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11. 发明授权

US09117931B2 Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal 有权
标题翻译：具有在半导体晶体中激发的声驻波的谐振器的半导体器件
公开(公告)号：US09117931B2
公开(公告)日：2015-08-25
申请号：US13685859
申请日：2012-11-27
申请人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
发明人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
IPC分类号： H01L29/84 , H03H9/24 , H03H9/02
CPC分类号： H01L29/84 , H01L2924/1461 , H03H9/2405 , H03H2009/02314
摘要： A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
摘要翻译：根据实施例的半导体器件具有：半导体衬底; 形成在所述半导体衬底上的声谐振器，具有包括通过耗尽层与所述衬底电绝缘的杂质的半导体层，并且被配置为基于在所述半导体层中激发的声驻波以预定的谐振频率谐振; 温度检测器，形成在所述半导体衬底上，并被配置为检测所述半导体衬底的温度; 计算单元，其形成在所述半导体基板上，并且被配置为基于由所述温度检测器检测到的温度进行温度补偿的计算，所述杂质的种类和所述杂质的浓度; 以及控制器，其形成在所述半导体基板上，并且被配置为基于所述计算单元的计算结果来控制所述共振频率。

12. 发明授权

US06989222B2 Liquid developer, method of manufacturing the liquid developer, and image forming method and apparatus 失效
公开(公告)号：US06989222B2
公开(公告)日：2006-01-24
申请号：US10722512
申请日：2003-11-28
申请人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
发明人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
IPC分类号： G03G9/08
CPC分类号： G03G9/13 , G03G9/12 , G03G9/122
摘要： A liquid developer, a method of manufacturing the same and a method and apparatus for forming an image, which can attain high transfer efficiency and appropriate tolerance to repetitive image formation. The liquid developer includes toner particles dispersed in an electrically non-conductive liquid solvent. Each toner particle has a resin particle, which is non-soluble in the liquid developer, and pigment particles formed on the surface of the resin particle, whereby the pigment particles suppress contact between the resin particles. Preferably the resin particles have a glass transition temperature of not less than room temperature. One example of manufacturing the liquid developer includes a step of milling pigment particles in a resin particles dispersion liquid at a process temperature higher than the glass transition temperature of the resin particles, whereby the pigments are formed on the surface of the resin particles.

13. 发明授权

US06941091B2 Image forming apparatus and image forming method with paper cleaning device 有权
标题翻译：具有纸张清洁装置的图像形成装置和图像形成方法
公开(公告)号：US06941091B2
公开(公告)日：2005-09-06
申请号：US10254589
申请日：2002-09-26
申请人： Atsuko Iida , Mitsunaga Saito , Hideki Nukada
发明人： Atsuko Iida , Mitsunaga Saito , Hideki Nukada
IPC分类号： B65H5/00 , B65H5/06 , G03G15/00 , G03G15/10 , G03G15/16 , G03G21/00
CPC分类号： G03G15/10 , G03G15/161 , G03G15/1665 , G03G15/1695 , G03G15/6558 , G03G2215/00708 , G03G2215/017
摘要： The image forming apparatus in accordance with the present invention comprises an image forming substrate for forming an electrostatic latent image on a surface of the image forming substrate; a developing device supplying liquid developer to the electrostatic latent image to form a developed image on the image forming substrate; an intermediate transfer medium having a primary transferring position to which the developed image on the image forming substrate is transferred primarily by contacting the image forming substrate and a secondary transferring position transferring secondarily the developed image to a paper by contacting the paper; an intermediate transfer medium cleaning device adhering and removing material stuck to a surface of the intermediate transfer medium, which contacts in a place after passing through the secondary transferring position and before passing through primary transferring position; and a paper cleaning device positioned in a conveying path of a conveying device to transport the paper to the secondary transferring position, and adhering and removing material stuck to a contact surface of the paper to the intermediate transfer medium by contacting the contact surface, in order to prevent paper dust etc. stuck to the paper from adhering to the intermediate transfer medium when the secondary transferring step is carried out.
摘要翻译：根据本发明的图像形成装置包括：用于在图像形成基板的表面上形成静电潜像的图像形成基板; 将液体显影剂供应到静电潜像以在图像形成基板上形成显影图像的显影装置; 主要传送位置的中间转印介质，主图像形成基板上的显影图像主要通过接触图像形成基板和二次转印位置被转印到二次转印位置，二次转印位置通过接触纸张将显影图像二次转印到纸张上; 中间转印介质清洁装置粘附并移除粘附在中间转印介质的表面上的材料，所述中间转印介质在通过二次转印位置并在通过一次转印位置之前在一个位置接触; 以及定位在输送装置的输送路径中以将纸输送到二次转印位置的纸张清洁装置，并且通过使接触表面接触将粘合到纸张的接触表面的材料粘附并移除到中间转印介质上以防止在执行二次转印步骤时粘在纸上的纸屑等粘附到中间转印介质上。

14. 发明申请

US20050064316A1 Liquid developer, method of manufacturing the liquid developer, and image forming method and apparatus 失效
标题翻译：液体显影剂，液体显影剂的制造方法以及成像方法和装置
公开(公告)号：US20050064316A1
公开(公告)日：2005-03-24
申请号：US10948145
申请日：2004-09-24
申请人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
发明人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
IPC分类号： G03G9/12 , G03G9/13
CPC分类号： G03G9/13 , G03G9/12 , G03G9/122
摘要： A liquid developer, a method of manufacturing the same and a method and apparatus for forming an image, which can attain high transfer efficiency and appropriate tolerance to repetitive image formation. The liquid developer includes toner particles dispersed in an electrically non-conductive liquid solvent. Each toner particle has a resin particle, which is non-soluble in the liquid developer, and pigment particles formed on the surface of the resin particle, whereby the pigment particles suppress contact between the resin particles. Preferably the resin particles have a glass transition temperature of not less than room temperature. One example of manufacturing the liquid developer includes a step of milling pigment particles in a resin particles dispersion liquid at a process temperature higher than the glass transition temperature of the resin particles, whereby the pigments are formed on the surface of the resin particles.
摘要翻译：液体显影剂及其制造方法以及用于形成图像的方法和装置，其能够获得高转印效率和对重复图像形成的适当容限。液体显影剂包括分散在非导电液体溶剂中的调色剂颗粒。每个调色剂颗粒具有不溶于液体显影剂的树脂颗粒和形成在树脂颗粒表面上的颜料颗粒，由此颜料颗粒抑制树脂颗粒之间的接触。优选树脂颗粒的玻璃化转变温度不低于室温。制造液体显影剂的一个实例包括在高于树脂颗粒的玻璃化转变温度的工艺温度下将颜料颗粒研磨在树脂颗粒分散液中的步骤，由此在树脂颗粒的表面上形成颜料。

15. 发明授权

US06689526B2 Liquid developer, method of manufacturing the liquid developer, and image forming method and apparatus 失效
公开(公告)号：US06689526B2
公开(公告)日：2004-02-10
申请号：US10023768
申请日：2001-12-21
申请人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
发明人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
IPC分类号： G03G912
CPC分类号： G03G9/13 , G03G9/12 , G03G9/122
摘要： A liquid developer, a method of manufacturing the same and a method and apparatus for forming an image, which can attain high transfer efficiency and appropriate tolerance to repetitive image formation. The liquid developer includes toner particles dispersed in an electrically non-conductive liquid solvent. Each toner particle has a resin particle, which is non-soluble in the liquid developer, and pigment particles formed on the surface of the resin particle, whereby the pigment particles suppress contact between the resin particles. Preferably the resin particles have a glass transition temperature of not less than room temperature. One example of manufacturing the liquid developer includes a step of milling pigment particles in a resin particles dispersion liquid at a process temperature higher than the glass transition temperature of the resin particles, whereby the pigments are formed on the surface of the resin particles.

16. 发明授权

US4644093A Circuit board 失效
标题翻译：电路板
公开(公告)号：US4644093A
公开(公告)日：1987-02-17
申请号：US788571
申请日：1985-10-17
申请人： Kunio Yoshihara , Toshio Sudo , Atsuko Iida , Takeshi Miyagi , Tamio Saito , Shigeyuki Oe
发明人： Kunio Yoshihara , Toshio Sudo , Atsuko Iida , Takeshi Miyagi , Tamio Saito , Shigeyuki Oe
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/14 , H01L23/15 , H01L23/522 , H01L23/64 , H05K1/02 , H05K1/03
CPC分类号： H01L23/642 , H01L23/147 , H01L23/15 , H01L2924/0002
摘要： A circuit board comprises a substrate made of a semi-insulating or insulating material, an insulating layer formed on the substrate and having a lower dielectric constant than the dielectric constant of the substrate, and a plurality of wiring conductors formed at predetermined intervals on the insulating layer. The insulating layer has a thickness determined according to the distance between adjacent wiring conductors and equal to 0.5 to 2.5 times the distance noted above, for the purpose of reducing cross-talk noise.
摘要翻译：电路板包括由半绝缘或绝缘材料制成的衬底，形成在衬底上并且具有比衬底的介电常数低的介电常数的绝缘层，以及在绝缘层上以预定间隔形成的多个布线导体层。为了减少串扰噪声，绝缘层具有根据相邻布线导体之间的距离确定的厚度，等于上述距离的0.5至2.5倍。

17. 发明授权

US08513715B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08513715B2
公开(公告)日：2013-08-20
申请号：US12873788
申请日：2010-09-01
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/41758 , H01L29/4238 , H03B5/326
摘要： According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is Vth, a gate voltage Vgs applied between the source terminal and the gate terminal and a drain voltage Vds applied between the source terminal and the drain terminal satisfy the following relationship: Vth
摘要翻译：根据实施例，本发明提供一种与其他电子电路容易集成并且作为高频精度的振荡器起作用的半导体器件。半导体器件包括：半导体衬底; 元素区域围绕元件区域的元件隔离区域; 场效应晶体管，其包括形成在所述元件区域，源极和漏极区域上的栅极电极以及介于所述源极区域和所述漏极区域之间的沟道区域; 栅极，源极和漏极端子，分别用于向栅极电极，源极区域和漏极区域施加电压; 以及电连接到沟道区的输出端子。当场效应晶体管的阈值电压为Vth时，施加在源极端子和栅极端子之间的栅极电压Vgs和施加在源极端子和漏极端子之间的漏极电压Vds满足以下关系：Vth

18. 发明申请

US20120061768A1 POWER AMPLIFIER 失效
标题翻译：功率放大器
公开(公告)号：US20120061768A1
公开(公告)日：2012-03-15
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/092
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

19. 发明申请

US20110220974A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110220974A1
公开(公告)日：2011-09-15
申请号：US12873788
申请日：2010-09-01
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/41758 , H01L29/4238 , H03B5/326
摘要： According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is Vth, a gate voltage Vgs applied between the source terminal and the gate terminal and a drain voltage Vds applied between the source terminal and the drain terminal satisfy the following relationship: Vth
摘要翻译：根据实施例，本发明提供一种与其他电子电路容易集成并且作为高频精度的振荡器起作用的半导体器件。半导体器件包括：半导体衬底; 元素区域围绕元件区域的元件隔离区域; 场效应晶体管，其包括形成在所述元件区域，源极和漏极区域上的栅极电极以及介于所述源极区域和所述漏极区域之间的沟道区域; 栅极，源极和漏极端子，分别用于向栅极电极，源极区域和漏极区域施加电压; 以及电连接到沟道区的输出端子。当场效应晶体管的阈值电压为Vth时，施加在源极端子和栅极端子之间的栅极电压Vgs和施加在源极端子和漏极端子之间的漏极电压Vds满足以下关系：Vth

20. 发明授权

US06977130B2 Method of manufacturing an electronic circuit and manufacturing apparatus of an electronic circuit 失效
标题翻译：电子电路的制造方法和电子电路的制造装置
公开(公告)号：US06977130B2
公开(公告)日：2005-12-20
申请号：US10618631
申请日：2003-07-15
申请人： Hideo Aoki , Chiaki Takubo , Atsuko Iida , Yasuyuki Hotta , Naoko Yamaguchi
发明人： Hideo Aoki , Chiaki Takubo , Atsuko Iida , Yasuyuki Hotta , Naoko Yamaguchi
IPC分类号： H01L21/28 , G03G5/05 , G03G9/09 , G03G13/26 , H01L21/288 , H01L21/3205 , H05K3/10 , H05K3/18 , H05K3/24 , H05K3/46 , G03G13/16 , B05D1/04 , H05C1/00
CPC分类号： H05K3/4664 , G03G5/056 , G03G9/0926 , G03G13/26 , G03G15/224 , G03G15/225 , G03G15/6585 , G03G15/6591 , H01L24/19 , H01L2224/04105 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/12042 , H01L2924/15153 , H01L2924/15787 , H05K3/1266 , H05K3/246 , H05K2201/0212 , H05K2201/0347 , H05K2203/0425 , H05K2203/0517 , H05K2203/0522 , H05K2203/0537 , H01L2924/00
摘要： A method of manufacturing an electronic circuit satisfying demands for cost reduction, diversified small-quantity production, and a shorter cycle of design, manufacture, evaluation, correction, and so on is provided. The method includes at least forming a first pattern or forming a second pattern. Forming the first pattern comprises: forming a visible image on an electrostatic latent image formed on a photosensitive base, by the adhesion of charged particles essentially made of a resin; transferring the visible image onto the intermediate transfer base by the contact and pressurization of the visible image; heating/softening on the intermediate transfer base; and transferring a heated/softened resin layer onto a base material by the contact and pressurization of the resin layer. In forming the second pattern, using charged particles containing conductive metal particulates, a conductor metal layer is formed by electroless plating after a metal-containing resin pattern is transferred similarly to the first pattern formation.
摘要翻译：提供了一种制造满足成本降低，多样化的小批量生产和更短的设计，制造，评估和校正周期的电子电路的方法。该方法包括至少形成第一图案或形成第二图案。形成第一图案包括：通过基本上由树脂制成的带电粒子的粘附在形成在感光基底上的静电潜像上形成可见图像; 通过可见图像的接触和加压将可见图像转印到中间转印基底上; 在中间转移基体上加热/软化; 并通过树脂层的接触和加压将加热/软化的树脂层转移到基材上。在形成第二图案时，使用含有导电金属微粒的带电粒子，在与第一图案形成类似地转移含金属的树脂图案之后，通过无电镀形成导体金属层。

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