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    • 12. 发明专利
    • Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device
    • 图案形成方法,电泳敏感性或辐射敏感性树脂组合物,电阻膜,电子器件的制造方法和电子器件
    • JP2013152450A
    • 2013-08-08
    • JP2012279835
    • 2012-12-21
    • Fujifilm Corp富士フイルム株式会社
    • ITO JUNICHITAKAHASHI HIDETOMOYAMAGUCHI SHUHEIYAMAMOTO KEI
    • G03F7/038C08F20/28G03F7/039G03F7/32H01L21/027
    • G03F7/0388C08F220/18G03F7/0045G03F7/0046G03F7/038G03F7/0397G03F7/11G03F7/2041G03F7/325H01L21/0274
    • PROBLEM TO BE SOLVED: To provide a pattern forming method that has excellent uniformity and exposure latitude of a local pattern dimension in formation of a fine pattern such as a hole pattern with a pore diameter of 45 nm or smaller and suppresses the occurrence of a water residue defect, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device; in particular, a pattern forming method suitable for liquid immersion exposure, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: (a) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) that increases polarity by the action of acid and decreases solubility to a developing solution containing an organic solvent, a compound (B) that generates acid by irradiation with an actinic ray or radiation, a solvent (C), and a resin (D) that is different from the resin (A) and substantially does not contain fluorine atoms and silicon atoms; (b) a step of exposing the film; and (c) a step of developing the film by using a developing liquid containing an organic solvent to form a negative pattern. The content of the resin (D) relative to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition is 0.1 mass% or more and less than 10 mass%; and the mass content of a CHpartial structure of a side chain part in the resin (D) accounts for 12.0% or more of the resin (D).
    • 要解决的问题:提供一种图案形成方法,其在形成孔径为45nm以下的孔图案等精细图案时具有优异的局部图案尺寸的均匀性和曝光宽容度,并抑制水的发生 残留缺陷,用于其的光化射线敏感或辐射敏感性树脂组合物,抗蚀剂膜,电子器件的制造方法和电子器件; 特别是适用于液浸式的图案形成方法,用于其的光化射线敏感性或辐射敏感性树脂组合物,抗蚀剂膜,电子器件的制造方法和电子器件。解决方案: 成型方法包括:(a)通过含有树脂(A)的光化射线敏感或辐射敏感性树脂组合物形成膜的步骤,其通过酸的作用增加极性,并降低对含有有机溶剂的显影溶液的溶解性 ,通过用光化射线或辐射照射产生酸的化合物(B),不同于树脂(A)的溶剂(C)和树脂(D),并且基本上不含氟原子和硅原子; (b)曝光胶片的步骤; 和(c)通过使用含有有机溶剂的显影液形成阴图案来显影该膜的步骤。 树脂(D)相对于光化射线敏感性或辐射敏感性树脂组合物的总固体成分的含量为0.1质量%以上且小于10质量% 树脂(D)中侧链部分的CH部分结构的质量含量占树脂(D)的12.0%以上。
    • 13. 发明专利
    • Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method using composition, and method for manufacturing electronic device and electronic device
    • 丙烯酸类敏感性或辐射敏感性树脂组合物,耐腐蚀性膜和使用组合物的图案形成方法,以及制造电子器件和电子器件的方法
    • JP2013137338A
    • 2013-07-11
    • JP2011287025
    • 2011-12-27
    • Fujifilm Corp富士フイルム株式会社
    • FUKUHARA TOSHIAKIKATAOKA SHOHEITANGO NAOHIROSHIBUYA AKINORIITO JUNICHIMATSUDA TOMOKIIWATO KAORUSUGIYAMA SHINICHIYOSHITOME MASAHIROTOKUGAWA YOKO
    • G03F7/039C08F220/26G03F7/004H01L21/027
    • PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition, capable of forming a resist film that is excellent in a pattern cross-sectional shape and in suppressing occurrence of pattern collapse and defects attributed to residual water and is never deteriorated in performance of suppressing occurrence of the defects attributed to residual water and obtaining the excellent pattern cross-sectional shape even when the resist film is produced by using a resist solution left to stand for a certain time, to provide a resist film formed by using the composition, a pattern forming method using the composition, and to provide a method for manufacturing an electronic device and an electronic device.SOLUTION: There is provided an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin having a repeating unit expressed by general formula (1) and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group; (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) a resin having at least any of a fluorine atom and a silicon atom. In general formula (1), L represents a single bond or a divalent connecting group, and Z represents a cyclic acid anhydride group.
    • 要解决的问题:为了提供能够形成图案截面形状优异的抗蚀剂膜并抑制图案塌陷的发生和残留水分的缺陷的光化射线敏感性或辐射敏感性树脂组合物,并且为 即使当通过使用静置一定时间的抗蚀剂溶液制造抗蚀剂膜时,也不会降低由残留水引起的缺陷的发生的性能,并获得优异的图案横截面形状,以提供由 使用该组合物,使用该组合物的图案形成方法,并提供一种电子器件和电子器件的制造方法。解决方案:提供一种光化射线敏感或辐射敏感性树脂组合物,其包含:(A)树脂 具有由通式(1)表示的重复单元和通过酸的作用分解以产生碱的重复单元 流氓小组 (B)通过用光化射线或辐射照射产生酸的化合物; 和(C)至少具有氟原子和硅原子的任何一种的树脂。 在通式(1)中,L表示单键或二价连接基,Z表示环状酸酐基。