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1. 发明申请

US20060027810A1 Method for doping semiconductor layer, method for manufacturing thin film semiconductor device, and thin film semiconductor device 审中-公开
标题翻译：掺杂半导体层的方法，薄膜半导体器件的制造方法以及薄膜半导体器件
公开(公告)号：US20060027810A1
公开(公告)日：2006-02-09
申请号：US11225326
申请日：2005-09-13
申请人： Akio Machida , Setsuo Usui , Dharam Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Gosain
IPC分类号： H01L29/76
CPC分类号： H01L29/78621 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/268 , H01L29/66757
摘要： A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.
摘要翻译：即使在使用低耐热性基板的情况下也形成了具有良好可控性的低浓度杂质扩散区域。当掺杂半导体层时，在衬底上形成半导体层之后，通过在等离子体照射时引入氢气并激活半导体中的吸附掺杂剂离子来控制吸收在半导体层表面上的掺杂剂离子的量层通过准分子激光器。

2. 发明授权

US06953754B2 Functional device and method of manufacturing the same 失效
标题翻译：功能器件及其制造方法
公开(公告)号：US06953754B2
公开(公告)日：2005-10-11
申请号：US10478888
申请日：2002-06-04
申请人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
IPC分类号： B32B7/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/786 , H01L31/04 , H01L21/31
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78675 , H01L29/78678
摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.
摘要翻译：本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致在功能层（14）中没有裂纹或分离。有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

3. 发明申请

US20050092358A1 Optical energy conversion apparatus 审中-公开
标题翻译：光能转换装置
公开(公告)号：US20050092358A1
公开(公告)日：2005-05-05
申请号：US10999049
申请日：2004-11-29
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L31/00 , H01L31/0368
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

4. 发明授权

US06794277B2 Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device 失效
标题翻译：掺杂半导体层的方法，薄膜半导体器件的制造方法以及薄膜半导体器件
公开(公告)号：US06794277B2
公开(公告)日：2004-09-21
申请号：US10204167
申请日：2002-10-23
申请人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
IPC分类号： H01L2126
CPC分类号： H01L29/66757 , H01L21/223 , H01L21/2236 , H01L21/268 , H01L29/78621 , Y10S438/914 , Y10S438/923
摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.
摘要翻译：即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

5. 发明授权

US06716664B2 Functional device and method of manufacturing the same 失效
标题翻译：功能器件及其制造方法
公开(公告)号：US06716664B2
公开(公告)日：2004-04-06
申请号：US10391811
申请日：2003-03-20
申请人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L5140
CPC分类号： H01L29/78603 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L27/1281 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.
摘要翻译：公开了一种没有破裂和功能特性优异的功能元件及其制造方法。在由诸如聚对苯二甲酸乙二醇酯的有机材料制成的基板（11）上依次形成低温软化层（12）和耐热层（13），并且由多晶硅制成的功能层（14）形成在其上。通过用激光束照射使作为前体层的非晶硅层结晶来形成功能层（14）。当施加激光束时，热量传递到基板（11），并且基板（11）趋于膨胀。然而，由基板（11）和功能层（14）之间的热膨胀系数的差异引起的应力被低温软化层（12）吸收，从而在功能层中不会发生裂纹和剥离（14）。低温软化层（12）优选由含有丙烯酸树脂的聚合材料制成。通过在基板（11）和功能层（14）之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

6. 发明授权

US06821797B2 Semiconductor device and its manufacturing method 失效
公开(公告)号：US06821797B2
公开(公告)日：2004-11-23
申请号：US10672202
申请日：2003-09-26
申请人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
IPC分类号： H01L2100
CPC分类号： H01L31/204 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L31/03921 , H01L31/056 , H01L31/202 , Y02E10/52 , Y02P70/521
摘要： For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.

7. 发明授权

US06661027B1 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06661027B1
公开(公告)日：2003-12-09
申请号：US09718269
申请日：2000-11-22
申请人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
IPC分类号： H01L2715
CPC分类号： H01L31/204 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L31/03921 , H01L31/056 , H01L31/202 , Y02E10/52 , Y02P70/521
摘要： For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.
摘要翻译：为了制造半导体器件，例如薄膜太阳能电池，其包括由有机高分子材料制成的基体，氧化物电极膜和半导体薄膜，每个氧化物电极膜和半导体薄膜在氧化物电极膜上含有至少一种IV族元素，与氧化物电极膜接触的半导体薄膜之一通过溅射在例如不含氢气的气氛的非还原气氛中进行堆叠。因此，确保在氧化物电极膜和该半导体薄膜之间的界面处不大体上含有3nm以上的粒状产物。因此，非晶半导体薄膜等半导体薄膜可以在其表面具有ITO膜等氧化物电极膜的塑料基板上具有增强的粘附性。

8. 发明授权

US06645837B2 Method of manufacturing semiconductor device 失效
公开(公告)号：US06645837B2
公开(公告)日：2003-11-11
申请号：US09871033
申请日：2001-05-31
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Akio Machida , Miyako Nakagoe , Setsuo Usui
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Akio Machida , Miyako Nakagoe , Setsuo Usui
IPC分类号： H01L21425
CPC分类号： H01L29/66757 , H01L27/12
摘要： A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.

9. 发明授权

US07199303B2 Optical energy conversion apparatus 失效
标题翻译：光能转换装置
公开(公告)号：US07199303B2
公开(公告)日：2007-04-03
申请号：US10221719
申请日：2001-03-13
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01N6/00
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

10. 发明授权

US06984552B2 Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element 失效
标题翻译：掺杂半导体层的方法，薄膜半导体元件和薄膜半导体元件的制造方法
公开(公告)号：US06984552B2
公开(公告)日：2006-01-10
申请号：US10433849
申请日：2001-12-07
申请人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78621 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/268 , H01L29/66757
摘要： A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.
摘要翻译：即使在使用低耐热性基板的情况下也形成了具有良好可控性的低浓度杂质扩散区域。当掺杂半导体层时，在衬底上形成半导体层之后，通过在等离子体照射时引入氢气并激活半导体中的吸附掺杂剂离子来控制吸收在半导体层表面上的掺杂剂离子的量层通过准分子激光器。

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