专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070102812A1 Reduction of macro level stresses in copper/Low-K wafers by altering aluminum pad/passivation stack to reduce or eliminate IMC cracking in post wire bonded dies 有权
标题翻译：通过改变铝焊盘/钝化层来减少或消除后线焊接模具中的IMC裂纹来减少铜/低K晶片中的宏观水平应力
公开(公告)号：US20070102812A1
公开(公告)日：2007-05-10
申请号：US11269275
申请日：2005-11-08
申请人： Sey-Shing Sun , Jayanthi Pallinti , Dilip Vijay , Hemanshu Bhatt , Hong Ying , Chiyi Kao , Peter Burke
发明人： Sey-Shing Sun , Jayanthi Pallinti , Dilip Vijay , Hemanshu Bhatt , Hong Ying , Chiyi Kao , Peter Burke
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05124 , H01L2224/05147 , H01L2224/05624 , H01L2224/05644 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48624 , H01L2224/48644 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/04953 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： A pad structure and passivation scheme which reduces or eliminates IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing. A thick 120 nm barrier layer can be provided between a 1.2 μm aluminum layer and copper. Another possibility is to effectively split up the barrier layer, where the aluminum layer is disposed between the two barrier layers. The barrier layers may be 60 nm while the aluminum layer which is disposed between the barrier layers may be 0.6 μm. Another possibility is provide an extra 0.6 μm aluminum layer on the top barrier layer. Still another possibility is to provide an extra barrier layer on the top-most aluminum layer, such that a top barrier layer of 60 nm is provided on a 0.6 μm aluminum layer, followed by another barrier layer of 60 nm, another aluminum layer of 0.6 μm and another barrier layer of 60 nm.
摘要翻译：一种衬垫结构和钝化方案，可在Cu / Low-K BEOL处理期间减少或消除后引线键合模具中的IMC裂纹。可以在1.2μm铝层和铜之间提供厚120nm的阻挡层。另一种可能性是有效地分离阻挡层，其中铝层设置在两个阻挡层之间。阻挡层可以是60nm，而设置在阻挡层之间的铝层可以是0.6μm。另一种可能性是在顶部阻挡层上提供额外的0.6μm的铝层。另一种可能性是在最顶层的铝层上提供额外的阻挡层，使得在0.6μm的铝层上提供60nm的顶部阻挡层，接着是60nm的另一阻挡层，另一个为0.6的铝层妈妈和60nm的另一阻挡层。

12. 发明申请

US20060105466A1 Sensor for determining concentration of ozone 审中-公开
标题翻译：用于测定臭氧浓度的传感器
公开(公告)号：US20060105466A1
公开(公告)日：2006-05-18
申请号：US10987072
申请日：2004-11-12
申请人： Michael Centanni , Peter Burke
发明人： Michael Centanni , Peter Burke
IPC分类号： A61L2/20 , G01N33/00
CPC分类号： A61L2/202 , G01N33/0039 , Y10T436/206664
摘要： The present invention discloses a sensor for detecting ozone, the sensor comprises an element exhibiting piezoelectric properties having a coating that is removed from the quartz crystal upon exposure to ozone.
摘要翻译：本发明公开了一种用于检测臭氧的传感器，该传感器包括具有压电特性的元件，其具有在暴露于臭氧时从石英晶体除去的涂层。

13. 发明申请

US20050208758A1 Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures 有权
标题翻译：用作半导体沟槽和通孔结构中的铜阻挡层的介电阻挡膜
公开(公告)号：US20050208758A1
公开(公告)日：2005-09-22
申请号：US11131003
申请日：2005-05-16
申请人： Hong-Qiang Lu , Peter Burke , Wilbur Catabay
发明人： Hong-Qiang Lu , Peter Burke , Wilbur Catabay
IPC分类号： H01L21/312 , H01L21/44 , H01L21/4763 , H01L21/768 , H01L23/532
CPC分类号： H01L21/02211 , H01L21/02126 , H01L21/02167 , H01L21/02315 , H01L21/02348 , H01L21/02351 , H01L21/3121 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76832 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on the underlying copper line. An opening is formed in the insulating layer to expose a portion of the copper line. The inner surface of the opening in the insulating layer has a dielectric barrier layer formed thereon to prevent the diffusion of copper into the insulating layer. A copper plug is formed to fill the opening and make electrical contact with the underlying copper interconnect structure. Aspects of the invention also include methods for forming the dielectric copper barrier layers and associate copper interconnects to the underlying copper lines.
摘要翻译：本发明涉及改进的介电铜阻挡层和相关互连结构。一种结构包括具有铜线的半导体衬底。在下面的铜线上形成由硅和碳中的至少一种形成的绝缘层。在绝缘层中形成开口以露出铜线的一部分。绝缘层中的开口的内表面具有形成在其上的电介质阻挡层，以防止铜扩散到绝缘层中。形成铜塞以填充开口并与下面的铜互连结构电接触。本发明的方面还包括用于形成电介质铜阻挡层和将铜互连连接到下面的铜线的方法。

14. 发明授权

US06939391B2 Direct smelting process and apparatus 有权
标题翻译：直接冶炼工艺和设备
公开(公告)号：US06939391B2
公开(公告)日：2005-09-06
申请号：US10220049
申请日：2001-03-02
申请人： Rodney J. Dry , Peter Burke
发明人： Rodney J. Dry , Peter Burke
IPC分类号： C21B11/08 , C21B11/00 , C21B13/00 , C21B13/10
CPC分类号： C21B13/0026 , C21B13/0013 , Y02P10/136
摘要： A molten bath-based direct smelting process for producing ferrous metal from a ferrous feed material is disclosed. The process is characterised by injecting pro-heated air downwardly into metallurgical vessel at an angle of 20 to 90° C. relative to a horizontal axis and at a temperature of 800-1400 ° C. and at a velocity of 200-600 m/s via at least one lance (27) . This step forces molten material in the region of a lower end of the lance away from the lance and forming a “free”space around the lower end of the lance that has a concentration of molten material that is lower than the molten material concentration in the raised bath. The process is further characterised in that the lance is located so that: (i) the lance extends into the vessel a distance that is at least the outer diameter of he lover end of the lance; and (ii) the lower end of the lance is at least 3 times the outer diameter of the lower end of the lance above a quiescent surface of the molt bath.
摘要翻译：公开了一种用于从含铁原料生产黑色金属的基于熔池的直接熔炼方法。该方法的特征在于，将预热的空气以相对于水平轴20度至90度的角度并且在800-1400℃的温度和200-600米/秒的速度向下注入冶金容器中，至少一个喷枪（27）。该步骤迫使喷枪下端区域中的熔融材料远离喷枪，并在喷枪下端周围形成“自由”空间，该空间的熔融材料浓度低于熔融材料的熔融材料浓度沐浴。该方法的特征还在于，所述喷枪的位置使得：（i）所述喷枪延伸到所述船舶中至少至少是所述喷枪的情人端的外径的距离; 和（ii）喷枪的下端至少是蜕皮浴静止表面上方的喷枪下端外径的3倍。

15. 发明申请

US20050186782A1 Dual damascene interconnect structure with improved electro migration lifetimes 有权
标题翻译：双镶嵌互连结构，具有改善的电迁移寿命
公开(公告)号：US20050186782A1
公开(公告)日：2005-08-25
申请号：US11090107
申请日：2005-03-24
申请人： Peter Burke , William Barth , Hongqiang Lu
发明人： Peter Burke , William Barth , Hongqiang Lu
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76808 , H01L21/76813 , H01L21/76838 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.
摘要翻译：通过图案化第一电介质以形成金属线来形成双镶嵌互连结构。第二电介质设置在第一电介质上并被图案化以形成通孔。第一金属线以相对于通孔接合的结构进行图案化，使得当将进入第二电介质的通孔蚀刻延伸到第一电介质中时形成空腔。在形成通孔的情况下，以一体的方式填充导电金属以形成通孔突起，以改善通孔和金属线之间的电接触。

16. 发明申请

US20050176216A1 Ultra low dielectric constant thin film 审中-公开
公开(公告)号：US20050176216A1
公开(公告)日：2005-08-11
申请号：US11106307
申请日：2005-04-14
申请人： Hao Cui , Peter Burke , Wilbur Catabay
发明人： Hao Cui , Peter Burke , Wilbur Catabay
IPC分类号： C23C16/32 , H01L21/00 , H01L21/314 , H01L21/46 , H01L21/768 , H01L29/15
CPC分类号： H01L21/02167 , C23C16/325 , H01L21/022 , H01L21/02274 , H01L21/3148 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76828
摘要： A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.

17. 发明授权

US08961759B2 Device and method for mitochondrial membrane potential assessment 有权
标题翻译：线粒体膜电位评估装置及方法
公开(公告)号：US08961759B2
公开(公告)日：2015-02-24
申请号：US13412515
申请日：2012-03-05
申请人： Peter Burke , Tae-Sun Lim , Antonio Davila , Douglas C. Wallace , Katayoun Zand
发明人： Peter Burke , Tae-Sun Lim , Antonio Davila , Douglas C. Wallace , Katayoun Zand
IPC分类号： G01N27/414 , G01N27/403 , G01N33/483
CPC分类号： G01N27/4035 , G01N33/4833 , Y10S435/82
摘要： A microfluidic sensor device includes a substrate having patterned thereon at least one Ag/AgCl electrode (working electrode) and an inner chamber overlying the at least one Ag/AgCl electrode. The device includes an ion selective permeable membrane permeable to TPP+ disposed on one side of the first chamber and a sensing chamber overlying the ion selective permeable membrane. A separate reference electrode is inserted into the sensing chamber. The working electrode and reference electrode are coupled to a voltmeter to measure voltage. This voltage can then be translated into a TPP+ concentration which is used to determine the mitochondrial membrane potential (ΔΨm).
摘要翻译：微流体传感器装置包括其上具有图案化的至少一个Ag / AgCl电极（工作电极）和覆盖至少一个Ag / AgCl电极的内室的基板。该装置包括设置在第一室的一侧上的可渗透TPP +的离子选择性渗透膜和覆盖离子选择性渗透膜的感测室。单独的参考电极插入感测室。工作电极和参考电极耦合到电压表以测量电压。然后可以将该电压转化为用于确定线粒体膜电位（＆Dgr;Ψm）的TPP +浓度。

18. 发明申请

US20080159270A1 INTEGRATED PHASE LOCK LOOP AND NETWORK PHY OR SWITCH 审中-公开
标题翻译：集成相位锁定环路和网络物理层或开关
公开(公告)号：US20080159270A1
公开(公告)日：2008-07-03
申请号：US11962390
申请日：2007-12-21
申请人： Peter Burke , Louise Gaulin , Silvana Goncala Rodrigues , Daniel Norman Gallant , Maamoun Abou Seido
发明人： Peter Burke , Louise Gaulin , Silvana Goncala Rodrigues , Daniel Norman Gallant , Maamoun Abou Seido
IPC分类号： H04L12/66
CPC分类号： H04J3/0697 , H04J3/0644 , H04J3/0688
摘要： A node in for connection to a synchronous packet network includes a packet switch and a physical interface for connection to the packet network. A phase locked loop arrangement for synchronization is integrated into the physical interface, the packet switch or both.
摘要翻译：用于连接到同步分组网络的节点包括分组交换机和用于连接到分组网络的物理接口。用于同步的锁相环装置被集成到物理接口，分组交换机或两者中。

19. 发明申请

US20070190784A1 DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES 失效
标题翻译：用于增加铜互连结构中电磁寿命的电介质障碍层
公开(公告)号：US20070190784A1
公开(公告)日：2007-08-16
申请号：US11736402
申请日：2007-04-17
申请人： Hao Cui , Peter Burke , Wilbur Catabay
发明人： Hao Cui , Peter Burke , Wilbur Catabay
IPC分类号： H01L21/44
CPC分类号： H01L21/76832 , H01L21/76825 , H01L21/76826 , H01L21/76834 , H01L21/76883
摘要： Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
摘要翻译：本发明的实施例包括具有增加的电迁移寿命的铜互连结构。这种结构可以包括其上形成有铜层的半导体衬底。在铜层上形成介电阻挡层叠体。电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分，第一部分具有相对于第二部分具有改进的铜的粘合性，并且两个部分形成为具有耐铜扩散性。本发明还包括用于构造这种结构的几个实施例。可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着，以增加堆叠中这种材料的浓度。

20. 发明申请

US20060169287A1 Condom with male genital desensitizer lubricant 审中-公开
公开(公告)号：US20060169287A1
公开(公告)日：2006-08-03
申请号：US11396649
申请日：2006-04-04
申请人： Michael Harrison , Dennis Blum , Gisela McBride , Stephen Coulter , Peter Burke
发明人： Michael Harrison , Dennis Blum , Gisela McBride , Stephen Coulter , Peter Burke
IPC分类号： A61F6/02 , A61F6/04
CPC分类号： A61F6/04 , A61F2006/048 , A61K9/0034 , Y10S128/918
摘要： A condom having a first lubricating composition containing a male genitalia desensitizing agent on the inside surface thereof and a second lubricating composition on the outside surface thereof. The first lubricating composition has a higher viscosity than the second lubricating composition so that the first lubricating composition remains on the inside surface of the condom during packaging, shipping, storage, and use.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式