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11. 发明授权

US07727780B2 Substrate processing method and semiconductor manufacturing apparatus 有权
标题翻译：基板加工方法和半导体制造装置
公开(公告)号：US07727780B2
公开(公告)日：2010-06-01
申请号：US12010274
申请日：2008-01-23
申请人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
发明人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/20 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.
摘要翻译：半导体制造装置和基板处理方法包括以下步骤：基于第一检测和第二检测部分获取测量值，并确定第一检测部分和第二检测部分之间的测量值的第一差异，与第一检测部分和第二检测部分相关的测量值之间的第二差异，当第一差异不同时，根据第一差异来计算设置在处理室和加热装置之间的冷却气体通道中的压力的校正值第二差异，并且基于压力校正值校正压力值，以及通过在加热处理室的同时使冷却气体流过冷却气体通道来处理基板的步骤，并且将加热装置和冷却装置放置在取决于压力的控制部分价值更正。

12. 发明申请

US20090035948A1 Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure 有权
标题翻译：基板处理装置，使用该加热装置的加热装置，利用这些装置制造半导体的方法和加热元件支撑结构
公开(公告)号：US20090035948A1
公开(公告)日：2009-02-05
申请号：US11990519
申请日：2006-08-23
申请人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
发明人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
IPC分类号： H01L21/31 , A21B1/00
CPC分类号： H01L21/67109
摘要： A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.
摘要翻译：一种基板处理装置，包括用于存储和处理基板的处理室和具有加热元件和隔热件的加热装置，并且通过加热元件加热处理室中的基板。加热元件形成为只有其一端由保持部保持，并且在加热元件的中间部分处突出到处理室侧并且位于加热元件附近或与加热元件接触的突起处形成在隔热材料。具有放大部分的销通过加热元件和加热元件的中间部分处的隔热件，并且扩大部分位于加热元件附近或与加热元件接触。多个突起可以形成在绝热体上，并且销可以设置在这些多个突起之间。

13. 发明申请

US20090014435A1 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和绝缘体
公开(公告)号：US20090014435A1
公开(公告)日：2009-01-15
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： H05B3/06 , H01L21/00 , H05B3/02
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.
摘要翻译：一种加热装置，包括加热元件，用于支撑加热元件的内壳，沿着内壳的外边界设置的外壳，用于在内壳和外壳之间输送冷却介质的冷却介质通道，第一设置在所述内壳中的开口，设置在所述外壳中的第二开口和布置成从所述第一开口延伸到所述第二开口的隔板，用于至少展开与所述冷却介质通道分离的空间以及在所述内壳和所述外壳之间的至少一个空间贝壳。加热装置还包括用于关闭设置在隔板和第二开口之间的间隙的绝缘体。

14. 发明申请

US20080153314A1 Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus 有权
标题翻译：基板处理装置，半导体装置的制造方法以及加热装置
公开(公告)号：US20080153314A1
公开(公告)日：2008-06-26
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

15. 发明授权

US5210058A Method for preparing organic silazane polymers and method for preparing ceramics from the polymers 失效
公开(公告)号：US5210058A
公开(公告)日：1993-05-11
申请号：US726578
申请日：1991-07-08
申请人： Yoshihumi Takeda , Akira Hayashida , Toshinobu Ishihara
发明人： Yoshihumi Takeda , Akira Hayashida , Toshinobu Ishihara
IPC分类号： C04B35/584 , C04B35/589 , C08G77/48 , C08G77/62
CPC分类号： C08G77/62 , C04B35/589
摘要： An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.

16. 发明授权

US5183875A Method for manufacturing a hafnium-containing silazane polymer and a method for manufacturing a ceramic from said polymer 失效
标题翻译：制备含铪硅烷聚合物的方法和从固体聚合物制造陶瓷的方法
公开(公告)号：US5183875A
公开(公告)日：1993-02-02
申请号：US630063
申请日：1990-12-19
申请人： Yoshihumi Takeda , Akira Hayashida
发明人： Yoshihumi Takeda , Akira Hayashida
IPC分类号： C04B35/571 , C04B35/589 , C08G77/48 , C08G77/60 , D01F9/10
CPC分类号： C04B35/589 , C08G77/60
摘要： A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I] wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.

17. 发明授权

US5041515A Methods for preparing polytitanocarbosilazane polymers and ceramics therefrom 失效
标题翻译：聚钛碳氮烷聚合物和陶瓷的制备方法
公开(公告)号：US5041515A
公开(公告)日：1991-08-20
申请号：US571132
申请日：1990-08-02
申请人： Yoshihumi Takeda , Minoru Takamizawa , Akira Hayashida
发明人： Yoshihumi Takeda , Minoru Takamizawa , Akira Hayashida
IPC分类号： C04B35/565 , C04B35/56 , C04B35/571 , C04B35/583 , C04B35/589 , C04B35/622 , C04B35/63 , C08G77/60 , C08G77/62 , C08G79/00
CPC分类号： C08G79/00 , C04B35/571 , C04B35/583 , C04B35/589 , C04B35/62227 , C04B35/6316 , C08G77/60 , C08G77/62
摘要： Polytitanocarbosilazane polymers useful as ceramic precursors are prepared by reacting organic silicon compounds of first and second types, a titanium compound, and a disilazane. Ceramic fibers are obtained by melt spinning the polymers followed by infusibilization and pyrolysis.

18. 发明授权

US4870035A Process for manufacturing organic silazane polymers and process for manufacturing ceramics from the polymers 失效
标题翻译：用于制造有机硅氮烷聚合物的方法和由聚合物制造陶瓷的方法
公开(公告)号：US4870035A
公开(公告)日：1989-09-26
申请号：US212438
申请日：1988-06-28
申请人： Minoru Takamizawa , Mitsuo Umemura , Masato Kanari , Yoshihumi Takeda , Akira Hayashida
发明人： Minoru Takamizawa , Mitsuo Umemura , Masato Kanari , Yoshihumi Takeda , Akira Hayashida
IPC分类号： C08G77/48 , C04B35/571 , C04B35/589 , C08G77/62
CPC分类号： C04B35/589 , C08G77/62
摘要： A process for manufacturing an organic silazane polymer which comprises reacting ammonia with a mixture of methyldichlorosilane, methyltrichlorosilane and dimethyldichlorosilane to obtain an ammonolysis product. The ammonolysis product is polymerized in the presence of a basic catalyst capable of deprotonation to obtain an organic silazane polymer. The silazane polymer may be further melted, shaped and infusibilized. The thus infusibilized product is finally sintered to obtain a ceramic material.
摘要翻译：一种制备有机硅氮烷聚合物的方法，其包括使氨与甲基二氯硅烷，甲基三氯硅烷和二甲基二氯硅烷的混合物反应以获得氨解产物。氨解产物在能够去质子化的碱性催化剂存在下聚合，得到有机硅氮烷聚合物。硅氮烷聚合物可以进一步熔融，成型和不熔化。将这样的不熔化产物最终烧结得到陶瓷材料。

19. 发明授权

US4604367A Method for the preparation of an inorganic fiber containing silicon, carbon, boron and nitrogen 失效
标题翻译：制备含有硅，碳，硼和氮的无机纤维的方法
公开(公告)号：US4604367A
公开(公告)日：1986-08-05
申请号：US682796
申请日：1984-12-18
申请人： Minoru Takamizawa , Taishi Kobayashi , Akira Hayashida , Yoshihumi Takeda
发明人： Minoru Takamizawa , Taishi Kobayashi , Akira Hayashida , Yoshihumi Takeda
IPC分类号： D01F9/10 , C04B35/571 , C08G79/00 , C08G79/08 , D01F9/08 , C04B35/02
CPC分类号： D01F9/08 , C04B35/571 , C08G79/08
摘要： The invention provides a novel inorganic fiber composed of the elements of silicon, carbon, boron and nitrogen of which the Si/B molar ratio is 2:1 to 200:1. The inorganic fiber is obtained by a method comprising the steps of: (a) preparing an organoborosilicon polymer by heating a mixture of an organopolysilane and an organoborazine compound, e.g. B-trimethyl-N-triphenyl borazine, to effect thermal decomposition and polycondensation reaction; (b) spinning the polymer into a fibrous form; (c) infusibilizing the fiber of the polymer by thermally oxidizing in an oxidizing atmosphere or by irradiating with ionizing radiations; and (d) calcining the infusibilized fiber at 900.degree. to 1800.degree. C. The inventive inorganic fiber is more stable at high temperatures than conventional silicon carbide fibers.
摘要翻译：本发明提供一种由硅，碳，硼和氮元素组成的新型无机纤维，Si / B摩尔比为2：1至200：1。无机纤维通过包括以下步骤的方法获得：（a）通过加热有机聚硅烷和有机硼嗪化合物的混合物制备有机硼硅聚合物，例如 B-三甲基-N-三苯基环硼氮烷进行热分解和缩聚反应; （b）将聚合物纺丝成纤维状; （c）通过在氧化气氛中热氧化或通过照射电离辐射来使聚合物的纤维熔融化; 和（d）在900〜1800℃煅烧不熔化纤维。本发明的无机纤维在高温下比常规碳化硅纤维更稳定。

20. 发明授权

US08734148B2 Heat treatment apparatus and method of manufacturing semiconductor device 有权
标题翻译：热处理装置及半导体装置的制造方法
公开(公告)号：US08734148B2
公开(公告)日：2014-05-27
申请号：US13033974
申请日：2011-02-24
申请人： Keishin Yamazaki , Akira Hayashida , Masaaki Ueno , Manabu Izumi , Katsuaki Nogami
发明人： Keishin Yamazaki , Akira Hayashida , Masaaki Ueno , Manabu Izumi , Katsuaki Nogami
IPC分类号： F27D1/00
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a surrounding member 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the surrounding member 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet hole 501 through which the exhaust device inhales an atmosphere outside the surrounding member 500 to the gap 506 is installed in the surrounding member 500.
摘要翻译：提供能够实现高精度加工和高安全性的热处理设备和制造基板的方法。热处理装置10包括用于处理基板的反应管42，用于支撑反应管42的歧管44，安装在反应管42周围以加热反应管42的内部的加热器46，安装围绕设置在比加热器46下部的反应管42的侧部; 用于强制地排出周围构件500与反应管42之间的间隙506的排气装置301; 以及安装在反应管42和歧管44之间的接触部分中的密封构件150.这里，排气装置将围绕构件500外部的气氛吸入间隙506的入口孔501安装在周围构件500中。

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