专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07169690B2 Method of producing crystalline semiconductor material and method of fabricating semiconductor device 失效
标题翻译：制造结晶半导体材料的方法和制造半导体器件的方法
公开(公告)号：US07169690B2
公开(公告)日：2007-01-30
申请号：US11098846
申请日：2005-04-05
申请人： Dharam Pal Gosain , Akio Machida , Kazushi Nakano , Toshio Fujino , Junichi Sato
发明人： Dharam Pal Gosain , Akio Machida , Kazushi Nakano , Toshio Fujino , Junichi Sato
IPC分类号： H01L21/20
CPC分类号： C30B29/06 , C30B13/00 , C30B13/24 , C30B13/34 , C30B29/08 , H01L21/02529 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L27/1285 , H01L29/04
摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.
摘要翻译：公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

12. 发明申请

US20060027810A1 Method for doping semiconductor layer, method for manufacturing thin film semiconductor device, and thin film semiconductor device 审中-公开
标题翻译：掺杂半导体层的方法，薄膜半导体器件的制造方法以及薄膜半导体器件
公开(公告)号：US20060027810A1
公开(公告)日：2006-02-09
申请号：US11225326
申请日：2005-09-13
申请人： Akio Machida , Setsuo Usui , Dharam Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Gosain
IPC分类号： H01L29/76
CPC分类号： H01L29/78621 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/268 , H01L29/66757
摘要： A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.
摘要翻译：即使在使用低耐热性基板的情况下也形成了具有良好可控性的低浓度杂质扩散区域。当掺杂半导体层时，在衬底上形成半导体层之后，通过在等离子体照射时引入氢气并激活半导体中的吸附掺杂剂离子来控制吸收在半导体层表面上的掺杂剂离子的量层通过准分子激光器。

13. 发明申请

US20050092358A1 Optical energy conversion apparatus 审中-公开
标题翻译：光能转换装置
公开(公告)号：US20050092358A1
公开(公告)日：2005-05-05
申请号：US10999049
申请日：2004-11-29
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L31/00 , H01L31/0368
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

14. 发明授权

US07199303B2 Optical energy conversion apparatus 失效
标题翻译：光能转换装置
公开(公告)号：US07199303B2
公开(公告)日：2007-04-03
申请号：US10221719
申请日：2001-03-13
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01N6/00
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

15. 发明授权

US08357620B2 Laser annealing method and laser annealing apparatus 有权
标题翻译：激光退火方法和激光退火装置
公开(公告)号：US08357620B2
公开(公告)日：2013-01-22
申请号：US12574024
申请日：2009-10-06
申请人： Katsuji Takagi , Akio Machida , Toshio Fujino , Tadahiro Kono , Norio Fukasawa , Shinsuke Haga
发明人： Katsuji Takagi , Akio Machida , Toshio Fujino , Tadahiro Kono , Norio Fukasawa , Shinsuke Haga
IPC分类号： H01L21/00
CPC分类号： B23K26/03 , H01L22/26
摘要： An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.
摘要翻译：本发明的一个实施例提供了一种激光退火方法，包括以下步骤：扫描激光束为非晶膜时，在基板上的非晶膜上照射激光，使非晶膜结晶，检测从基板和激光束的扫描速度，同时对非晶膜进行激光束的辐射和扫描，并且基于光量的比较结果控制激光束的辐射水平和扫描速度从基板反射的激光束和激光束的扫描速度具有各自的预设参考。

16. 发明授权

US08089071B2 Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same 失效
标题翻译：具有循环穿过通道部分的晶粒边界的薄膜半导体器件及其制造方法
公开(公告)号：US08089071B2
公开(公告)日：2012-01-03
申请号：US11683272
申请日：2007-03-07
申请人： Akio Machida , Toshio Fujino , Tadahiro Kono
发明人： Akio Machida , Toshio Fujino , Tadahiro Kono
IPC分类号： H01L29/10
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.
摘要翻译：提供薄膜半导体器件。半导体器件包括通过照射能量束而使活性区域变为多晶区域的半导体薄膜，以及配置为穿过有源区域的栅电极。相继的晶粒边界在作为与栅电极重叠的有源区的沟道部分中沿着栅电极延伸，并且晶界穿过沟道部分并且沿沟道长度方向循环地设置。

17. 发明授权

US07541615B2 Display device including thin film transistors 失效
标题翻译：显示装置包括薄膜晶体管
公开(公告)号：US07541615B2
公开(公告)日：2009-06-02
申请号：US11753949
申请日：2007-05-25
申请人： Toshio Fujino , Akio Machida , Tadahiro Kono
发明人： Toshio Fujino , Akio Machida , Tadahiro Kono
IPC分类号： H01L29/10
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.
摘要翻译：提供包括驱动基板的显示器。排列在驱动基板上的是用于驱动像素电极的多个像素电极和薄膜晶体管。每个薄膜晶体管包括具有通过照射能量束而被制成多晶的有源区的半导体薄膜和设置成跨越有源区的栅电极。在与栅极重叠的有源区的沟道部分中，晶体状态沿着沟道长度方向周期性变化，并且基本相同的晶体状态与沟道部分交叉。

18. 发明申请

US20070212825A1 THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US20070212825A1
公开(公告)日：2007-09-13
申请号：US11685550
申请日：2007-03-13
申请人： Akio Machida , Toshio Fujino , Tadahiro Kono
发明人： Akio Machida , Toshio Fujino , Tadahiro Kono
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , H01L27/1296 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
摘要翻译：提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。半导体薄膜通过能量束的照射使有源区域变成多晶区域。栅电极被设置为横越有源区。在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

19. 发明授权

US06207082B1 Layer-structured oxide and process of producing the same 失效
标题翻译：层状氧化物及其制造方法
公开(公告)号：US06207082B1
公开(公告)日：2001-03-27
申请号：US08848613
申请日：1997-04-29
申请人： Masayuki Suzuki , Naomi Nagasawa , Akio Machida , Takaaki Ami
发明人： Masayuki Suzuki , Naomi Nagasawa , Akio Machida , Takaaki Ami
IPC分类号： H01B102
CPC分类号： H01L21/31691 , C01G29/006 , C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/88 , C01P2006/60 , C30B9/00 , C30B29/30
摘要： A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2−aMe1+bR2O9+c where a, b, and c are values in ranges of 0
摘要翻译：表现出顺电特性的层状氧化物和具有优选的剩余极化的层状氧化物及其制造方法。通过使用Bi 2 O 3作为主要成分的自身通过法，通过在约1400℃的高温下加热原料数十分钟来制造含有Bi，第一成分Me，第二成分R和O的层状氧化物。助焊剂第一组分Me由选自Sr，Pb，Ba和Ca中的至少一种组成，第二组分R由选自Nb和Ta中的至少一种组成。氧化物的组成式由Bi2-aMe1 + bR2O9 + c表示，其中a，b和c是0

20. 发明授权

US07435668B2 Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions 失效
标题翻译：掺杂杂质的方法，以及使用含有杂质离子的溶液制造半导体器件和应用电子设备的方法
公开(公告)号：US07435668B2
公开(公告)日：2008-10-14
申请号：US11039996
申请日：2005-01-24
申请人： Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
发明人： Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
IPC分类号： H01L21/225
CPC分类号： H01L29/66757 , H01L27/1292 , H01L29/78618
摘要： A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.
摘要翻译：将含有杂质离子的溶液施加到硅膜的表面上以形成溶液层，然后干燥成含有杂质的化合物层。通过用能量束的照射进行热处理，以使化合物层中的杂质原子朝向硅膜扩散到源区和漏区。随后，除去化合物层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式