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1. 发明授权

US08734148B2 Heat treatment apparatus and method of manufacturing semiconductor device 有权
标题翻译：热处理装置及半导体装置的制造方法
公开(公告)号：US08734148B2
公开(公告)日：2014-05-27
申请号：US13033974
申请日：2011-02-24
申请人： Keishin Yamazaki , Akira Hayashida , Masaaki Ueno , Manabu Izumi , Katsuaki Nogami
发明人： Keishin Yamazaki , Akira Hayashida , Masaaki Ueno , Manabu Izumi , Katsuaki Nogami
IPC分类号： F27D1/00
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a surrounding member 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the surrounding member 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet hole 501 through which the exhaust device inhales an atmosphere outside the surrounding member 500 to the gap 506 is installed in the surrounding member 500.
摘要翻译：提供能够实现高精度加工和高安全性的热处理设备和制造基板的方法。热处理装置10包括用于处理基板的反应管42，用于支撑反应管42的歧管44，安装在反应管42周围以加热反应管42的内部的加热器46，安装围绕设置在比加热器46下部的反应管42的侧部; 用于强制地排出周围构件500与反应管42之间的间隙506的排气装置301; 以及安装在反应管42和歧管44之间的接触部分中的密封构件150.这里，排气装置将围绕构件500外部的气氛吸入间隙506的入口孔501安装在周围构件500中。

2. 发明申请

US20090016706A1 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20090016706A1
公开(公告)日：2009-01-15
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F26B3/28
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

3. 发明授权

US09184069B2 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
公开(公告)号：US09184069B2
公开(公告)日：2015-11-10
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01L21/66 , H01L21/673
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

4. 发明授权

US07727780B2 Substrate processing method and semiconductor manufacturing apparatus 有权
标题翻译：基板加工方法和半导体制造装置
公开(公告)号：US07727780B2
公开(公告)日：2010-06-01
申请号：US12010274
申请日：2008-01-23
申请人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
发明人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/20 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.
摘要翻译：半导体制造装置和基板处理方法包括以下步骤：基于第一检测和第二检测部分获取测量值，并确定第一检测部分和第二检测部分之间的测量值的第一差异，与第一检测部分和第二检测部分相关的测量值之间的第二差异，当第一差异不同时，根据第一差异来计算设置在处理室和加热装置之间的冷却气体通道中的压力的校正值第二差异，并且基于压力校正值校正压力值，以及通过在加热处理室的同时使冷却气体流过冷却气体通道来处理基板的步骤，并且将加热装置和冷却装置放置在取决于压力的控制部分价值更正。

5. 发明申请

US20090014435A1 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和绝缘体
公开(公告)号：US20090014435A1
公开(公告)日：2009-01-15
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： H05B3/06 , H01L21/00 , H05B3/02
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.
摘要翻译：一种加热装置，包括加热元件，用于支撑加热元件的内壳，沿着内壳的外边界设置的外壳，用于在内壳和外壳之间输送冷却介质的冷却介质通道，第一设置在所述内壳中的开口，设置在所述外壳中的第二开口和布置成从所述第一开口延伸到所述第二开口的隔板，用于至少展开与所述冷却介质通道分离的空间以及在所述内壳和所述外壳之间的至少一个空间贝壳。加热装置还包括用于关闭设置在隔板和第二开口之间的间隙的绝缘体。

6. 发明申请

US20080153314A1 Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus 有权
标题翻译：基板处理装置，半导体装置的制造方法以及加热装置
公开(公告)号：US20080153314A1
公开(公告)日：2008-06-26
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

7. 发明授权

US08158911B2 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和延伸部件
公开(公告)号：US08158911B2
公开(公告)日：2012-04-17
申请号：US12213825
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67109 , F27B17/0025 , H05B3/62
摘要： A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.
摘要翻译：一种加热装置，包括以片状形式设置的加热元件，并且具有设置在其中的凹口或通孔，由导电材料制成并被设置为围绕和限定加热空间的侧壁构件，以及设置在加热空间侧的保持构件侧壁构件用于在一端保持加热元件。另外，还设置有延伸部件，每个部件包括一个延伸部分，该延伸部分布置成从侧壁部件的加热空间侧突出，并且延伸穿过加热元件中的凹口或两端之间的通孔，以及突出部分所述加热元件的两个前后两侧沿着与所述延伸部分的延伸方向正交的方向从所述延伸部分延伸，从而抑制所述加热元件沿所述延伸方向的位移。

8. 发明申请

US20090029486A1 Substrate Processing Apparatus and Substrate Processing Method 有权
标题翻译：基板加工装置及基板加工方法
公开(公告)号：US20090029486A1
公开(公告)日：2009-01-29
申请号：US12087479
申请日：2007-02-21
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
摘要翻译：基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先根据由温度检测部分检测的温度确定温度。

9. 发明申请

US20090014428A1 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和延伸部件
公开(公告)号：US20090014428A1
公开(公告)日：2009-01-15
申请号：US12213825
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F27B5/14 , H05B3/00
CPC分类号： H01L21/67109 , F27B17/0025 , H05B3/62
摘要： A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.
摘要翻译：一种加热装置，包括以片状形式设置的加热元件，并且具有设置在其中的凹口或通孔，由导电材料制成并被设置为围绕和限定加热空间的侧壁构件，以及设置在加热空间侧的保持构件侧壁构件用于在一端保持加热元件。另外，还设置有延伸部件，每个部件包括一个延伸部分，该延伸部分布置成从侧壁部件的加热空间侧突出，并且延伸穿过加热元件中的凹口或两端之间的通孔，以及突出部分所述加热元件的两个前后两侧沿着与所述延伸部分的延伸方向正交的方向从所述延伸部分延伸，从而抑制所述加热元件沿所述延伸方向的位移。

10. 发明申请

US20080182345A1 Substrate processing method and semiconductor manufacturing apparatus 有权
标题翻译：基板加工方法和半导体制造装置
公开(公告)号：US20080182345A1
公开(公告)日：2008-07-31
申请号：US12010274
申请日：2008-01-23
申请人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
发明人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
IPC分类号： H01L21/66 , B05C11/02
CPC分类号： H01L22/20 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A semiconductor manufacturing apparatus and substrate processing method is provided with which the film formed on a substrate can be controlled in thickness and quality. The substrate processing method includes a step of acquiring a measurement value based on a first detecting section for detecting a state of a peripheral edge of a substrate and a measurement value based on a second detecting section for detecting a state of a center of the substrate and determining a first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, comparing between a previously stored second difference between a measurement value concerning the first detecting section and a measurement value concerning the second detecting section with the first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber for processing the substrate and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, anda step of processing the substrate by flowing a cooling gas through the cooling-gas passage by means of a cooling device while heating the process chamber by the heating device, and placing the heating device and the cooling device under control of a control section depending upon a pressure value corrected.
摘要翻译：提供了一种半导体制造装置和基板处理方法，其可以控制在基板上形成的膜的厚度和质量。基板处理方法包括基于用于检测基板的周缘的状态的第一检测部和基于用于检测基板的中心的状态的第二检测部的测量值来获取测量值的步骤，以及基于第二检测部分确定基于第一检测部分的测量值和测量值之间的第一差异，将先前存储的关于第一检测部分的测量值和与第二检测部分相关的测量值之间的第二差值进行比较基于第一检测部分的测量值和基于第二检测部分的测量值之间的第一差异，计算在处理基板的处理室和加热之间设置的冷却气体通道中的压力的校正值设备取决于fi的第一个差异第一差异与第二差异不同，并且基于压力校正值校正压力值，以及通过借助于冷却装置使冷却气体流过冷却气体通道而加热基板的步骤，同时加热处理室通过加热装置，并且根据校正的压力值将加热装置和冷却装置放置在控制部分的控制下。

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