustment is reduced in response to a determination that the second layer would be affected in response to the implementation of the process adjustment.
    • 一种用于基于与工件中的其它层的依赖性选择性地处理工件层的方法和装置。 执行工件上的工艺步骤。 获取与工件有关的计量数据。 基于测量数据计算与工件上的第一层有关的过程调整。 响应于在第一层上执行的过程调整的实现,确定在工件上的第二层上是否发生错误。 响应于响应于过程调整的实现而影响第二层的确定,所计算的过程调整的大小被减小。
    • 15. 发明授权
    • Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information
    • 用于控制包含前馈叠加信息的光刻重叠配准的方法和装置
    • US06737208B1
    • 2004-05-18
    • US10022488
    • 2001-12-17
    • Christopher A. BodeAlexander J. Pasadyn
    • Christopher A. BodeAlexander J. Pasadyn
    • G03F900
    • G03F7/70525
    • A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper. The controller is configured to receive a first overlay error measurement associated with the formation of a first layer on a selected wafer and determine at least one parameter in the operating recipe for performing a photolithography process on a second layer formed on the selected wafer based on at least the first overlay error measurement
    • 一种用于控制光刻工艺的方法包括在所选晶片上形成第一层。 测量与第一层相关联的第一重叠错误。 至少基于第一覆盖误差测量来确定用于在形成在第一晶片上的第二层上进行光刻工艺的操作配方中的至少一个参数。 处理线包括光刻步进机,重叠计量工具和控制器。 光刻步进器被配置为根据操作配方处理晶片。 覆盖计量工具被配置为测量与光刻步进机中的晶片的处理相关联的重叠误差。 控制器被配置为接收与所选择的晶片上形成第一层相关联的第一重叠误差测量,并确定操作配方中的至少一个参数,用于在形成于所选择的晶片上的第二层上进行光刻处理 最少重叠错误测量
    • 17. 发明授权
    • Method for prioritizing production lots based on grade estimates and output requirements
    • 根据年龄估计和产出要求确定生产批次的方法
    • US06699727B1
    • 2004-03-02
    • US09821675
    • 2001-03-29
    • Anthony J. TopracJoyce S. Oey HewettChristopher A. BodeAlexander J. PasadynAnastasia Oshelski PetersonThomas J. SondermanMichael L. Miller
    • Anthony J. TopracJoyce S. Oey HewettChristopher A. BodeAlexander J. PasadynAnastasia Oshelski PetersonThomas J. SondermanMichael L. Miller
    • G01R3126
    • H01L22/20G05B19/418G05B2219/32194G05B2219/32263Y02P90/02Y02P90/18Y02P90/20Y02P90/22
    • A method for prioritizing production flow includes processing a plurality of manufactured items in a process flow; measuring characteristics of a plurality of manufactured items in the process flow; estimating performance grades for the plurality of manufactured items based on the measured characteristics; grouping the manufactured items with like estimated performance grades; assigning priorities to groups of manufactured items with like estimated performance grades; and directing the plurality of manufactured items through the process flow based on the assigned priorities. A manufacturing system includes a plurality of processing tools adapted to process a plurality of manufactured items in a process flow, a metrology tool, and a process control server. The metrology tool is adapted to measure characteristics of a plurality of manufactured items in the process flow. The process control server is adapted to estimate performance grades for the plurality of manufactured items based on the measured characteristics, group the manufactured items with like estimated performance grades, assign priorities to groups of manufactured items with like estimated performance grades, and direct the plurality of manufactured items through the process flow based on the assigned priorities.
    • 一种用于确定生产流程优先级的方法包括在处理流程中处理多个制造的物品; 测量处理流程中的多个制成品的特性; 基于所测量的特性来估计所述多个制造物品的性能等级; 对具有相似估计性能等级的制成品进行分组; 将优先事项分配给具有类似估计绩效等级的制成品组; 以及基于所分配的优先级,通过所述处理流程来引导所述多个制造的物品。 制造系统包括多个处理工具,其适用于处理流程中的多个制造物品,计量工具和过程控制服务器。 计量工具适于测量处理流程中的多个制造物品的特性。 过程控制服务器适于基于测量的特性来估计多个制造物品的性能等级,将具有相似估计性能等级的制造物品分组,将具有相似估计性能等级的制造商品组的优先级分配给多个 基于分配的优先级,通过流程流程制造出的物品。
    • 18. 发明授权
    • Method and apparatus for modeling of batch dynamics based upon integrated metrology
    • 基于综合计量学的批量动力学建模方法和装置
    • US06698009B1
    • 2004-02-24
    • US10085938
    • 2002-02-28
    • Alexander J. PasadynChristopher A. Bode
    • Alexander J. PasadynChristopher A. Bode
    • G06F1750
    • H01L22/20H01L2223/54453
    • A method and an apparatus for performing modeling of batch dynamics in processing of semiconductor wafers. The method includes performing the process on the first semiconductor wafer in a lot, the process being controlled by a tool model, and acquiring integrated metrology data related to the process of the first semiconductor wafer using an integrated metrology tool. The method further includes performing a lot dynamic modeling process based upon an analysis of the integrated metrology data, the lot dynamic modeling process comprising adjusting the tool model based upon analysis of the integrated metrology data, and performing the process on a second semiconductor wafer in the lot based upon the adjusted tool model.
    • 一种用于在半导体晶片的处理中执行批量动力学建模的方法和装置。 该方法包括在第一半导体晶片上进行大量的处理,该工艺由工具模型控制,以及使用集成计量工具获取与第一半导体晶片的工艺相关的集成度量数据。 该方法还包括基于综合测量数据的分析来执行大量动态建模过程,批量动态建模过程包括基于集成测量数据的分析来调整工具模型,以及在第二半导体晶片上执行该过程 基于调整后的工具模型。